Overview
The STGW40V60DF is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. It is part of the V series IGBTs, which are designed to optimize the balance between conduction and switching losses, making them ideal for very high frequency converters. The device features an advanced proprietary trench gate field-stop structure, ensuring efficient operation and reliability.
This IGBT is available in the TO-247 package and is characterized by its high collector-emitter voltage (600 V), continuous collector current (40 A at TC = 100 °C), and low thermal resistance. The device also boasts a positive VCE(sat) temperature coefficient and tight parameter distribution, which enhance safe paralleling operations.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCES | Collector-emitter voltage (VGE = 0 V) | 600 | V |
| IC | Continuous collector current at TC = 100 °C | 40 | A |
| ICP | Pulsed collector current | 160 | A |
| VGE | Gate-emitter voltage | ±20 | V |
| PTOT | Total power dissipation at TC = 25 °C | 283 | W |
| Tstg | Storage temperature range | -55 to 150 | °C |
| TJ | Operating junction temperature range | -55 to 175 | °C |
| RthJC | Thermal resistance, junction-to-case (IGBT) | 0.53 | °C/W |
| RthJC | Thermal resistance, junction-to-case (diode) | 1.14 | °C/W |
| VCE(sat) | Collector-emitter saturation voltage | 1.8 (typ.) @ IC = 40 A | V |
| VGE(th) | Gate threshold voltage | 5 to 7 | V |
Key Features
- Advanced Trench Gate Field-Stop Structure: Enhances efficiency and reliability in high-frequency converters.
- Low Thermal Resistance: Ensures better heat dissipation and thermal management.
- Tight Parameter Distribution: Facilitates safe paralleling operations.
- Positive VCE(sat) Temperature Coefficient: Improves stability and safety during operation.
- Very Fast Soft Recovery Antiparallel Diode: Reduces switching losses and improves overall efficiency.
- High Junction Temperature (TJ = 175 °C): Allows for robust operation in demanding environments.
Applications
- Welding: Suitable for high-power welding applications due to its high current and voltage ratings.
- Power Factor Correction (PFC): Ideal for PFC circuits in power supplies and inverters.
- Uninterruptible Power Supplies (UPS): Used in UPS systems for reliable power backup.
- Solar Inverters: Applicable in solar power conversion systems for efficient energy transfer.
- Chargers: Utilized in high-power charging systems for various applications.
Q & A
- What is the maximum collector-emitter voltage of the STGW40V60DF IGBT?
The maximum collector-emitter voltage (VCES) is 600 V.
- What is the continuous collector current at TC = 100 °C?
The continuous collector current at TC = 100 °C is 40 A.
- What is the thermal resistance from junction to case for the IGBT?
The thermal resistance from junction to case (RthJC) for the IGBT is 0.53 °C/W.
- What is the typical collector-emitter saturation voltage (VCE(sat)) at IC = 40 A?
The typical collector-emitter saturation voltage (VCE(sat)) at IC = 40 A is 1.8 V.
- What are the key applications of the STGW40V60DF IGBT?
The key applications include welding, power factor correction, UPS, solar inverters, and chargers.
- What is the maximum operating junction temperature (TJ) of the STGW40V60DF?
The maximum operating junction temperature (TJ) is 175 °C.
- What is the gate threshold voltage (VGE(th)) range?
The gate threshold voltage (VGE(th)) range is from 5 to 7 V.
- What is the total gate charge (Qg) at VCC = 480 V and IC = 40 A?
The total gate charge (Qg) is approximately 226 nC.
- What is the reverse recovery energy (Err) at TJ = 175 °C?
The reverse recovery energy (Err) is approximately 718 µJ.
- What package types are available for the STGW40V60DF IGBT?
The STGW40V60DF IGBT is available in the TO-247 package.
