Overview
The FGH60N60SMD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by ON Semiconductor. This device utilizes novel field stop IGBT technology, offering optimal performance for various applications that require low conduction and switching losses. It is particularly suited for solar inverters, UPS systems, welders, power factor correction (PFC), telecommunications, and energy storage systems (ESS).
Key Specifications
| Parameter | Description | Unit | Value |
|---|---|---|---|
| Collector to Emitter Voltage (VCES) | Maximum collector to emitter voltage | V | 600 |
| Gate to Emitter Voltage (VGES) | Maximum gate to emitter voltage | V | ±20 |
| Transient Gate to Emitter Voltage | Transient gate to emitter voltage | V | ±30 |
| Collector Current (IC) | Maximum collector current at TC = 25°C | A | 120 |
| Collector Current (IC) at TC = 100°C | Maximum collector current at TC = 100°C | A | 60 |
| Pulsed Collector Current (ICM) | Pulsed collector current | A | 180 |
| Maximum Power Dissipation (PD) at TC = 25°C | Maximum power dissipation at TC = 25°C | W | 600 |
| Operating Junction Temperature (TJ) | Operating junction temperature range | °C | -55 to +175 |
| Collector-Emitter Saturation Voltage (VCE(sat)) | Collector-emitter saturation voltage at IC = 60 A, VGE = 15 V | V | 1.9 (Typ.) |
| Total Gate Charge (Qg) | Total gate charge at VCE = 400 V, IC = 60 A, VGE = 15 V | nC | 189 (Typ.) |
Key Features
- High Current Capability: The device can handle up to 120 A of collector current at 25°C and 60 A at 100°C.
- Low Saturation Voltage: A typical collector-emitter saturation voltage of 1.9 V at IC = 60 A and VGE = 15 V, reducing conduction losses.
- High Input Impedance: Ensures stable operation and ease of control.
- Fast Switching: Low turn-off switching loss and fast switching times enhance overall efficiency.
- Positive Temperature Coefficient: Facilitates easy parallel operation of multiple devices.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
- Solar Inverters: Ideal for solar power conversion systems due to low conduction and switching losses.
- UPS Systems: Suitable for uninterruptible power supplies requiring high reliability and efficiency.
- Welders: Used in welding equipment for high current handling and fast switching capabilities.
- Power Factor Correction (PFC): Enhances power factor in various power supply systems.
- Telecommunications: Applicable in telecom systems where high current and low losses are critical.[
- Energy Storage Systems (ESS): Suitable for energy storage applications requiring efficient power management.[
Q & A
- What is the maximum collector to emitter voltage of the FGH60N60SMD IGBT?
The maximum collector to emitter voltage is 600 V.
- What is the maximum collector current at 25°C for the FGH60N60SMD?
The maximum collector current at 25°C is 120 A.
- What is the typical collector-emitter saturation voltage of the FGH60N60SMD?
The typical collector-emitter saturation voltage is 1.9 V at IC = 60 A and VGE = 15 V.
- What is the maximum junction temperature of the FGH60N60SMD?
The maximum junction temperature is 175°C.
- Is the FGH60N60SMD Pb-Free and RoHS compliant?
Yes, the device is Pb-Free and RoHS compliant.[
- What are the typical applications of the FGH60N60SMD IGBT?
Typical applications include solar inverters, UPS systems, welders, PFC, telecommunications, and ESS.[
- What is the package type of the FGH60N60SMD IGBT?
The package type is TO-247.[
- What is the total gate charge of the FGH60N60SMD at VCE = 400 V, IC = 60 A, and VGE = 15 V?
The total gate charge is typically 189 nC.[
- Does the FGH60N60SMD have a positive temperature coefficient?
Yes, it has a positive temperature coefficient, which facilitates easy parallel operation.[
- What is the maximum power dissipation of the FGH60N60SMD at 25°C?
The maximum power dissipation at 25°C is 600 W.[
