STGW40H65DFB-4
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STMicroelectronics STGW40H65DFB-4

Manufacturer No:
STGW40H65DFB-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT
Delivery:
Payment:
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Product Introduction

Overview

The STGW40H65DFB-4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the advanced HB series, utilizing a proprietary trench gate and field-stop structure. It is designed to optimize the balance between conduction and switching losses, making it highly efficient for various high-frequency applications. The IGBT features a maximum collector-emitter voltage of 650V and a continuous collector current of 80A at 25°C, with a maximum junction temperature of 175°C.

Key Specifications

Parameter Value Unit
Part Number STGW40H65DFB-4
Description IGBT Trench Field Stop
Operating Temperature -55°C to 175°C (TJ) °C
Current - Collector (Ic) (Max) 80A A
Current - Collector Pulsed (Icm) 160A A
Voltage - Collector Emitter Breakdown (Max) 650V V
Gate Charge 210nC nC
Package / Case TO-247-4L
Mounting Type Through Hole
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A V
Switching Energy 200µJ (on), 410µJ (off) µJ
Reverse Recovery Time (trr) 62ns ns
Thermal Resistance Junction-Case IGBT 0.53°C/W °C/W
Total Power Dissipation at TC = 25°C 283W W

Key Features

  • High speed switching series with minimized tail current
  • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
  • Tight parameter distribution for safer paralleling operation
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
  • Excellent switching performance thanks to the extra driving Kelvin pin
  • Lead-free package

Applications

  • Photovoltaic inverters
  • High frequency converters

Q & A

  1. What is the maximum collector-emitter voltage of the STGW40H65DFB-4 IGBT?

    The maximum collector-emitter voltage is 650V.

  2. What is the continuous collector current at 25°C for this IGBT?

    The continuous collector current at 25°C is 80A.

  3. What is the maximum junction temperature for the STGW40H65DFB-4?

    The maximum junction temperature is 175°C.

  4. What type of package does the STGW40H65DFB-4 come in?

    The device comes in a TO-247-4L package.

  5. What are the key applications for this IGBT?

    The key applications include photovoltaic inverters and high frequency converters.

  6. What is the significance of the Kelvin pin in this IGBT?

    The Kelvin pin separates the power path from the driving signal, enabling faster switching events.

  7. What is the thermal resistance junction-case for the IGBT?

    The thermal resistance junction-case for the IGBT is 0.53°C/W.

  8. What is the total power dissipation at 25°C for this device?

    The total power dissipation at 25°C is 283W.

  9. Does the STGW40H65DFB-4 have a lead-free package?

    Yes, the STGW40H65DFB-4 has a lead-free package.

  10. What is the reverse recovery time (trr) for this IGBT?

    The reverse recovery time (trr) is 62ns.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):160 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 40A
Power - Max:283 W
Switching Energy:200µJ (on), 410µJ (off)
Input Type:Standard
Gate Charge:210 nC
Td (on/off) @ 25°C:40ns/142ns
Test Condition:400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr):62 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-4
Supplier Device Package:TO-247-4
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Similar Products

Part Number STGW40H65DFB-4 STGW60H65DFB-4 STGW80H65DFB-4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V
Current - Collector (Ic) (Max) 80 A 80 A 120 A
Current - Collector Pulsed (Icm) 160 A 240 A 240 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A 2V @ 15V, 60A 2V @ 15V, 80A
Power - Max 283 W 375 W 469 W
Switching Energy 200µJ (on), 410µJ (off) 346µJ (on), 1.161mJ (off) 2.1mJ (on), 1.5mJ (off)
Input Type Standard Standard Standard
Gate Charge 210 nC 306 nC 414 nC
Td (on/off) @ 25°C 40ns/142ns 65ns/261ns 84ns/280ns
Test Condition 400V, 40A, 5Ohm, 15V 400V, 60A, 10Ohm, 15V 400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr) 62 ns 60 ns 85 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-4 TO-247-4 TO-247-4
Supplier Device Package TO-247-4 TO-247-4 TO-247-4

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