FGB40T65SPD-F085
  • Share:

onsemi FGB40T65SPD-F085

Manufacturer No:
FGB40T65SPD-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IGBT FIELD STOP 650V 80A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGB40T65SPD-F085 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device utilizes the novel field stop 3rd generation IGBT technology, offering optimal performance with both low conduction loss and switching loss. It is designed to operate in a wide range of applications requiring high current handling and efficient switching characteristics.

Key Specifications

ParameterValue
Continuous Collector Current at 25°C80 A
Maximum Collector-Emitter Voltage (Vce)650 V
Gate-Emitter Threshold Voltage (Vge(th))2 V
Power Dissipation (Pd)267 W
Minimum Operating Temperature-55°C
Maximum Operating Temperature150°C
Package TypeTO-263AB
Number of Pins3

Key Features

  • Field stop 3rd generation IGBT technology for low conduction and switching losses.
  • High current handling capability with a continuous collector current of 80 A at 25°C.
  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Wide operating temperature range from -55°C to 150°C.
  • Compact TO-263AB package with 3 pins.

Applications

The FGB40T65SPD-F085 IGBT is suitable for various high-power applications, including but not limited to:

  • Industrial power supplies and inverters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power inverters.
  • Automotive systems, particularly those requiring AEC-Q101 compliance.
  • Power factor correction (PFC) circuits.

Q & A

  1. What is the continuous collector current of the FGB40T65SPD-F085 at 25°C?
    The continuous collector current is 80 A at 25°C.
  2. What is the maximum collector-emitter voltage (Vce) of this IGBT?
    The maximum collector-emitter voltage is 650 V.
  3. What is the gate-emitter threshold voltage (Vge(th)) of this device?
    The gate-emitter threshold voltage is 2 V.
  4. What is the power dissipation (Pd) of the FGB40T65SPD-F085?
    The power dissipation is 267 W.
  5. What is the operating temperature range of this IGBT?
    The operating temperature range is from -55°C to 150°C.
  6. What type of package does the FGB40T65SPD-F085 come in?
    The device comes in a TO-263AB package.
  7. How many pins does the FGB40T65SPD-F085 have?
    The device has 3 pins.
  8. Is the FGB40T65SPD-F085 AEC-Q101 compliant?
  9. What are some common applications of the FGB40T65SPD-F085?
  10. What technology does the FGB40T65SPD-F085 use?

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 40A
Power - Max:267 W
Switching Energy:970µJ (on), 280µJ (off)
Input Type:Standard
Gate Charge:36 nC
Td (on/off) @ 25°C:18ns/35ns
Test Condition:400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr):34 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
0 Remaining View Similar

In Stock

$4.57
37

Please send RFQ , we will respond immediately.

Similar Products

Part Number FGB40T65SPD-F085 FGH40T65SPD-F085
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
IGBT Type Trench Field Stop NPT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 80 A 80 A
Current - Collector Pulsed (Icm) 120 A 120 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A 2.4V @ 15V, 40A
Power - Max 267 W 267 W
Switching Energy 970µJ (on), 280µJ (off) 1.16mJ (on), 270µJ (off)
Input Type Standard Standard
Gate Charge 36 nC 36 nC
Td (on/off) @ 25°C 18ns/35ns 18ns/35ns
Test Condition 400V, 40A, 6Ohm, 15V 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 34 ns -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-3
Supplier Device Package D²PAK (TO-263) TO-247

Related Product By Categories

FGH75T65SHD-F155
FGH75T65SHD-F155
onsemi
IGBT TRENCH/FS 650V 150A TO247
FGA40T65SHDF
FGA40T65SHDF
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
FGB3245G2-F085C
FGB3245G2-F085C
onsemi
IGNITION IGBT, 450V, 23A, 1.3V,
STGF20M65DF2
STGF20M65DF2
STMicroelectronics
IGBT TRENCH 650V 40A TO220FP
NGTB50N120FL2WG
NGTB50N120FL2WG
onsemi
IGBT 1200V 100A 535W TO247
STGB6NC60HDT4
STGB6NC60HDT4
STMicroelectronics
IGBT 600V 15A 56W D2PAK
FGH50T65SQD-F155
FGH50T65SQD-F155
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
FGA6560WDF
FGA6560WDF
onsemi
IGBT TRENCH/FS 650V 120A TO3PN
FGH40N60SFDTU-F085
FGH40N60SFDTU-F085
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
FGA6065ADF
FGA6065ADF
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
IKW75N60TXK
IKW75N60TXK
Infineon Technologies
IKW75N60 - DISCRETE IGBT WITH AN
STGFW40V60DF
STGFW40V60DF
STMicroelectronics
IGBT 600V 80A 62.5W TO-3PF

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN