FGB40T65SPD-F085
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onsemi FGB40T65SPD-F085

Manufacturer No:
FGB40T65SPD-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IGBT FIELD STOP 650V 80A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The FGB40T65SPD-F085 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device utilizes the novel field stop 3rd generation IGBT technology, offering optimal performance with both low conduction loss and switching loss. It is designed to operate in a wide range of applications requiring high current handling and efficient switching characteristics.

Key Specifications

ParameterValue
Continuous Collector Current at 25°C80 A
Maximum Collector-Emitter Voltage (Vce)650 V
Gate-Emitter Threshold Voltage (Vge(th))2 V
Power Dissipation (Pd)267 W
Minimum Operating Temperature-55°C
Maximum Operating Temperature150°C
Package TypeTO-263AB
Number of Pins3

Key Features

  • Field stop 3rd generation IGBT technology for low conduction and switching losses.
  • High current handling capability with a continuous collector current of 80 A at 25°C.
  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Wide operating temperature range from -55°C to 150°C.
  • Compact TO-263AB package with 3 pins.

Applications

The FGB40T65SPD-F085 IGBT is suitable for various high-power applications, including but not limited to:

  • Industrial power supplies and inverters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power inverters.
  • Automotive systems, particularly those requiring AEC-Q101 compliance.
  • Power factor correction (PFC) circuits.

Q & A

  1. What is the continuous collector current of the FGB40T65SPD-F085 at 25°C?
    The continuous collector current is 80 A at 25°C.
  2. What is the maximum collector-emitter voltage (Vce) of this IGBT?
    The maximum collector-emitter voltage is 650 V.
  3. What is the gate-emitter threshold voltage (Vge(th)) of this device?
    The gate-emitter threshold voltage is 2 V.
  4. What is the power dissipation (Pd) of the FGB40T65SPD-F085?
    The power dissipation is 267 W.
  5. What is the operating temperature range of this IGBT?
    The operating temperature range is from -55°C to 150°C.
  6. What type of package does the FGB40T65SPD-F085 come in?
    The device comes in a TO-263AB package.
  7. How many pins does the FGB40T65SPD-F085 have?
    The device has 3 pins.
  8. Is the FGB40T65SPD-F085 AEC-Q101 compliant?
  9. What are some common applications of the FGB40T65SPD-F085?
  10. What technology does the FGB40T65SPD-F085 use?

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 40A
Power - Max:267 W
Switching Energy:970µJ (on), 280µJ (off)
Input Type:Standard
Gate Charge:36 nC
Td (on/off) @ 25°C:18ns/35ns
Test Condition:400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr):34 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
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Similar Products

Part Number FGB40T65SPD-F085 FGH40T65SPD-F085
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
IGBT Type Trench Field Stop NPT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 80 A 80 A
Current - Collector Pulsed (Icm) 120 A 120 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A 2.4V @ 15V, 40A
Power - Max 267 W 267 W
Switching Energy 970µJ (on), 280µJ (off) 1.16mJ (on), 270µJ (off)
Input Type Standard Standard
Gate Charge 36 nC 36 nC
Td (on/off) @ 25°C 18ns/35ns 18ns/35ns
Test Condition 400V, 40A, 6Ohm, 15V 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 34 ns -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-3
Supplier Device Package D²PAK (TO-263) TO-247

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