NGD8205ANT4G
  • Share:

onsemi NGD8205ANT4G

Manufacturer No:
NGD8205ANT4G
Manufacturer:
onsemi
Package:
Bulk
Description:
INSULATED GATE BIPOLAR TRANSISTO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NGD8205ANT4G is an N-Channel Insulated Gate Bipolar Transistor (IGBT) chip produced by onsemi. This component is designed to handle high voltage and current requirements, making it suitable for various power management applications. The NGD8205ANT4G is capable of handling up to 390V and 20A, with a power dissipation of 125mW. It is packaged in a TO-252-3 (DPAK) case, which is a surface mount package. Despite being listed as obsolete, this IGBT remains a reliable choice for applications requiring consistent operation in diverse environmental conditions, with a junction temperature range of -55°C to 150°C.

Key Specifications

Parameter Value
Collector-Emitter Clamp Voltage TYP BVCES@IC (V) 350
Collector Current-Continuous ICmax (A) 20
VCE(sat) - Collector-Emitter Saturation Voltage (V) 1.3
EAS - Single Pulse Collector-to-Emitter Avalanche Energy 250
Max Power Dissipation (W) 125
RoHS Yes
Package/Case TO-252-3, DPAK(2Leads+Tab), SC-63

Key Features

  • High efficiency, low on-resistance
  • Low gate charge
  • Fast switching
  • Low thermal resistance
  • RoHS compliant
  • Halogen-free

Applications

The NGD8205ANT4G is suitable for a variety of applications that require efficient and reliable power management. These include:

  • Small footprint designs, offering significant board space savings.
  • Protecting electronics in demanding environments.
  • High-power switching applications where fast switching and low thermal resistance are critical.

Q & A

  1. What is the maximum voltage and current rating of the NGD8205ANT4G?

    The NGD8205ANT4G can handle up to 390V and 20A.

  2. What is the power dissipation of the NGD8205ANT4G?

    The power dissipation is 125mW.

  3. What is the package type of the NGD8205ANT4G?

    The package type is TO-252-3 (DPAK).

  4. Is the NGD8205ANT4G RoHS compliant?

    Yes, the NGD8205ANT4G is RoHS compliant.

  5. What is the junction temperature range of the NGD8205ANT4G?

    The junction temperature range is -55°C to 150°C.

  6. What are some key features of the NGD8205ANT4G?

    High efficiency, low on-resistance, low gate charge, fast switching, and low thermal resistance.

  7. Is the NGD8205ANT4G halogen-free?

    Yes, the NGD8205ANT4G is halogen-free.

  8. What types of applications is the NGD8205ANT4G suitable for?

    It is suitable for small footprint designs, protecting electronics, and high-power switching applications.

  9. Why is the NGD8205ANT4G listed as obsolete?

    Although listed as obsolete, it remains a reliable choice for many applications due to its performance characteristics.

  10. How is the NGD8205ANT4G packaged for shipping?

    The products are carefully packed in anti-static bags to provide ESD anti-static protection, with durable outer packaging and secure closure.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):390 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):50 A
Vce(on) (Max) @ Vge, Ic:1.9V @ 4.5V, 20A
Power - Max:125 W
Switching Energy:- 
Input Type:Logic
Gate Charge:- 
Td (on/off) @ 25°C:-/5µs
Test Condition:300V, 9A, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252, (D-Pak)
0 Remaining View Similar

In Stock

$0.74
79

Please send RFQ , we will respond immediately.

Same Series
EGP10BEHM3/73
EGP10BEHM3/73
DIODE GEN PURP 100V 1A DO204AL
EGP10BE-M3/73
EGP10BE-M3/73
DIODE GEN PURP 100V 1A DO204AL
EGP10BHM3/73
EGP10BHM3/73
DIODE GEN PURP 100V 1A DO204AL
EGP10B-M3/73
EGP10B-M3/73
DIODE GEN PURP 100V 1A DO204AL
EGP10CHM3/73
EGP10CHM3/73
DIODE GEN PURP 150V 1A DO204AL
EGP10DHE3/53
EGP10DHE3/53
DIODE GEN PURP 200V 1A DO204AL
EGP10DHM3/73
EGP10DHM3/73
DIODE GEN PURP 200V 1A DO204AL
EGP10FHM3/73
EGP10FHM3/73
DIODE GEN PURP 300V 1A DO204AL
EGP10GHE3/53
EGP10GHE3/53
DIODE GEN PURP 400V 1A DO204AL
EGP10BE-M3/54
EGP10BE-M3/54
DIODE GEN PURP 100V 1A DO204AL
EGP10GE-M3/54
EGP10GE-M3/54
DIODE GEN PURP 400V 1A DO204AL
EGP10GHM3/54
EGP10GHM3/54
DIODE GEN PURP 400V 1A DO204AL

Similar Products

Part Number NGD8205ANT4G NGD8205NT4G NGD8201ANT4G
Manufacturer onsemi onsemi Littelfuse Inc.
Product Status Obsolete Obsolete Obsolete
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) 390 V 390 V 440 V
Current - Collector (Ic) (Max) 20 A 20 A 20 A
Current - Collector Pulsed (Icm) 50 A 50 A 50 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A 1.9V @ 4.5V, 20A 1.9V @ 4.5V, 20A
Power - Max 125 W 125 W 125 W
Switching Energy - - -
Input Type Logic Logic Logic
Gate Charge - - -
Td (on/off) @ 25°C -/5µs -/5µs -/5µs
Test Condition 300V, 9A, 1kOhm, 5V 300V, 9A, 1kOhm, 5V 300V, 9A, 1kOhm, 5V
Reverse Recovery Time (trr) - - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252, (D-Pak) DPAK TO-252, (D-Pak)

Related Product By Categories

FGH60N60SFDTU
FGH60N60SFDTU
onsemi
IGBT FIELD STOP 600V 120A TO247
FGD3245G2-F085
FGD3245G2-F085
onsemi
IGBT 450V 23A TO252AA
STGF10NB60SD
STGF10NB60SD
STMicroelectronics
IGBT 600V 23A 25W TO220FP
STGD10HF60KD
STGD10HF60KD
STMicroelectronics
IGBT 600V 10A DPAK
STGWA25M120DF3
STGWA25M120DF3
STMicroelectronics
IGBT 1200V 50A 375W TO247
AFGHL75T65SQDC
AFGHL75T65SQDC
onsemi
IGBT WITH SIC COPACK DIODE IGBT
FGD3040G2-F085
FGD3040G2-F085
onsemi
IGBT 400V 41A TO252AA
STGW40H65DFB
STGW40H65DFB
STMicroelectronics
IGBT 650V 80A 283W TO-247
NGTB40N65FL2WG
NGTB40N65FL2WG
onsemi
IGBT TRENCH/FS 650V 80A TO247
FGAF20N60SMD
FGAF20N60SMD
onsemi
IGBT FIELD STOP 600V 40A TO3PF
STGWT20H65FB
STGWT20H65FB
STMicroelectronics
IGBT 650V 40A 168W TO3P
STGW35HF60WD
STGW35HF60WD
STMicroelectronics
IGBT 600V 60A 200W TO-247

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5