Overview
The STGWA40H120DF2 is a high-speed trench gate field-stop IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics. This device is part of the H series, which is optimized for high switching frequency converters, offering a balance between conduction and switching losses to maximize efficiency. The STGWA40H120DF2 features advanced proprietary technology, ensuring high performance and reliability in various power conversion applications.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCES | Collector-emitter voltage (VGE = 0) | 1200 | V |
| IC | Continuous collector current at TC = 25 °C | 80 | A |
| IC | Continuous collector current at TC = 100 °C | 40 | A |
| ICP(1) | Pulsed collector current | 160 | A |
| VGE | Gate-emitter voltage | ±20 | V |
| VGE | Transient gate-emitter voltage (tp ≤ 10 μs, D ≤ 0.01) | ±30 | V |
| IF | Continuous forward current at TC = 25 °C | 80 | A |
| IF | Continuous forward current at TC = 100 °C | 40 | A |
| IFP(1) | Pulsed forward current | 160 | A |
| PTOT | Total dissipation at TC = 25 °C | 468 | W |
| TSTG | Storage temperature range | -55 to 150 | °C |
| TJ | Operating junction temperature range | -55 to 175 | °C |
| RthJC | Thermal resistance junction-case IGBT | 0.32 | °C/W |
| RthJC | Thermal resistance junction-case diode | 1.3 | °C/W |
| RthJA | Thermal resistance junction-ambient | 50 | °C/W |
| VCE(sat) | Collector-emitter saturation voltage | 2.1 V (typ.) @ IC = 40 A | V |
| td(on) | Turn-on delay time | 18 ns (typ.) | ns |
| td(off) | Turn-off delay time | 152 ns (typ.) | ns |
Key Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 2.1 V (typ.) @ IC = 40 A
- 5 μs minimum short circuit withstand time at TJ=150 °C
- Safe paralleling due to slightly positive VCE(sat) temperature coefficient and tight parameter distribution
- Very fast recovery antiparallel diode
- Low thermal resistance
Applications
- Uninterruptible power supply (UPS)
- Welding machines
- Photovoltaic inverters
- Power factor correction (PFC)
- High frequency converters
Q & A
- What is the maximum collector-emitter voltage of the STGWA40H120DF2?
The maximum collector-emitter voltage (VCES) is 1200 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 80 A at 25 °C and 40 A at 100 °C.
- What is the typical turn-on delay time?
The typical turn-on delay time (td(on)) is 18 ns.
- What is the thermal resistance junction-case for the IGBT?
The thermal resistance junction-case (RthJC) for the IGBT is 0.32 °C/W.
- Can the STGWA40H120DF2 be used in parallel?
- What are the typical applications of the STGWA40H120DF2?
The device is typically used in uninterruptible power supplies, welding machines, photovoltaic inverters, power factor correction, and high frequency converters.
- What is the maximum junction temperature of the STGWA40H120DF2?
The maximum junction temperature (TJ) is 175 °C.
- What is the collector-emitter saturation voltage at 40 A?
The collector-emitter saturation voltage (VCE(sat)) is 2.1 V (typ.) at IC = 40 A.
- How long can the STGWA40H120DF2 withstand a short circuit?
The device can withstand a short circuit for a minimum of 5 μs at TJ=150 °C.
- What is the package type of the STGWA40H120DF2?
The device is available in TO-247 and TO-247 long leads packages.
