NGTB40N120FL3WG
  • Share:

onsemi NGTB40N120FL3WG

Manufacturer No:
NGTB40N120FL3WG
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 1200V 160A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NGTB40N120FL3WG is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device features a robust and cost-effective Ultra Field Stop Trench construction, providing superior performance in demanding switching applications. It offers low on-state voltage and minimal switching loss, making it highly efficient. The IGBT is well-suited for applications such as UPS (Uninterruptible Power Supplies) and solar inverters. It also includes a soft and fast co-packaged free-wheeling diode with a low forward voltage, enhancing its overall performance.

Key Specifications

ParameterValue
Collector-Emitter Voltage (VCE)1200 V
Collector Current (IC)40 A
Power Dissipation (PD)227 W
Junction Temperature (TJmax)175°C
On-State Voltage (VCE(sat))1.7 V
Forward Voltage (VF)1.1 V
Switching Energy (Eon)1.6 mJ
Switching Energy (Eoff)1.1 mJ
Reverse Recovery Time (Trr)86 ns
Reverse Recovery Current (Irr)12 A
Gate Charge (Qg)212 nC
Short Circuit Withstand Time10 µs
Package TypeTO-247
Lead-Free StatusPb-Free

Key Features

  • Ultra Field Stop Trench construction for superior performance in demanding switching applications.
  • Low on-state voltage and minimal switching loss.
  • Soft and fast co-packaged free-wheeling diode with low forward voltage.
  • Optimized for high-speed switching.
  • Junction temperature up to 175°C.
  • Pb-Free devices.

Applications

  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Welding
  • Industrial applications

Q & A

  1. What is the collector-emitter voltage of the NGTB40N120FL3WG IGBT?
    The collector-emitter voltage is 1200 V.
  2. What is the maximum collector current of this IGBT?
    The maximum collector current is 40 A.
  3. What is the power dissipation of the NGTB40N120FL3WG?
    The power dissipation is 227 W.
  4. What is the maximum junction temperature for this device?
    The maximum junction temperature is 175°C.
  5. Does the NGTB40N120FL3WG include a free-wheeling diode?
    Yes, it includes a soft and fast co-packaged free-wheeling diode.
  6. What are the typical applications of the NGTB40N120FL3WG?
    Typical applications include solar inverters, UPS, welding, and industrial applications.
  7. Is the NGTB40N120FL3WG Pb-Free?
    Yes, this device is Pb-Free.
  8. What is the package type of the NGTB40N120FL3WG?
    The package type is TO-247.
  9. What is the forward voltage of the co-packaged diode?
    The forward voltage of the co-packaged diode is 1.1 V.
  10. Is the NGTB40N120FL3WG optimized for high-speed switching?
    Yes, it is optimized for high-speed switching.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):160 A
Current - Collector Pulsed (Icm):160 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 40A
Power - Max:454 W
Switching Energy:1.6mJ (on), 1.1mJ (off)
Input Type:Standard
Gate Charge:212 nC
Td (on/off) @ 25°C:18ns/145ns
Test Condition:600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr):136 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$7.49
16

Please send RFQ , we will respond immediately.

Similar Products

Part Number NGTB40N120FL3WG NGTB40N120FLWG NGTB40N120L3WG NGTB40N120FL2WG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V 1200 V 1200 V
Current - Collector (Ic) (Max) 160 A 80 A 160 A 80 A
Current - Collector Pulsed (Icm) 160 A 160 A 160 A 200 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A 2.2V @ 15V, 40A 2V @ 15V, 40A 2.4V @ 15V, 40A
Power - Max 454 W 260 W 454 W 535 W
Switching Energy 1.6mJ (on), 1.1mJ (off) 2.6mJ (on), 1.6mJ (off) 1.5mJ (on), 1.5mJ (off) 3.4mJ (on), 1.1mJ (off)
Input Type Standard Standard Standard Standard
Gate Charge 212 nC 415 nC 220 nC 313 nC
Td (on/off) @ 25°C 18ns/145ns 130ns/385ns 18ns/150ns 116ns/286ns
Test Condition 600V, 40A, 10Ohm, 15V 600V, 40A, 10Ohm, 15V 600V, 40A, 10Ohm, 15V 600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) 136 ns 200 ns 86 ns 240 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247

Related Product By Categories

FGL40N120ANDTU
FGL40N120ANDTU
onsemi
IGBT NPT 1200V 64A TO264-3
STGP10NC60KD
STGP10NC60KD
STMicroelectronics
IGBT 600V 20A 65W TO220
SGL160N60UFDTU
SGL160N60UFDTU
onsemi
IGBT 600V 160A 250W TO264
STGD7NC60HT4
STGD7NC60HT4
STMicroelectronics
IGBT 600V 25A 70W DPAK
HGT1S10N120BNST
HGT1S10N120BNST
onsemi
IGBT 1200V 35A 298W TO263AB
STGW30NC60WD
STGW30NC60WD
STMicroelectronics
IGBT 600V 60A 200W TO247
FGH75T65SHDT-F155
FGH75T65SHDT-F155
onsemi
IGBT 650V 150A 455W TO-247
STGW35HF60WDI
STGW35HF60WDI
STMicroelectronics
IGBT 600V 60A 200W TO-247
STGWA40H120DF2
STGWA40H120DF2
STMicroelectronics
TRENCH GATE IGBT TO247 PKG
ISL9V3040D3ST-F085C
ISL9V3040D3ST-F085C
onsemi
ECOSPARK1 IGN-IGBT TO252
FGAF20S65AQ
FGAF20S65AQ
onsemi
IGBT 650V 20A TO-3PF
STGWA60H65DFB
STGWA60H65DFB
STMicroelectronics
IGBT BIPO 650V 60A TO247-3

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD