AFGY100T65SPD
  • Share:

onsemi AFGY100T65SPD

Manufacturer No:
AFGY100T65SPD
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT - 650 V 100 A FS3 FOR EV TR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AFGY100T65SPD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This component is designed to offer very low conduction and switch losses, making it ideal for high-efficiency operations in various applications. It is AEC-Q101 qualified, ensuring its reliability and suitability for automotive and other demanding environments.

Key Specifications

Parameter Value Unit
Collector Current (IC) 100 A
Voltage Rating (VCE) 650 V
Saturation Voltage (VCE(Sat)) 1.6 V (Typ. @ IC = 100 A)
Maximum Junction Temperature (TJ) 175 °C
Package Type TO-247
Pins 3

Key Features

  • Very low saturation voltage (VCE(Sat) = 1.6 V Typ. @ IC = 100 A) for reduced conduction losses.
  • High efficiency operation due to low conduction and switch losses.
  • AEC-Q101 qualified, ensuring reliability in automotive and other demanding applications.
  • Field Stop Trench technology for improved performance.
  • Soft Fast Recovery Diode integrated for enhanced switching characteristics.

Applications

  • Automotive systems, including electric vehicles and hybrid electric vehicles.
  • Industrial power supplies and motor drives.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power switching applications requiring high efficiency and reliability.

Q & A

  1. What is the collector current rating of the AFGY100T65SPD IGBT?

    The collector current rating is 100 A.

  2. What is the voltage rating of the AFGY100T65SPD IGBT?

    The voltage rating is 650 V.

  3. What is the typical saturation voltage of the AFGY100T65SPD IGBT?

    The typical saturation voltage is 1.6 V at IC = 100 A.

  4. What is the maximum junction temperature of the AFGY100T65SPD IGBT?

    The maximum junction temperature is 175°C.

  5. What package type is the AFGY100T65SPD IGBT available in?

    The AFGY100T65SPD IGBT is available in a TO-247 package.

  6. Is the AFGY100T65SPD IGBT AEC-Q101 qualified?

    Yes, the AFGY100T65SPD IGBT is AEC-Q101 qualified.

  7. What technology is used in the AFGY100T65SPD IGBT?

    The AFGY100T65SPD IGBT uses Field Stop Trench technology.

  8. Does the AFGY100T65SPD IGBT have an integrated diode?

    Yes, it has a Soft Fast Recovery Diode integrated.

  9. In what types of applications is the AFGY100T65SPD IGBT commonly used?

    It is commonly used in automotive systems, industrial power supplies, renewable energy systems, and high-power switching applications.

  10. Why is the AFGY100T65SPD IGBT suitable for high-efficiency operations?

    It is suitable due to its very low conduction and switch losses, which contribute to high efficiency operation.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):120 A
Current - Collector Pulsed (Icm):300 A
Vce(on) (Max) @ Vge, Ic:2.05V @ 15V, 100A
Power - Max:660 W
Switching Energy:5.1mJ (on), 2.7mJ (off)
Input Type:Standard
Gate Charge:109 nC
Td (on/off) @ 25°C:36ns/78ns
Test Condition:400V, 100A, 5Ohm, 15V
Reverse Recovery Time (trr):105 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$10.29
80

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number AFGY100T65SPD AFGY120T65SPD
Manufacturer onsemi onsemi
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 120 A 160 A
Current - Collector Pulsed (Icm) 300 A 360 A
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 100A 2.05V @ 15V, 120A
Power - Max 660 W 714 W
Switching Energy 5.1mJ (on), 2.7mJ (off) 6.6mJ (on), 3.8mJ (off)
Input Type Standard Standard
Gate Charge 109 nC 125 nC
Td (on/off) @ 25°C 36ns/78ns 40ns/80ns
Test Condition 400V, 100A, 5Ohm, 15V 400V, 120A, 5Ohm, 15V
Reverse Recovery Time (trr) 105 ns 107 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3

Related Product By Categories

FGH40N60SMD
FGH40N60SMD
onsemi
IGBT FIELD STOP 600V 80A TO247-3
FGH60N60SMD-F085
FGH60N60SMD-F085
onsemi
IGBT 600V 120A 600W TO247
STGD7NC60HT4
STGD7NC60HT4
STMicroelectronics
IGBT 600V 25A 70W DPAK
STGP40V60F
STGP40V60F
STMicroelectronics
IGBT 600V 80A 283W TO220AB
FGA50T65SHD
FGA50T65SHD
onsemi
IGBT TRENCH/FS 650V 100A TO3PN
STGW30NC60WD
STGW30NC60WD
STMicroelectronics
IGBT 600V 60A 200W TO247
FGH40N60SMD-F085
FGH40N60SMD-F085
onsemi
IGBT 600V 80A 349W TO-247-3
STGWA40M120DF3
STGWA40M120DF3
STMicroelectronics
IGBT 1200V 80A 468W TO-247-3
STGW80H65DFB
STGW80H65DFB
STMicroelectronics
IGBT 650V 120A 469W TO-247
STGW25M120DF3
STGW25M120DF3
STMicroelectronics
IGBT 1200V 50A 375W
FGL60N100BNTDTU
FGL60N100BNTDTU
onsemi
IGBT 1000V 60A 180W TO264
STGW45HF60WD
STGW45HF60WD
STMicroelectronics
IGBT 600V 70A 250W TO247

Related Product By Brand

SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC