AFGY100T65SPD
  • Share:

onsemi AFGY100T65SPD

Manufacturer No:
AFGY100T65SPD
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT - 650 V 100 A FS3 FOR EV TR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AFGY100T65SPD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This component is designed to offer very low conduction and switch losses, making it ideal for high-efficiency operations in various applications. It is AEC-Q101 qualified, ensuring its reliability and suitability for automotive and other demanding environments.

Key Specifications

Parameter Value Unit
Collector Current (IC) 100 A
Voltage Rating (VCE) 650 V
Saturation Voltage (VCE(Sat)) 1.6 V (Typ. @ IC = 100 A)
Maximum Junction Temperature (TJ) 175 °C
Package Type TO-247
Pins 3

Key Features

  • Very low saturation voltage (VCE(Sat) = 1.6 V Typ. @ IC = 100 A) for reduced conduction losses.
  • High efficiency operation due to low conduction and switch losses.
  • AEC-Q101 qualified, ensuring reliability in automotive and other demanding applications.
  • Field Stop Trench technology for improved performance.
  • Soft Fast Recovery Diode integrated for enhanced switching characteristics.

Applications

  • Automotive systems, including electric vehicles and hybrid electric vehicles.
  • Industrial power supplies and motor drives.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power switching applications requiring high efficiency and reliability.

Q & A

  1. What is the collector current rating of the AFGY100T65SPD IGBT?

    The collector current rating is 100 A.

  2. What is the voltage rating of the AFGY100T65SPD IGBT?

    The voltage rating is 650 V.

  3. What is the typical saturation voltage of the AFGY100T65SPD IGBT?

    The typical saturation voltage is 1.6 V at IC = 100 A.

  4. What is the maximum junction temperature of the AFGY100T65SPD IGBT?

    The maximum junction temperature is 175°C.

  5. What package type is the AFGY100T65SPD IGBT available in?

    The AFGY100T65SPD IGBT is available in a TO-247 package.

  6. Is the AFGY100T65SPD IGBT AEC-Q101 qualified?

    Yes, the AFGY100T65SPD IGBT is AEC-Q101 qualified.

  7. What technology is used in the AFGY100T65SPD IGBT?

    The AFGY100T65SPD IGBT uses Field Stop Trench technology.

  8. Does the AFGY100T65SPD IGBT have an integrated diode?

    Yes, it has a Soft Fast Recovery Diode integrated.

  9. In what types of applications is the AFGY100T65SPD IGBT commonly used?

    It is commonly used in automotive systems, industrial power supplies, renewable energy systems, and high-power switching applications.

  10. Why is the AFGY100T65SPD IGBT suitable for high-efficiency operations?

    It is suitable due to its very low conduction and switch losses, which contribute to high efficiency operation.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):120 A
Current - Collector Pulsed (Icm):300 A
Vce(on) (Max) @ Vge, Ic:2.05V @ 15V, 100A
Power - Max:660 W
Switching Energy:5.1mJ (on), 2.7mJ (off)
Input Type:Standard
Gate Charge:109 nC
Td (on/off) @ 25°C:36ns/78ns
Test Condition:400V, 100A, 5Ohm, 15V
Reverse Recovery Time (trr):105 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$10.29
80

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number AFGY100T65SPD AFGY120T65SPD
Manufacturer onsemi onsemi
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 120 A 160 A
Current - Collector Pulsed (Icm) 300 A 360 A
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 100A 2.05V @ 15V, 120A
Power - Max 660 W 714 W
Switching Energy 5.1mJ (on), 2.7mJ (off) 6.6mJ (on), 3.8mJ (off)
Input Type Standard Standard
Gate Charge 109 nC 125 nC
Td (on/off) @ 25°C 36ns/78ns 40ns/80ns
Test Condition 400V, 100A, 5Ohm, 15V 400V, 120A, 5Ohm, 15V
Reverse Recovery Time (trr) 105 ns 107 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3

Related Product By Categories

FGA20N120FTDTU
FGA20N120FTDTU
onsemi
IGBT 1200V 40A 298W TO3PN
STGB19NC60HDT4
STGB19NC60HDT4
STMicroelectronics
IGBT 600V 40A 130W D2PAK
STGB7NC60HDT4
STGB7NC60HDT4
STMicroelectronics
IGBT 600V 25A 80W D2PAK
STGW15H120DF2
STGW15H120DF2
STMicroelectronics
IGBT H-SERIES 1200V 15A TO-247
AFGHL75T65SQD
AFGHL75T65SQD
onsemi
650V75A FS4 IGBT TO-247LL
STGWA75M65DF2
STGWA75M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
NGTB50N65FL2WG
NGTB50N65FL2WG
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
STGWA15H120DF2
STGWA15H120DF2
STMicroelectronics
IGBT HB 1200V 15A HS TO247-3
FGH40N60SFDTU-F085
FGH40N60SFDTU-F085
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
IKW75N60TXK
IKW75N60TXK
Infineon Technologies
IKW75N60 - DISCRETE IGBT WITH AN
NGTB45N60S1WG
NGTB45N60S1WG
onsemi
IGBT 45A 600V TO-247
FGH40T65SQD-F155
FGH40T65SQD-F155
onsemi
IGBT TRENCH/FS 650V 80A TO247-3

Related Product By Brand

MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD