Overview
The AFGB30T65SQDN is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed by onsemi, specifically tailored for automotive and other high-power applications. This IGBT is housed in a TO-263 package and is known for its robust characteristics and reliability. It offers a collector-to-emitter voltage of 650 V and a continuous collector current of 30 A, making it suitable for demanding environments.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-to-Emitter Voltage | VCES | 650 | V |
| Gate-to-Emitter Voltage | VGES | ±20 | V |
| Continuous Collector Current | IC | 30 | A |
| Transient Gate-to-Emitter Voltage | VGES(tr) | ±30 | V |
| Package Type | TO-263 |
Key Features
- High collector-to-emitter voltage of 650 V, ensuring robust operation in high-voltage applications.
- Continuous collector current of 30 A, suitable for high-power requirements.
- Low VCE(sat) for reduced power losses.
- High-speed switching capabilities.
- Rugged and reliable design, suitable for automotive and industrial applications.
Applications
The AFGB30T65SQDN IGBT is primarily designed for automotive applications, including electric vehicles, hybrid vehicles, and other high-power automotive systems. Additionally, it is suitable for industrial power supplies, motor drives, and renewable energy systems where high reliability and performance are critical.
Q & A
- What is the collector-to-emitter voltage of the AFGB30T65SQDN IGBT? The collector-to-emitter voltage is 650 V.
- What is the continuous collector current rating of this IGBT? The continuous collector current is 30 A.
- What package type is the AFGB30T65SQDN IGBT available in? It is available in the TO-263 package.
- What are the typical applications for the AFGB30T65SQDN IGBT? It is used in automotive applications, including electric and hybrid vehicles, as well as in industrial power supplies and motor drives.
- What is the gate-to-emitter voltage range for this IGBT? The gate-to-emitter voltage range is ±20 V.
- Does the AFGB30T65SQDN IGBT have high-speed switching capabilities? Yes, it is designed for high-speed switching applications.
- Is the AFGB30T65SQDN IGBT suitable for high-power industrial applications? Yes, it is suitable for high-power industrial applications due to its robust design and high current handling capability.
- What is the transient gate-to-emitter voltage for this IGBT? The transient gate-to-emitter voltage is ±30 V.
- Is the AFGB30T65SQDN IGBT RoHS compliant? Yes, it is RoHS compliant.
- Where can I find detailed specifications for the AFGB30T65SQDN IGBT? Detailed specifications can be found in the datasheet available on the onsemi website and other authorized distributors like Digi-Key.
