Overview
The FGH40T120SMD is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by onsemi, utilizing innovative field stop trench technology. This IGBT is designed to offer optimum performance for hard switching applications, including solar inverters, UPS systems, welders, and Power Factor Correction (PFC) applications. It features a robust design with positive temperature coefficient, high-speed switching capabilities, and low saturation voltage, making it an ideal choice for demanding power management tasks.
Key Specifications
| Parameter | Symbol | Typical/Maximum Value | Unit |
|---|---|---|---|
| Collector to Emitter Voltage | VCES | 1200 | V |
| Gate to Emitter Voltage | VGES | ±25 | V |
| Transient Gate to Emitter Voltage | ±30 | V | |
| Collector Current (TC = 25°C) | IC | 80 | A |
| Collector Current (TC = 100°C) | IC | 40 | A |
| Clamped Inductive Load Current | ILM | 160 | A |
| Pulsed Collector Current | ICM | 160 | A |
| Diode Continuous Forward Current (TC = 25°C) | IF | 80 | A |
| Diode Continuous Forward Current (TC = 100°C) | IF | 40 | A |
| Diode Maximum Forward Current | IFM | 240 | A |
| Maximum Power Dissipation (TC = 25°C) | PD | 555 | W |
| Maximum Power Dissipation (TC = 100°C) | PD | 277 | W |
| Operating Junction Temperature | TJ | -55 to +175 | °C |
| Storage Temperature Range | Tstg | -55 to +175 | °C |
| Maximum Lead Temperature for Soldering | TL | 300 | °C |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.8 V @ IC = 40 A | V |
| Rise Time | tr | 47 ns | ns |
| Total Gate Charge | Qg | 370 nC | nC |
Key Features
- FS Trench Technology: Utilizes field stop trench technology for enhanced performance.
- Positive Temperature Coefficient: Ensures stable operation across a wide temperature range.
- High Speed Switching: Optimized for high-speed switching applications.
- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A, reducing power losses.
- 100% ILM Tested: All parts are tested for clamped inductive load current.
- High Input Impedance: Reduces the need for external gate resistors.
- RoHS Compliant: Lead-free and compliant with RoHS standards.
Applications
- Solar Inverters: Ideal for solar power conversion systems.
- UPS Systems: Suitable for uninterruptible power supply applications.
- Welders: Used in welding equipment due to its high current handling capability.
- Power Factor Correction (PFC): Enhances power factor in various power supply systems.
Q & A
- What is the maximum collector to emitter voltage of the FGH40T120SMD IGBT?
The maximum collector to emitter voltage is 1200 V. - What is the typical collector-emitter saturation voltage of the FGH40T120SMD?
The typical collector-emitter saturation voltage is 1.8 V at IC = 40 A. - What are the typical applications of the FGH40T120SMD IGBT?
The typical applications include solar inverters, UPS systems, welders, and PFC applications. - Is the FGH40T120SMD RoHS compliant?
Yes, the FGH40T120SMD is RoHS compliant and lead-free. - What is the maximum operating junction temperature of the FGH40T120SMD?
The maximum operating junction temperature is 175°C. - What is the package type of the FGH40T120SMD IGBT?
The package type is TO-247-3. - What is the maximum power dissipation of the FGH40T120SMD at 25°C?
The maximum power dissipation at 25°C is 555 W. - Does the FGH40T120SMD have an anti-parallel diode?
Yes, the FGH40T120SMD includes an anti-parallel diode. - What is the rise time of the FGH40T120SMD IGBT?
The rise time is typically 47 ns. - What is the total gate charge of the FGH40T120SMD?
The total gate charge is typically 370 nC.
