STGD3HF60HDT4
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STMicroelectronics STGD3HF60HDT4

Manufacturer No:
STGD3HF60HDT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IGBT 600V 7.5A 38W DPAK
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Introduction

Overview

The STGD3HF60HDT4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. This component is designed for surface mount device (SMD) mounting and is part of a new advanced planar technology concept. It offers enhanced switching performance and lower conduction losses, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
Current Rating (Ic)4.5 A
Voltage Rating (Vce)600 V
Reverse Recovery Time (trr)Ultrafast diode
Switching PerformanceStable switching performance (E off) versus temperature
Mounting TypeSMD

Key Features

  • Advanced planar technology for stable switching performance and lower conduction losses.
  • Ultrafast diode for improved recovery characteristics.
  • High current rating of 4.5 A and high voltage rating of 600 V.
  • Suitable for high-power applications due to its robust design and performance.

Applications

The STGD3HF60HDT4 is designed for use in various high-power applications, including but not limited to:

  • Power supplies and converters.
  • Motor drives and control systems.
  • Industrial power systems.
  • Railway and automotive systems.

Q & A

  1. What is the current rating of the STGD3HF60HDT4? The current rating is 4.5 A.
  2. What is the voltage rating of the STGD3HF60HDT4? The voltage rating is 600 V.
  3. What type of diode does the STGD3HF60HDT4 have? It has an ultrafast diode.
  4. What is the mounting type of the STGD3HF60HDT4? It is designed for SMD mounting.
  5. What technology is used in the STGD3HF60HDT4? It uses an advanced planar technology concept.
  6. What are the benefits of the advanced planar technology in the STGD3HF60HDT4? It provides stable switching performance and lower conduction losses.
  7. In what types of applications is the STGD3HF60HDT4 typically used? It is used in high-power applications such as power supplies, motor drives, industrial power systems, and railway/automotive systems.
  8. Where can I find detailed specifications for the STGD3HF60HDT4? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors.
  9. What is the significance of the ultrafast diode in the STGD3HF60HDT4? The ultrafast diode improves the recovery characteristics of the IGBT.
  10. Is the STGD3HF60HDT4 suitable for high-temperature applications? Yes, it offers stable switching performance versus temperature.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):7.5 A
Current - Collector Pulsed (Icm):18 A
Vce(on) (Max) @ Vge, Ic:2.95V @ 15V, 1.5A
Power - Max:38 W
Switching Energy:19µJ (on), 12µJ (off)
Input Type:Standard
Gate Charge:12 nC
Td (on/off) @ 25°C:11ns/60ns
Test Condition:400V, 1.5A, 100Ohm, 15V
Reverse Recovery Time (trr):85 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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