STGW40H65DFB-4
  • Share:

STMicroelectronics STGW40H65DFB-4

Manufacturer No:
STGW40H65DFB-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGW40H65DFB-4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the advanced HB series, utilizing a proprietary trench gate and field-stop structure. It is designed to optimize the balance between conduction and switching losses, making it highly efficient for various high-frequency applications. The IGBT features a maximum collector-emitter voltage of 650V and a continuous collector current of 80A at 25°C, with a maximum junction temperature of 175°C.

Key Specifications

Parameter Value Unit
Part Number STGW40H65DFB-4
Description IGBT Trench Field Stop
Operating Temperature -55°C to 175°C (TJ) °C
Current - Collector (Ic) (Max) 80A A
Current - Collector Pulsed (Icm) 160A A
Voltage - Collector Emitter Breakdown (Max) 650V V
Gate Charge 210nC nC
Package / Case TO-247-4L
Mounting Type Through Hole
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A V
Switching Energy 200µJ (on), 410µJ (off) µJ
Reverse Recovery Time (trr) 62ns ns
Thermal Resistance Junction-Case IGBT 0.53°C/W °C/W
Total Power Dissipation at TC = 25°C 283W W

Key Features

  • High speed switching series with minimized tail current
  • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
  • Tight parameter distribution for safer paralleling operation
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
  • Excellent switching performance thanks to the extra driving Kelvin pin
  • Lead-free package

Applications

  • Photovoltaic inverters
  • High frequency converters

Q & A

  1. What is the maximum collector-emitter voltage of the STGW40H65DFB-4 IGBT?

    The maximum collector-emitter voltage is 650V.

  2. What is the continuous collector current at 25°C for this IGBT?

    The continuous collector current at 25°C is 80A.

  3. What is the maximum junction temperature for the STGW40H65DFB-4?

    The maximum junction temperature is 175°C.

  4. What type of package does the STGW40H65DFB-4 come in?

    The device comes in a TO-247-4L package.

  5. What are the key applications for this IGBT?

    The key applications include photovoltaic inverters and high frequency converters.

  6. What is the significance of the Kelvin pin in this IGBT?

    The Kelvin pin separates the power path from the driving signal, enabling faster switching events.

  7. What is the thermal resistance junction-case for the IGBT?

    The thermal resistance junction-case for the IGBT is 0.53°C/W.

  8. What is the total power dissipation at 25°C for this device?

    The total power dissipation at 25°C is 283W.

  9. Does the STGW40H65DFB-4 have a lead-free package?

    Yes, the STGW40H65DFB-4 has a lead-free package.

  10. What is the reverse recovery time (trr) for this IGBT?

    The reverse recovery time (trr) is 62ns.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):160 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 40A
Power - Max:283 W
Switching Energy:200µJ (on), 410µJ (off)
Input Type:Standard
Gate Charge:210 nC
Td (on/off) @ 25°C:40ns/142ns
Test Condition:400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr):62 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-4
Supplier Device Package:TO-247-4
0 Remaining View Similar

In Stock

$5.30
40

Please send RFQ , we will respond immediately.

Similar Products

Part Number STGW40H65DFB-4 STGW60H65DFB-4 STGW80H65DFB-4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V
Current - Collector (Ic) (Max) 80 A 80 A 120 A
Current - Collector Pulsed (Icm) 160 A 240 A 240 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A 2V @ 15V, 60A 2V @ 15V, 80A
Power - Max 283 W 375 W 469 W
Switching Energy 200µJ (on), 410µJ (off) 346µJ (on), 1.161mJ (off) 2.1mJ (on), 1.5mJ (off)
Input Type Standard Standard Standard
Gate Charge 210 nC 306 nC 414 nC
Td (on/off) @ 25°C 40ns/142ns 65ns/261ns 84ns/280ns
Test Condition 400V, 40A, 5Ohm, 15V 400V, 60A, 10Ohm, 15V 400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr) 62 ns 60 ns 85 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-4 TO-247-4 TO-247-4
Supplier Device Package TO-247-4 TO-247-4 TO-247-4

Related Product By Categories

FGH40N60SMDF
FGH40N60SMDF
onsemi
IGBT FIELD STOP 600V 80A TO247-3
FGH60N60SMD-F085
FGH60N60SMD-F085
onsemi
IGBT 600V 120A 600W TO247
STGD7NC60HT4
STGD7NC60HT4
STMicroelectronics
IGBT 600V 25A 70W DPAK
STGP10NC60HD
STGP10NC60HD
STMicroelectronics
IGBT 600V 20A 65W TO220
STGW30NC60VD
STGW30NC60VD
STMicroelectronics
IGBT 600V 80A 250W TO247
NGTB25N120FL2WG
NGTB25N120FL2WG
onsemi
IGBT FIELD STOP 1200V 50A TO247
STGW30NC60KD
STGW30NC60KD
STMicroelectronics
IGBT 600V 60A 200W TO247
FGH75T65SQDT-F155
FGH75T65SQDT-F155
onsemi
650V 75A FS4 TRENCH IGBT
NGD18N45CLBT4G
NGD18N45CLBT4G
onsemi
INSULATED GATE BIPOLAR TRANSISTO
STGW45HF60WD
STGW45HF60WD
STMicroelectronics
IGBT 600V 70A 250W TO247
STGB10NB37LZ
STGB10NB37LZ
STMicroelectronics
IGBT 440V 20A 125W D2PAK
FGH40T65SQD-F155
FGH40T65SQD-F155
onsemi
IGBT TRENCH/FS 650V 80A TO247-3

Related Product By Brand

STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
STM32F407VGT6TR
STM32F407VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB