FGH40T120SMD-F155
  • Share:

onsemi FGH40T120SMD-F155

Manufacturer No:
FGH40T120SMD-F155
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 1200V 80A 555W TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGH40T120SMD-F155 is a Field Stop Trench Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device is designed using innovative field stop trench technology, which offers optimum performance for hard switching applications. It is particularly suited for use in solar inverters, UPS systems, welders, and power factor correction (PFC) applications.

Key Specifications

Parameter Symbol Ratings Unit
Collector to Emitter Voltage VCES 1200 V
Gate to Emitter Voltage VGES ±25 V
Transient Gate to Emitter Voltage ±30 V
Collector Current (TC = 25°C) IC 80 A
Collector Current (TC = 100°C) IC 40 A
Clamped Inductive Load Current (TC = 25°C) ILM 160 A
Pulsed Collector Current ICM 160 A
Diode Continuous Forward Current (TC = 25°C) IF 80 A
Diode Continuous Forward Current (TC = 100°C) IF 40 A
Diode Maximum Forward Current IFM 240 A
Maximum Power Dissipation (TC = 25°C) PD 555 W
Maximum Power Dissipation (TC = 100°C) PD 277 W
Operating Junction Temperature TJ −55 to +175 °C
Storage Temperature Range Tstg −55 to +175 °C
Maximum Lead Temperature for Soldering TL 300 °C

Key Features

  • Field Stop Trench Technology: Enhances performance and efficiency in hard switching applications.
  • High Speed Switching: Optimized for fast switching times, making it suitable for high-frequency applications.
  • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A, reducing power losses.
  • Positive Temperature Coefficient: Ensures stable operation over a wide temperature range.
  • High Input Impedance: Reduces the need for complex gate drive circuits.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

  • Solar Inverters: Ideal for converting DC power from solar panels to AC power for the grid.
  • UPS Systems: Used in uninterruptible power supplies to ensure continuous power delivery.
  • Welders: Suitable for high-power welding applications requiring efficient and reliable switching.
  • Power Factor Correction (PFC): Enhances power factor in power supplies and other AC-DC conversion systems.

Q & A

  1. What is the maximum collector to emitter voltage of the FGH40T120SMD-F155 IGBT?

    The maximum collector to emitter voltage (VCES) is 1200 V.

  2. What are the typical applications for the FGH40T120SMD-F155?

    Typical applications include solar inverters, UPS systems, welders, and power factor correction (PFC) applications.

  3. What is the collector current rating at 25°C and 100°C?

    The collector current rating is 80 A at 25°C and 40 A at 100°C.

  4. Does the FGH40T120SMD-F155 have any environmental compliance?

    Yes, it is Pb-Free and RoHS Compliant.

  5. What is the maximum power dissipation at 25°C and 100°C?

    The maximum power dissipation is 555 W at 25°C and 277 W at 100°C.

  6. What is the operating junction temperature range?

    The operating junction temperature range is −55 to +175 °C.

  7. What is the significance of the field stop trench technology in this IGBT?

    The field stop trench technology enhances performance and efficiency in hard switching applications.

  8. What is the saturation voltage (VCE(sat)) at IC = 40 A?

    The saturation voltage (VCE(sat)) is 1.8 V at IC = 40 A.

  9. Is the FGH40T120SMD-F155 suitable for high-frequency applications?

    Yes, it is optimized for high speed switching, making it suitable for high-frequency applications.

  10. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 300 °C.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):160 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 40A
Power - Max:555 W
Switching Energy:2.7mJ (on), 1.1mJ (off)
Input Type:Standard
Gate Charge:370 nC
Td (on/off) @ 25°C:40ns/475ns
Test Condition:600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr):65 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$9.34
46

Please send RFQ , we will respond immediately.

Same Series
FGH40T120SMD-F155
FGH40T120SMD-F155
IGBT 1200V 80A 555W TO247-3

Similar Products

Part Number FGH40T120SMD-F155 FGH40T100SMD-F155
Manufacturer onsemi onsemi
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V 1000 V
Current - Collector (Ic) (Max) 80 A 80 A
Current - Collector Pulsed (Icm) 160 A 120 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A 2.3V @ 15V, 40A
Power - Max 555 W 333 W
Switching Energy 2.7mJ (on), 1.1mJ (off) 2.35mJ (on), 1.15mJ (off)
Input Type Standard Standard
Gate Charge 370 nC 398 nC
Td (on/off) @ 25°C 40ns/475ns 29ns/285ns
Test Condition 600V, 40A, 10Ohm, 15V 600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) 65 ns 78 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3

Related Product By Categories

STGWA40HP65FB2
STGWA40HP65FB2
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 4
STGB3NC120HDT4
STGB3NC120HDT4
STMicroelectronics
IGBT 1200V 14A 75W D2PAK
FGH60T65SHD-F155
FGH60T65SHD-F155
onsemi
IGBT TRENCH/FS 650V 120A TO247
STGWA25M120DF3
STGWA25M120DF3
STMicroelectronics
IGBT 1200V 50A 375W TO247
STGW20H60DF
STGW20H60DF
STMicroelectronics
IGBT 600V 40A 167W TO247
STGW20NC60VD
STGW20NC60VD
STMicroelectronics
IGBT 600V 60A 200W TO247
STGWT60H65DFB
STGWT60H65DFB
STMicroelectronics
IGBT 650V 80A 375W TO3P-3L
STGF19NC60KD
STGF19NC60KD
STMicroelectronics
IGBT 600V 16A 32W TO220FP
STGYA120M65DF2
STGYA120M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
AFGB30T65SQDN
AFGB30T65SQDN
onsemi
650V/30A FS4 IGBT TO263 A
FGD3245G2-F085C
FGD3245G2-F085C
onsemi
ECOSPARK2 IGN-IGBT TO252
FGA50T65SHD-01
FGA50T65SHD-01
onsemi
FGA50T65SHD-01

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP