FGB40T65SPD-F085
  • Share:

onsemi FGB40T65SPD-F085

Manufacturer No:
FGB40T65SPD-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IGBT FIELD STOP 650V 80A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGB40T65SPD-F085 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device utilizes the novel field stop 3rd generation IGBT technology, offering optimal performance with both low conduction loss and switching loss. It is designed to operate in a wide range of applications requiring high current handling and efficient switching characteristics.

Key Specifications

ParameterValue
Continuous Collector Current at 25°C80 A
Maximum Collector-Emitter Voltage (Vce)650 V
Gate-Emitter Threshold Voltage (Vge(th))2 V
Power Dissipation (Pd)267 W
Minimum Operating Temperature-55°C
Maximum Operating Temperature150°C
Package TypeTO-263AB
Number of Pins3

Key Features

  • Field stop 3rd generation IGBT technology for low conduction and switching losses.
  • High current handling capability with a continuous collector current of 80 A at 25°C.
  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Wide operating temperature range from -55°C to 150°C.
  • Compact TO-263AB package with 3 pins.

Applications

The FGB40T65SPD-F085 IGBT is suitable for various high-power applications, including but not limited to:

  • Industrial power supplies and inverters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power inverters.
  • Automotive systems, particularly those requiring AEC-Q101 compliance.
  • Power factor correction (PFC) circuits.

Q & A

  1. What is the continuous collector current of the FGB40T65SPD-F085 at 25°C?
    The continuous collector current is 80 A at 25°C.
  2. What is the maximum collector-emitter voltage (Vce) of this IGBT?
    The maximum collector-emitter voltage is 650 V.
  3. What is the gate-emitter threshold voltage (Vge(th)) of this device?
    The gate-emitter threshold voltage is 2 V.
  4. What is the power dissipation (Pd) of the FGB40T65SPD-F085?
    The power dissipation is 267 W.
  5. What is the operating temperature range of this IGBT?
    The operating temperature range is from -55°C to 150°C.
  6. What type of package does the FGB40T65SPD-F085 come in?
    The device comes in a TO-263AB package.
  7. How many pins does the FGB40T65SPD-F085 have?
    The device has 3 pins.
  8. Is the FGB40T65SPD-F085 AEC-Q101 compliant?
  9. What are some common applications of the FGB40T65SPD-F085?
  10. What technology does the FGB40T65SPD-F085 use?

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 40A
Power - Max:267 W
Switching Energy:970µJ (on), 280µJ (off)
Input Type:Standard
Gate Charge:36 nC
Td (on/off) @ 25°C:18ns/35ns
Test Condition:400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr):34 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
0 Remaining View Similar

In Stock

$4.57
37

Please send RFQ , we will respond immediately.

Similar Products

Part Number FGB40T65SPD-F085 FGH40T65SPD-F085
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
IGBT Type Trench Field Stop NPT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 80 A 80 A
Current - Collector Pulsed (Icm) 120 A 120 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A 2.4V @ 15V, 40A
Power - Max 267 W 267 W
Switching Energy 970µJ (on), 280µJ (off) 1.16mJ (on), 270µJ (off)
Input Type Standard Standard
Gate Charge 36 nC 36 nC
Td (on/off) @ 25°C 18ns/35ns 18ns/35ns
Test Condition 400V, 40A, 6Ohm, 15V 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 34 ns -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-3
Supplier Device Package D²PAK (TO-263) TO-247

Related Product By Categories

FGH80N60FD2TU
FGH80N60FD2TU
onsemi
IGBT 600V 80A 290W TO247
STGB19NC60HDT4
STGB19NC60HDT4
STMicroelectronics
IGBT 600V 40A 130W D2PAK
STGF7NB60SL
STGF7NB60SL
STMicroelectronics
IGBT 600V 15A 25W TO220FP
NGTB15N120FL2WG
NGTB15N120FL2WG
onsemi
IGBT 1200V 15A SOLAR/UPS TO247
FGH50T65SQD-F155
FGH50T65SQD-F155
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
STGWA75M65DF2
STGWA75M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
FGHL75T65MQDTL4
FGHL75T65MQDTL4
onsemi
FS4 MID SPEED IGBT 650V 75A TO24
STGD18N40LZT4
STGD18N40LZT4
STMicroelectronics
IGBT 420V 25A 125W DPAK
FGAF20N60SMD
FGAF20N60SMD
onsemi
IGBT FIELD STOP 600V 40A TO3PF
FGY75T95SQDT
FGY75T95SQDT
onsemi
IGBT 950V 75A
NGD18N45CLBT4G
NGD18N45CLBT4G
onsemi
INSULATED GATE BIPOLAR TRANSISTO
FGH75T65SQDT_F155
FGH75T65SQDT_F155
onsemi
650V FS4 TRENCH IGBT

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK