Overview
The STGP14NC60KD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device is part of the STGB14NC60KDT4, STGF14NC60KD, and STGP14NC60KD family, which are designed using advanced PowerMESH™ technology. This technology ensures an excellent trade-off between switching performance and low on-state behavior, making the STGP14NC60KD suitable for a variety of high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCE) | 600 | V |
| Continuous Collector Current at TC = 25 °C | 14 | A |
| Continuous Collector Current at TC = 100 °C | 7 | A |
| Pulsed Collector Current | 50 | A |
| Gate-Emitter Voltage | ±20 | V |
| Total Dissipation at TC = 25 °C | 80 | W |
| Short-Circuit Withstand Time | 10 μs | - |
| Operating Junction Temperature Range | -55 to 150 | °C |
| Thermal Resistance Junction-Case (IGBT) | 1.56 | °C/W |
| Thermal Resistance Junction-Ambient | 62.5 | °C/W |
| Collector-Emitter Saturation Voltage (VCEsat) | 2.1 | V |
| Gate Charge (Qg) | 34.4 | nC |
Key Features
- Low on-state voltage drop (VCE(sat))
- Low Cres / Cies ratio, reducing cross-conduction susceptibility
- Very soft ultrafast recovery antiparallel diode
- Short-circuit withstand time of 10 μs
- Integrated anti-parallel diode
- High switching speed and low losses
Applications
- High frequency inverters
- Switch Mode Power Supplies (SMPS) and Power Factor Correction (PFC) in both hard switch and resonant topologies
- Motor drives
Q & A
- What is the maximum collector-emitter voltage of the STGP14NC60KD?
The maximum collector-emitter voltage is 600 V. - What is the continuous collector current at 25 °C?
The continuous collector current at 25 °C is 14 A. - What is the short-circuit withstand time of the STGP14NC60KD?
The short-circuit withstand time is 10 μs. - What is the maximum gate-emitter voltage?
The maximum gate-emitter voltage is ±20 V. - What is the total dissipation at 25 °C?
The total dissipation at 25 °C is 80 W. - What is the thermal resistance junction-case for the IGBT?
The thermal resistance junction-case for the IGBT is 1.56 °C/W. - Does the STGP14NC60KD have an integrated anti-parallel diode?
Yes, it has an integrated anti-parallel diode. - What are the typical applications of the STGP14NC60KD?
Typical applications include high frequency inverters, SMPS and PFC, and motor drives. - What is the operating junction temperature range?
The operating junction temperature range is -55 to 150 °C. - What is the collector-emitter saturation voltage (VCEsat) at 25 °C?
The collector-emitter saturation voltage (VCEsat) at 25 °C is typically 2.1 V.
