NGD8205ANT4G
  • Share:

onsemi NGD8205ANT4G

Manufacturer No:
NGD8205ANT4G
Manufacturer:
onsemi
Package:
Bulk
Description:
INSULATED GATE BIPOLAR TRANSISTO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NGD8205ANT4G is an N-Channel Insulated Gate Bipolar Transistor (IGBT) chip produced by onsemi. This component is designed to handle high voltage and current requirements, making it suitable for various power management applications. The NGD8205ANT4G is capable of handling up to 390V and 20A, with a power dissipation of 125mW. It is packaged in a TO-252-3 (DPAK) case, which is a surface mount package. Despite being listed as obsolete, this IGBT remains a reliable choice for applications requiring consistent operation in diverse environmental conditions, with a junction temperature range of -55°C to 150°C.

Key Specifications

Parameter Value
Collector-Emitter Clamp Voltage TYP BVCES@IC (V) 350
Collector Current-Continuous ICmax (A) 20
VCE(sat) - Collector-Emitter Saturation Voltage (V) 1.3
EAS - Single Pulse Collector-to-Emitter Avalanche Energy 250
Max Power Dissipation (W) 125
RoHS Yes
Package/Case TO-252-3, DPAK(2Leads+Tab), SC-63

Key Features

  • High efficiency, low on-resistance
  • Low gate charge
  • Fast switching
  • Low thermal resistance
  • RoHS compliant
  • Halogen-free

Applications

The NGD8205ANT4G is suitable for a variety of applications that require efficient and reliable power management. These include:

  • Small footprint designs, offering significant board space savings.
  • Protecting electronics in demanding environments.
  • High-power switching applications where fast switching and low thermal resistance are critical.

Q & A

  1. What is the maximum voltage and current rating of the NGD8205ANT4G?

    The NGD8205ANT4G can handle up to 390V and 20A.

  2. What is the power dissipation of the NGD8205ANT4G?

    The power dissipation is 125mW.

  3. What is the package type of the NGD8205ANT4G?

    The package type is TO-252-3 (DPAK).

  4. Is the NGD8205ANT4G RoHS compliant?

    Yes, the NGD8205ANT4G is RoHS compliant.

  5. What is the junction temperature range of the NGD8205ANT4G?

    The junction temperature range is -55°C to 150°C.

  6. What are some key features of the NGD8205ANT4G?

    High efficiency, low on-resistance, low gate charge, fast switching, and low thermal resistance.

  7. Is the NGD8205ANT4G halogen-free?

    Yes, the NGD8205ANT4G is halogen-free.

  8. What types of applications is the NGD8205ANT4G suitable for?

    It is suitable for small footprint designs, protecting electronics, and high-power switching applications.

  9. Why is the NGD8205ANT4G listed as obsolete?

    Although listed as obsolete, it remains a reliable choice for many applications due to its performance characteristics.

  10. How is the NGD8205ANT4G packaged for shipping?

    The products are carefully packed in anti-static bags to provide ESD anti-static protection, with durable outer packaging and secure closure.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):390 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):50 A
Vce(on) (Max) @ Vge, Ic:1.9V @ 4.5V, 20A
Power - Max:125 W
Switching Energy:- 
Input Type:Logic
Gate Charge:- 
Td (on/off) @ 25°C:-/5µs
Test Condition:300V, 9A, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252, (D-Pak)
0 Remaining View Similar

In Stock

$0.74
79

Please send RFQ , we will respond immediately.

Same Series
EGP10D-E3/54
EGP10D-E3/54
DIODE GEN PURP 200V 1A DO204AL
EGP10BE-M3/73
EGP10BE-M3/73
DIODE GEN PURP 100V 1A DO204AL
EGP10DEHM3/73
EGP10DEHM3/73
DIODE GEN PURP 200V 1A DO204AL
EGP10D-M3/73
EGP10D-M3/73
DIODE GEN PURP 200V 1A DO204AL
EGP10GE-M3/73
EGP10GE-M3/73
DIODE GEN PURP 400V 1A DO204AL
EGP10GHE3/53
EGP10GHE3/53
DIODE GEN PURP 400V 1A DO204AL
EGP10GHM3/73
EGP10GHM3/73
DIODE GEN PURP 400V 1A DO204AL
EGP10AHM3/54
EGP10AHM3/54
DIODE GEN PURP 50V 1A DO204AL
EGP10CE-M3/54
EGP10CE-M3/54
DIODE GEN PURP 150V 1A DO204AL
EGP10DHM3/54
EGP10DHM3/54
DIODE GEN PURP 200V 1A DO204AL
EGP10FHM3/54
EGP10FHM3/54
DIODE GEN PURP 300V 1A DO204AL
EGP10GE-M3/54
EGP10GE-M3/54
DIODE GEN PURP 400V 1A DO204AL

Similar Products

Part Number NGD8205ANT4G NGD8205NT4G NGD8201ANT4G
Manufacturer onsemi onsemi Littelfuse Inc.
Product Status Obsolete Obsolete Obsolete
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) 390 V 390 V 440 V
Current - Collector (Ic) (Max) 20 A 20 A 20 A
Current - Collector Pulsed (Icm) 50 A 50 A 50 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A 1.9V @ 4.5V, 20A 1.9V @ 4.5V, 20A
Power - Max 125 W 125 W 125 W
Switching Energy - - -
Input Type Logic Logic Logic
Gate Charge - - -
Td (on/off) @ 25°C -/5µs -/5µs -/5µs
Test Condition 300V, 9A, 1kOhm, 5V 300V, 9A, 1kOhm, 5V 300V, 9A, 1kOhm, 5V
Reverse Recovery Time (trr) - - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252, (D-Pak) DPAK TO-252, (D-Pak)

Related Product By Categories

FGY120T65SPD-F085
FGY120T65SPD-F085
onsemi
IGBT, 650V, 120A FIELD STOP, TRE
STGD19N40LZ
STGD19N40LZ
STMicroelectronics
IGBT 20V 40A DPAK
FGH40N60UFDTU
FGH40N60UFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
STGWA25M120DF3
STGWA25M120DF3
STMicroelectronics
IGBT 1200V 50A 375W TO247
STGW40NC60KD
STGW40NC60KD
STMicroelectronics
IGBT 600V 70A 250W TO247
FGH75T65SHDT-F155
FGH75T65SHDT-F155
onsemi
IGBT 650V 150A 455W TO-247
FGH75T65SQDNL4
FGH75T65SQDNL4
onsemi
650V/75 FAST IGBT FSIII T
FGA6065ADF
FGA6065ADF
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
STGWA60H65DFB
STGWA60H65DFB
STMicroelectronics
IGBT BIPO 650V 60A TO247-3
STGB20NC60VT4
STGB20NC60VT4
STMicroelectronics
IGBT 600V 60A 200W D2PAK
NGTB40N120FL2WG
NGTB40N120FL2WG
onsemi
IGBT TRENCH/FS 1200V 80A TO247
STGFW40V60DF
STGFW40V60DF
STMicroelectronics
IGBT 600V 80A 62.5W TO-3PF

Related Product By Brand

MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP