Overview
The STGB15M65DF2 is an Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics using an advanced proprietary trench gate field-stop structure. This device is part of the M series of IGBTs, which are designed to optimize performance for inverter systems, particularly where low loss and short-circuit capability are crucial. The STGB15M65DF2 offers a balance of efficiency and safety, making it suitable for various industrial applications.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCE) | 650 V |
| Collector Current (IC) | 15 A |
| Power Dissipation | 136 W |
| Package Type | D2PAK |
| Gate-Emitter Voltage (VGE) | ±20 V |
| Pulsed Collector Current | 60 A |
| Gate Charge | 45 nC |
| VCE(sat) | 1.55 V (typ.) @ IC = 15 A |
| Short-Circuit Withstand Time | 6 µs |
Key Features
- Advanced proprietary trench gate field-stop structure
- Low loss and high efficiency
- Tight parameter distribution for safer paralleling operation
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Integrated anti-parallel diode
Applications
The STGB15M65DF2 is recommended for industrial applications, particularly in inverter systems where low loss and high reliability are essential. These include but are not limited to motor drives, power supplies, and other high-power electronic systems.
Q & A
- What is the collector-emitter voltage of the STGB15M65DF2? The collector-emitter voltage is 650 V.
- What is the maximum collector current of the STGB15M65DF2? The maximum collector current is 15 A.
- What type of package does the STGB15M65DF2 come in? The STGB15M65DF2 comes in a D2PAK package.
- What is the gate-emitter voltage range for the STGB15M65DF2? The gate-emitter voltage range is ±20 V.
- What is the pulsed collector current of the STGB15M65DF2? The pulsed collector current is 60 A.
- What is the short-circuit withstand time of the STGB15M65DF2? The short-circuit withstand time is 6 µs.
- Does the STGB15M65DF2 have an integrated anti-parallel diode? Yes, it does have an integrated anti-parallel diode.
- What is the typical VCE(sat) at 15 A collector current? The typical VCE(sat) is 1.55 V at 15 A collector current.
- What are the key benefits of the trench gate field-stop structure in the STGB15M65DF2? The key benefits include low loss, high efficiency, and safer paralleling operation due to tight parameter distribution and a positive VCE(sat) temperature coefficient.
- In which applications is the STGB15M65DF2 typically used? The STGB15M65DF2 is typically used in industrial applications such as motor drives and power supplies.
