Overview
The NGTB40N120FL3WG is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device features a robust and cost-effective Ultra Field Stop Trench construction, providing superior performance in demanding switching applications. It offers low on-state voltage and minimal switching loss, making it highly efficient. The IGBT is well-suited for applications such as UPS (Uninterruptible Power Supplies) and solar inverters. It also includes a soft and fast co-packaged free-wheeling diode with a low forward voltage, enhancing its overall performance.
Key Specifications
Parameter | Value |
---|---|
Collector-Emitter Voltage (VCE) | 1200 V |
Collector Current (IC) | 40 A |
Power Dissipation (PD) | 227 W |
Junction Temperature (TJmax) | 175°C |
On-State Voltage (VCE(sat)) | 1.7 V |
Forward Voltage (VF) | 1.1 V |
Switching Energy (Eon) | 1.6 mJ |
Switching Energy (Eoff) | 1.1 mJ |
Reverse Recovery Time (Trr) | 86 ns |
Reverse Recovery Current (Irr) | 12 A |
Gate Charge (Qg) | 212 nC |
Short Circuit Withstand Time | 10 µs |
Package Type | TO-247 |
Lead-Free Status | Pb-Free |
Key Features
- Ultra Field Stop Trench construction for superior performance in demanding switching applications.
- Low on-state voltage and minimal switching loss.
- Soft and fast co-packaged free-wheeling diode with low forward voltage.
- Optimized for high-speed switching.
- Junction temperature up to 175°C.
- Pb-Free devices.
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welding
- Industrial applications
Q & A
- What is the collector-emitter voltage of the NGTB40N120FL3WG IGBT?
The collector-emitter voltage is 1200 V. - What is the maximum collector current of this IGBT?
The maximum collector current is 40 A. - What is the power dissipation of the NGTB40N120FL3WG?
The power dissipation is 227 W. - What is the maximum junction temperature for this device?
The maximum junction temperature is 175°C. - Does the NGTB40N120FL3WG include a free-wheeling diode?
Yes, it includes a soft and fast co-packaged free-wheeling diode. - What are the typical applications of the NGTB40N120FL3WG?
Typical applications include solar inverters, UPS, welding, and industrial applications. - Is the NGTB40N120FL3WG Pb-Free?
Yes, this device is Pb-Free. - What is the package type of the NGTB40N120FL3WG?
The package type is TO-247. - What is the forward voltage of the co-packaged diode?
The forward voltage of the co-packaged diode is 1.1 V. - Is the NGTB40N120FL3WG optimized for high-speed switching?
Yes, it is optimized for high-speed switching.