Overview
The STGB10H60DF is a high-speed Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which offers an optimal balance between conduction and switching losses, making it highly efficient for high switching frequency converters. The STGB10H60DF is available in various packages, including TO-220, TO-220FP, and D²PAK, catering to different application requirements.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter breakdown voltage (VBRCES) | 600 | V |
| Collector-emitter saturation voltage (VCE(sat)) at 25°C | 1.50 - 1.95 | V |
| Gate threshold voltage (VGE(th)) | 5 - 7 | V |
| Collector cut-off current (ICES) | 25 μA | A |
| Gate-emitter leakage current (IGES) | ±250 nA | A |
| Input capacitance (Cies) | 1300 pF | pF |
| Output capacitance (Coes) | 60 pF | pF |
| Reverse transfer capacitance (Cres) | 30 pF | pF |
| Total gate charge (Qg) | 57 nC | nC |
| Thermal resistance, junction-to-case (RthJC) for IGBT | 1.3 °C/W | °C/W |
| Thermal resistance, junction-to-case (RthJC) for diode | 2.78 °C/W | °C/W |
| Thermal resistance, junction-to-ambient (RthJA) | 62.5 °C/W | °C/W |
Key Features
- High-speed switching capabilities
- Tight parameter distribution for safer paralleling operations
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
- Slightly positive VCE(sat) temperature coefficient
Applications
- Motor control systems
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC) circuits
Q & A
- What is the collector-emitter breakdown voltage of the STGB10H60DF?
The collector-emitter breakdown voltage (VBRCES) is 600 V.
- What are the typical and maximum values of the collector-emitter saturation voltage at 25°C?
The typical and maximum values of VCE(sat) at 25°C are 1.50 V and 1.95 V, respectively.
- What is the gate threshold voltage range?
The gate threshold voltage (VGE(th)) ranges from 5 V to 7 V.
- What is the thermal resistance, junction-to-case for the IGBT?
The thermal resistance, junction-to-case (RthJC) for the IGBT is 1.3 °C/W.
- What are the key features of the STGB10H60DF?
The key features include high-speed switching, tight parameter distribution, low thermal resistance, short-circuit rating, and an ultrafast soft recovery antiparallel diode.
- In which packages is the STGB10H60DF available?
The STGB10H60DF is available in TO-220, TO-220FP, and D²PAK packages.
- What are the typical applications of the STGB10H60DF?
The typical applications include motor control systems, UPS, and PFC circuits.
- What is the input capacitance of the STGB10H60DF?
The input capacitance (Cies) is 1300 pF.
- What is the total gate charge of the STGB10H60DF?
The total gate charge (Qg) is 57 nC.
- What is the reverse recovery time of the antiparallel diode?
The reverse recovery time (trr) of the antiparallel diode is approximately 107 ns at 25°C and 161 ns at 175°C.
