Overview
The STGW20NC60VD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device is designed to offer excellent trade-offs between switching performance and low on-state behavior, thanks to the advanced Power MESH™ process. It is particularly suited for high-frequency applications and features a very soft ultra-fast recovery antiparallel diode. The IGBT is packaged in a TO-247 package, making it suitable for a variety of power management and motor drive applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCE) | 600 | V |
| Continuous Collector Current at Tc=25°C | 60 | A |
| Continuous Collector Current at Tc=100°C | 30 | A |
| Pulsed Collector Current | 150 | A |
| Gate-Emitter Voltage (VGE) | ±20 | V |
| Diode RMS Forward Current at Tc=25°C | 30 | A |
| Total Dissipation at TC = 25°C | 200 | W |
| Operating Junction Temperature (Tj) | -55 to 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) IGBT | 0.63 | °C/W |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.8 | V |
| Gate Threshold Voltage (VGE(th)) | 3.75 to 5.75 | V |
| Total Gate Charge (Qg) | 100 | nC |
| Turn-on Delay Time (td(on)) | 31 | ns |
| Turn-off Delay Time (td(off)) | 28 | ns |
Key Features
- High current capability up to 60 A at Tc=25°C and 30 A at Tc=100°C.
- High frequency operation up to 50 KHz.
- Very soft ultra-fast recovery antiparallel diode.
- Low on-state voltage (VCE(sat)) of 1.8 V.
- High gate threshold voltage (VGE(th)) range of 3.75 to 5.75 V.
- Low total gate charge (Qg) of 100 nC.
- Fast switching times with turn-on delay time (td(on)) of 31 ns and turn-off delay time (td(off)) of 28 ns.
Applications
- High frequency inverters.
- Uninterruptible Power Supplies (UPS).
- Motor drives.
- Switch Mode Power Supplies (SMPS) and Power Factor Correction (PFC) in both hard switch and resonant topologies.
Q & A
- What is the maximum collector-emitter voltage of the STGW20NC60VD IGBT?
The maximum collector-emitter voltage (VCE) is 600 V.
- What is the continuous collector current at 25°C and 100°C?
The continuous collector current is 60 A at Tc=25°C and 30 A at Tc=100°C.
- What is the maximum gate-emitter voltage?
The maximum gate-emitter voltage (VGE) is ±20 V.
- What is the total dissipation at TC = 25°C?
The total dissipation at TC = 25°C is 200 W.
- What is the operating junction temperature range?
The operating junction temperature (Tj) range is -55 to 150 °C.
- What is the thermal resistance junction-case for the IGBT?
The thermal resistance junction-case (Rthj-case) for the IGBT is 0.63 °C/W.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time (td(on)) is 31 ns, and the typical turn-off delay time (td(off)) is 28 ns.
- What are the common applications of the STGW20NC60VD IGBT?
Common applications include high frequency inverters, UPS, motor drives, and SMPS and PFC in both hard switch and resonant topologies.
- What is the package type of the STGW20NC60VD IGBT?
The package type is TO-247.
- Does the STGW20NC60VD IGBT have an antiparallel diode?
Yes, it features a very soft ultra-fast recovery antiparallel diode.
