FGB3245G2-F085C
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onsemi FGB3245G2-F085C

Manufacturer No:
FGB3245G2-F085C
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IGNITION IGBT, 450V, 23A, 1.3V,
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGB3245G2-F085C is an N-channel Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, designed using the ECOSPARK®2 technology. This component is optimized for high-performance applications, particularly in ignition systems and other high-energy pulse applications. It is known for its robust design and the ability to eliminate the need for external protection circuitry, making it a reliable choice for various industrial and automotive uses.

Key Specifications

ParameterValue
Collector-Emitter Voltage (VCEO)450 V
Collector-Emitter Saturation Voltage (VCE(sat))1.13 V
Maximum Gate Emitter Voltage-10 V, 10 V
Continuous Collector Current (IC)23 A
Pulse Energy Capability320 mJ
Package TypeSurface Mount TO-263 (D2PAK)

Key Features

  • Designed with ECOSPARK®2 technology to enhance performance and reliability.
  • No need for external protection circuitry, simplifying the design process.
  • High pulse energy capability of 320 mJ.
  • Low collector-emitter saturation voltage of 1.13 V.
  • Surface mount TO-263 (D2PAK) package for easy integration.

Applications

The FGB3245G2-F085C IGBT is primarily used in high-energy pulse applications such as ignition systems, automotive systems, and various industrial power electronics. Its robust design and high reliability make it suitable for demanding environments.

Q & A

  1. What is the maximum collector-emitter voltage of the FGB3245G2-F085C?
    The maximum collector-emitter voltage is 450 V.
  2. What is the collector-emitter saturation voltage of this IGBT?
    The collector-emitter saturation voltage is 1.13 V.
  3. What is the maximum gate emitter voltage for this component?
    The maximum gate emitter voltage is -10 V to 10 V.
  4. What is the continuous collector current rating of the FGB3245G2-F085C?
    The continuous collector current is 23 A.
  5. What is the pulse energy capability of this IGBT?
    The pulse energy capability is 320 mJ.
  6. In what package is the FGB3245G2-F085C available?
    The component is available in a surface mount TO-263 (D2PAK) package.
  7. What technology is used in the design of this IGBT?
    The IGBT is designed using onsemi's ECOSPARK®2 technology.
  8. Does the FGB3245G2-F085C require external protection circuitry?
    No, it does not require external protection circuitry.
  9. What are the primary applications of the FGB3245G2-F085C?
    The primary applications include ignition systems, automotive systems, and industrial power electronics.
  10. Where can I find detailed specifications and datasheets for the FGB3245G2-F085C?
    Detailed specifications and datasheets can be found on the onsemi official website, as well as on distributor websites like Mouser and Digi-Key.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):450 V
Current - Collector (Ic) (Max):41 A
Current - Collector Pulsed (Icm):- 
Vce(on) (Max) @ Vge, Ic:1.25V @ 4V, 6A
Power - Max:150 W
Switching Energy:- 
Input Type:Logic
Gate Charge:23 nC
Td (on/off) @ 25°C:900ns/5.4µs
Test Condition:300V, 6.5A, 1kOhm, 5V
Reverse Recovery Time (trr):2.6 µs
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263 (D2Pak)
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