Overview
The STGB6NC60HDT4 is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device is designed for high-frequency operation and is characterized by its low VCE(sat) and a very soft ultra-fast recovery antiparallel diode. It is available in various packages including I2PAK, D2PAK, TO-220, and TO-220FP, making it versatile for different application needs.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vce) | 600 V |
| DC Collector Current (Ic) | 15 A |
| Pulsed Collector Current (Icm) | 21 A |
| Vce(on) @ Vge, Ic | 2.5 V @ 15 V, 3 A |
| Maximum Power Dissipation | 56 W |
| Package Types | I2PAK, D2PAK, TO-220, TO-220FP |
Key Features
- Low VCE(sat) for reduced power losses
- Very soft ultra-fast recovery antiparallel diode for high-frequency operation
- Low CRES/CIES ratio to prevent cross-conduction susceptibility
- Advanced proprietary trench gate field stop structure for low thermal resistance
- High-frequency operation capability
Applications
The STGB6NC60HDT4 is suitable for a variety of high-power applications, including but not limited to:
- Power supplies and converters
- Motor drives and control systems
- Uninterruptible Power Supplies (UPS)
- Renewable energy systems such as solar and wind power inverters
- High-frequency switching applications
Q & A
- What is the maximum collector-emitter voltage of the STGB6NC60HDT4?
The maximum collector-emitter voltage is 600 V. - What is the maximum DC collector current of the STGB6NC60HDT4?
The maximum DC collector current is 15 A. - What is the pulsed collector current of the STGB6NC60HDT4?
The pulsed collector current is 21 A. - What is the typical Vce(on) at Vge and Ic for the STGB6NC60HDT4?
The typical Vce(on) is 2.5 V at Vge = 15 V and Ic = 3 A. - What are the available package types for the STGB6NC60HDT4?
The available package types are I2PAK, D2PAK, TO-220, and TO-220FP. - What are the key features of the STGB6NC60HDT4?
The key features include low VCE(sat), very soft ultra-fast recovery antiparallel diode, low CRES/CIES ratio, and advanced proprietary trench gate field stop structure. - What are some typical applications of the STGB6NC60HDT4?
Typical applications include power supplies, motor drives, UPS, renewable energy systems, and high-frequency switching applications. - Why is the STGB6NC60HDT4 suitable for high-frequency operation?
The STGB6NC60HDT4 is suitable for high-frequency operation due to its very soft ultra-fast recovery antiparallel diode and low CRES/CIES ratio. - What is the maximum power dissipation of the STGB6NC60HDT4?
The maximum power dissipation is 56 W. - Where can I find detailed specifications for the STGB6NC60HDT4?
Detailed specifications can be found on the official STMicroelectronics website, datasheet documents, and distributor websites such as Mouser and Digi-Key.
