STGD10HF60KD
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STMicroelectronics STGD10HF60KD

Manufacturer No:
STGD10HF60KD
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IGBT 600V 10A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STGD10HF60KD is an automotive-grade Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. This device combines advanced PowerMESH™ technology for the IGBT and Turbo 2 Ultrafast high voltage technology for the diode. It is designed to provide high performance and reliability in various power management applications.

Key Specifications

ParameterValue
Current Rating10 A
Voltage Rating600 V
Package TypeTO-247 long leads
Short-Circuit RuggednessYes
TechnologyPowerMESH™ for IGBT, Turbo 2 Ultrafast for diode
Thermal ResistanceLow thermal resistance

Key Features

  • Advanced PowerMESH™ process for the IGBT
  • Turbo 2 Ultrafast high voltage technology for the diode
  • Short-circuit ruggedness
  • Low thermal resistance
  • Automotive-grade reliability
  • TO-247 long leads package

Applications

The STGD10HF60KD is suitable for various automotive and industrial power management applications, including but not limited to:

  • Electric vehicles and hybrid electric vehicles
  • Power inverters and converters
  • Motor drives and control systems
  • High-power switching applications

Q & A

  1. What is the current rating of the STGD10HF60KD?
    The current rating of the STGD10HF60KD is 10 A.
  2. What is the voltage rating of the STGD10HF60KD?
    The voltage rating of the STGD10HF60KD is 600 V.
  3. What package type does the STGD10HF60KD come in?
    The STGD10HF60KD comes in a TO-247 long leads package.
  4. Is the STGD10HF60KD short-circuit rugged?
    Yes, the STGD10HF60KD is short-circuit rugged.
  5. What technologies are used in the STGD10HF60KD?
    The STGD10HF60KD uses PowerMESH™ technology for the IGBT and Turbo 2 Ultrafast technology for the diode.
  6. What are the typical applications of the STGD10HF60KD?
    The STGD10HF60KD is typically used in automotive and industrial power management applications, including electric vehicles, power inverters, motor drives, and high-power switching systems.
  7. Does the STGD10HF60KD have low thermal resistance?
    Yes, the STGD10HF60KD has low thermal resistance.
  8. Is the STGD10HF60KD automotive-grade?
    Yes, the STGD10HF60KD is automotive-grade.
  9. Where can I find detailed specifications for the STGD10HF60KD?
    Detailed specifications for the STGD10HF60KD can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Mouser and Digi-Key.
  10. What is the significance of the PowerMESH™ and Turbo 2 Ultrafast technologies in the STGD10HF60KD?
    The PowerMESH™ and Turbo 2 Ultrafast technologies enhance the performance and reliability of the IGBT and diode, respectively, by improving switching characteristics and reducing losses.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):18 A
Current - Collector Pulsed (Icm):30 A
Vce(on) (Max) @ Vge, Ic:2.75V @ 15V, 5A
Power - Max:62.5 W
Switching Energy:45µJ (on), 105µJ (off)
Input Type:Standard
Gate Charge:23 nC
Td (on/off) @ 25°C:9.5ns/87ns
Test Condition:400V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr):50 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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