Overview
The STGFW40V60DF is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the V series IGBTs, which are designed to optimize the balance between conduction and switching losses, making them ideal for very high frequency converters. The STGFW40V60DF features an advanced proprietary trench gate field-stop structure, ensuring high efficiency and reliability in various applications.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCES | Collector-emitter voltage (VGE = 0 V) | 600 | V |
| IC | Continuous collector current at TC = 25 °C | 80 | A |
| IC | Continuous collector current at TC = 100 °C | 40 | A |
| ICP | Pulsed collector current | 160 | A |
| VGE | Gate-emitter voltage | ±20 | V |
| VCE(sat) | Collector-emitter saturation voltage at IC = 40 A, VGE = 15 V | 1.8 - 2.3 | V |
| RthJC | Thermal resistance, junction-to-case IGBT | 0.53 (TO-247), 1.52 (TO-3PF) | °C/W |
| TJ | Operating junction temperature range | -55 to 175 | °C |
Key Features
- Maximum Junction Temperature: TJ = 175 °C
- Tail-less Switching Off: Reduces switching losses
- Low VCE(sat): 1.8 V (typ.) at IC = 40 A
- Tight Parameters Distribution: Ensures safer paralleling operation
- Safe Paralleling: Due to positive VCE(sat) temperature coefficient
- Low Thermal Resistance: Enhances heat dissipation
- Very Fast Soft Recovery Antiparallel Diode: Improves switching performance
Applications
- Photovoltaic Inverters: For solar energy conversion
- Uninterruptible Power Supply (UPS): For reliable power backup
- Welding: High-power welding applications
- Power Factor Correction (PFC): For improving power efficiency
- Very High Frequency Converters: Optimized for high-frequency operations
Q & A
- What is the maximum collector-emitter voltage of the STGFW40V60DF?
The maximum collector-emitter voltage (VCES) is 600 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 80 A at 25 °C and 40 A at 100 °C.
- What is the typical collector-emitter saturation voltage (VCE(sat)) at IC = 40 A?
The typical VCE(sat) is 1.8 V at IC = 40 A and VGE = 15 V.
- What are the thermal resistance values for the TO-247 and TO-3PF packages?
The thermal resistance (RthJC) is 0.53 °C/W for TO-247 and 1.52 °C/W for TO-3PF.
- What is the operating junction temperature range of the STGFW40V60DF?
The operating junction temperature range is -55 to 175 °C.
- What are some of the key applications of the STGFW40V60DF?
Key applications include photovoltaic inverters, UPS, welding, power factor correction, and very high frequency converters.
- What is the significance of the tight parameters distribution in the STGFW40V60DF?
The tight parameters distribution ensures safer paralleling operation due to a positive VCE(sat) temperature coefficient.
- What is the maximum pulsed collector current of the STGFW40V60DF?
The maximum pulsed collector current (ICP) is 160 A.
- What is the gate-emitter voltage range for the STGFW40V60DF?
The gate-emitter voltage (VGE) range is ±20 V.
- What is the insulation withstand voltage of the STGFW40V60DF?
The insulation withstand voltage (VISO) is 3.5 kV (RMS) from all three leads to the external heat sink.
