Overview
The STGB30H60DFB is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. It is part of the HB series, which is designed to optimize the balance between conduction and switching losses, thereby maximizing the efficiency of frequency converters. This IGBT features an advanced proprietary trench gate field-stop structure, ensuring high-speed switching capabilities and minimized tail current. The device is suitable for various high-power applications, including photovoltaic inverters and high-frequency converters.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCES) | 600 | V |
| Continuous collector current at TC = 25 °C | 60 | A |
| Continuous collector current at TC = 100 °C | 30 | A |
| Pulsed collector current (ICP) | 120 | A |
| Gate-emitter voltage (VGE) | ±20 | V |
| Transient gate-emitter voltage | ±30 | V |
| Total power dissipation at TC = 25 °C (PTOT) | 260 | W |
| Storage temperature range (TSTG) | -55 to 150 | °C |
| Operating junction temperature range (TJ) | -55 to 175 | °C |
| Thermal resistance junction-case IGBT (RthJC) | 0.58 | °C/W |
| Thermal resistance junction-case diode (RthJC) | 2.08 | °C/W |
| Thermal resistance junction-ambient (RthJA) | 62.5 | °C/W |
| Collector-emitter saturation voltage (VCE(sat)) at IC = 30 A, VGE = 15 V | 1.55 | V |
| Gate threshold voltage (VGE(th)) | 5 to 7 | V |
Key Features
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- High frequency converters
Q & A
- What is the maximum collector-emitter voltage of the STGB30H60DFB? The maximum collector-emitter voltage (VCES) is 600 V.
- What is the continuous collector current at 25 °C and 100 °C? The continuous collector current is 60 A at 25 °C and 30 A at 100 °C.
- What is the typical collector-emitter saturation voltage (VCE(sat)) at IC = 30 A? The typical VCE(sat) is 1.55 V at IC = 30 A and VGE = 15 V.
- What are the thermal resistance values for junction-case and junction-ambient? The thermal resistance junction-case IGBT (RthJC) is 0.58 °C/W, and the thermal resistance junction-ambient (RthJA) is 62.5 °C/W.
- What is the gate threshold voltage range? The gate threshold voltage (VGE(th)) ranges from 5 to 7 V.
- What are the typical applications of the STGB30H60DFB? Typical applications include photovoltaic inverters and high-frequency converters.
- What is the maximum operating junction temperature? The maximum operating junction temperature (TJ) is 175 °C.
- What is the total power dissipation at 25 °C? The total power dissipation (PTOT) at 25 °C is 260 W.
- Does the STGB30H60DFB support safe paralleling? Yes, it supports safe paralleling due to its tight parameter distribution and positive VCE(sat) temperature coefficient.
- What is the storage temperature range for the STGB30H60DFB? The storage temperature range (TSTG) is from -55 to 150 °C.
