FGA6560WDF
  • Share:

onsemi FGA6560WDF

Manufacturer No:
FGA6560WDF
Manufacturer:
onsemi
Package:
Bulk
Description:
IGBT TRENCH/FS 650V 120A TO3PN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGA6560WDF is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device utilizes novel field stop IGBT technology, making it ideal for applications that require low conduction and switching losses. It is particularly suited for welder applications due to its high current capability and fast switching characteristics.

Key Specifications

ParameterValue
Voltage Rating (Vce)650V
Current Rating (Ic)60A
Maximum Junction Temperature (Tj)175°C
PackagingTO-3PN
Power Dissipation (Pd)153W
Saturation Voltage (Vce(sat))Low
Input ImpedanceHigh

Key Features

  • High current capability of 60A
  • Low saturation voltage (Vce(sat))
  • High input impedance
  • Fast switching times
  • Positive temperature coefficient for easy parallel operation
  • Low conduction and switching losses

Applications

The FGA6560WDF IGBT is primarily designed for welder applications, where its high current capability, low losses, and fast switching are crucial. It can also be used in other high-power applications requiring similar performance characteristics.

Q & A

  1. What is the voltage rating of the FGA6560WDF IGBT?
    The voltage rating of the FGA6560WDF IGBT is 650V.
  2. What is the current rating of the FGA6560WDF IGBT?
    The current rating of the FGA6560WDF IGBT is 60A.
  3. What is the maximum junction temperature of the FGA6560WDF IGBT?
    The maximum junction temperature of the FGA6560WDF IGBT is 175°C.
  4. What type of packaging does the FGA6560WDF IGBT use?
    The FGA6560WDF IGBT uses TO-3PN packaging.
  5. What are the typical applications for the FGA6560WDF IGBT?
    The FGA6560WDF IGBT is typically used in welder applications and other high-power applications requiring low conduction and switching losses.
  6. Does the FGA6560WDF IGBT have a positive temperature coefficient?
    Yes, the FGA6560WDF IGBT has a positive temperature coefficient, which makes it easy to operate in parallel.
  7. What are the key features of the FGA6560WDF IGBT?
    The key features include high current capability, low saturation voltage, high input impedance, and fast switching times.
  8. Is the FGA6560WDF IGBT suitable for high-power applications?
    Yes, the FGA6560WDF IGBT is suitable for high-power applications due to its high current capability and low losses.
  9. Where can I find detailed specifications for the FGA6560WDF IGBT?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Mouser Electronics and LCSC.
  10. Is the FGA6560WDF IGBT RoHS compliant?
    Yes, the FGA6560WDF IGBT is RoHS compliant.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):120 A
Current - Collector Pulsed (Icm):180 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 60A
Power - Max:306 W
Switching Energy:2.46mJ (on), 520µJ (off)
Input Type:Standard
Gate Charge:84 nC
Td (on/off) @ 25°C:25.6ns/71ns
Test Condition:400V, 60A, 6Ohm, 15V
Reverse Recovery Time (trr):110 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3PN
0 Remaining View Similar

In Stock

$3.16
148

Please send RFQ , we will respond immediately.

Similar Products

Part Number FGA6560WDF FGA6530WDF
Manufacturer onsemi onsemi
Product Status Last Time Buy Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 120 A 60 A
Current - Collector Pulsed (Icm) 180 A 90 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A 2.2V @ 15V, 30A
Power - Max 306 W 176 W
Switching Energy 2.46mJ (on), 520µJ (off) 960µJ (on), 162µJ (off)
Input Type Standard Standard
Gate Charge 84 nC 37.4 nC
Td (on/off) @ 25°C 25.6ns/71ns 12ns/42.4ns
Test Condition 400V, 60A, 6Ohm, 15V 400V, 30A, 6Ohm, 15V
Reverse Recovery Time (trr) 110 ns 81 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Supplier Device Package TO-3PN TO-3PN

Related Product By Categories

FGL40N120ANDTU
FGL40N120ANDTU
onsemi
IGBT NPT 1200V 64A TO264-3
STGF10NC60KD
STGF10NC60KD
STMicroelectronics
IGBT 600V 9A 25W TO220FP
FGA50T65SHD
FGA50T65SHD
onsemi
IGBT TRENCH/FS 650V 100A TO3PN
STGWA40M120DF3
STGWA40M120DF3
STMicroelectronics
IGBT 1200V 80A 468W TO-247-3
STGW80H65DFB
STGW80H65DFB
STMicroelectronics
IGBT 650V 120A 469W TO-247
STGD3HF60HDT4
STGD3HF60HDT4
STMicroelectronics
IGBT 600V 7.5A 38W DPAK
STGB40H65FB
STGB40H65FB
STMicroelectronics
IGBT BIPO 650V 40A D2PAK
STGW25M120DF3
STGW25M120DF3
STMicroelectronics
IGBT 1200V 50A 375W
STGD18N40LZT4
STGD18N40LZT4
STMicroelectronics
IGBT 420V 25A 125W DPAK
FGB3040G2-F085C
FGB3040G2-F085C
onsemi
ECOSPARK2 IGN-IGBT TO263
FGD3040G2_F085
FGD3040G2_F085
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
STGWA80H65DFB
STGWA80H65DFB
STMicroelectronics
IGBT BIPO 650V 80A TO247-3

Related Product By Brand

MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC