STGWA75H65DFB2
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STMicroelectronics STGWA75H65DFB2

Manufacturer No:
STGWA75H65DFB2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRENCH GATE FIELD-STOP, 650 V, 7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGWA75H65DFB2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. It is part of the HB2 series, which features an advanced proprietary trench gate field-stop structure. This IGBT is designed for high-speed switching applications and is packaged in a TO-247 long leads configuration. It offers a combination of high voltage and current handling capabilities, making it suitable for a variety of power electronics applications.

Key Specifications

ParameterValue
Voltage Rating (VCE)650 V
Current Rating (IC)75 A
Power Dissipation (PD)357 W
Package TypeTO-247 Long Leads
Switching SpeedHigh-speed
StructureTrench gate field-stop

Key Features

  • Advanced proprietary trench gate field-stop structure for improved performance and reliability.
  • High voltage rating of 650 V and high current rating of 75 A.
  • High-speed switching capability, making it suitable for high-frequency applications.
  • TO-247 long leads package for easy mounting and heat dissipation.
  • High power dissipation of 357 W.

Applications

The STGWA75H65DFB2 IGBT is designed for use in various high-power electronic systems, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power inverters.
  • Industrial automation and control systems.
  • High-frequency switching applications.

Q & A

  1. What is the voltage rating of the STGWA75H65DFB2 IGBT? The voltage rating is 650 V.
  2. What is the current rating of the STGWA75H65DFB2 IGBT? The current rating is 75 A.
  3. What type of package does the STGWA75H65DFB2 come in? It comes in a TO-247 long leads package.
  4. What is the power dissipation of the STGWA75H65DFB2? The power dissipation is 357 W.
  5. What is the switching speed of the STGWA75H65DFB2? It has high-speed switching capability.
  6. What is the structure of the STGWA75H65DFB2 IGBT? It features a trench gate field-stop structure.
  7. Where can the STGWA75H65DFB2 be used? It can be used in power supplies, motor drives, renewable energy systems, industrial automation, and high-frequency switching applications.
  8. Who is the manufacturer of the STGWA75H65DFB2? The manufacturer is STMicroelectronics.
  9. What series does the STGWA75H65DFB2 belong to? It belongs to the HB2 series.
  10. Is the STGWA75H65DFB2 RoHS compliant? Yes, it is RoHS compliant.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):115 A
Current - Collector Pulsed (Icm):225 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 75A
Power - Max:357 W
Switching Energy:1.428mJ (on), 1.05mJ (off)
Input Type:Standard
Gate Charge:207 nC
Td (on/off) @ 25°C:28ns/100ns
Test Condition:400V, 75A, 2.2Ohm, 15V
Reverse Recovery Time (trr):88 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247 Long Leads
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