Overview
The FGAF20S65AQ is a Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) produced by onsemi. This device is part of onsemi's fourth generation of RC IGBTs, designed to offer optimal performance for applications requiring low conduction and switching losses. The FGAF20S65AQ features advanced field stop technology, making it particularly suitable for Power Factor Correction (PFC) and welding applications.
Key Specifications
| Symbol | Description | Unit | Min | Typ | Max |
|---|---|---|---|---|---|
| VCES | Collector to Emitter Voltage | V | - | - | 650 |
| VGES | Gate to Emitter Voltage | V | - | - | ±20 |
| IC | Collector Current @ TC = 25°C | A | - | - | 20 |
| ILM | Pulsed Collector Current @ TC = 25°C | A | - | - | 40 |
| TJ | Operating Junction Temperature Range | °C | -55 | - | 175 |
| VGE(th) | Gate to Emitter Threshold Voltage | V | 2.6 | 5.3 | 6.6 |
| VCE(sat) | Collector to Emitter Saturation Voltage @ IC = 20 A, VGE = 15 V | V | - | 1.6 | 2.1 |
| RθJC (IGBT) | Thermal Resistance, Junction to Case, Max. | °C/W | - | - | 1.6 |
Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Coefficient: For easy parallel operating
- High Current Capability: Up to 20 A continuous current
- Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 20 A
- 100% Tested for ILM: Ensuring reliability and performance
- High Input Impedance: Reduces gate drive requirements
- Fast Switching: Optimized for high-frequency applications
- Tight Parameter Distribution: Consistent performance across devices
- Monolithic Reverse Conducting Diode: Integrated diode for improved efficiency
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulations
Applications
- Power Factor Correction (PFC): Ideal for PFC circuits in power supplies and inverters.
- Welding Applications: Suitable for welding equipment due to its high current capability and low switching losses.
Q & A
- What is the maximum collector current of the FGAF20S65AQ?
The maximum collector current of the FGAF20S65AQ is 20 A at TC = 25°C and 10 A at TC = 100°C.
- What is the maximum junction temperature of the FGAF20S65AQ?
The maximum junction temperature is 175°C.
- What is the typical collector to emitter saturation voltage?
The typical collector to emitter saturation voltage is 1.6 V at IC = 20 A and VGE = 15 V.
- Is the FGAF20S65AQ Pb-Free and RoHS Compliant?
- What are the primary applications of the FGAF20S65AQ?
The primary applications include Power Factor Correction (PFC) and welding equipment.
- What is the thermal resistance from junction to case for the FGAF20S65AQ?
The thermal resistance from junction to case is 1.6 °C/W.
- Does the FGAF20S65AQ have a monolithic reverse conducting diode?
- What is the gate to emitter threshold voltage range?
The gate to emitter threshold voltage range is from 2.6 V to 6.6 V.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time is around 17.8 ns, and the typical turn-off delay time is around 81.6 ns.
- What is the maximum power dissipation at TC = 25°C?
The maximum power dissipation at TC = 25°C is 94 W.
