STGB30M65DF2
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STMicroelectronics STGB30M65DF2

Manufacturer No:
STGB30M65DF2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IGBT 650V 30A D2PAK
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STGB30M65DF2 is a Trench gate field-stop IGBT developed by STMicroelectronics, utilizing an advanced proprietary trench gate field-stop structure. This device is part of the M series IGBTs, which are designed to offer an optimal balance between inverter system performance and efficiency. It is particularly suited for applications requiring low-loss and short-circuit functionality. The IGBT features a positive VCE(sat) temperature coefficient and tight parameter distribution, ensuring safer paralleling operations.

Key Specifications

Parameter Value Unit
Collector-emitter voltage (VCES) 650 V
Continuous collector current at TC = 25 °C 60 A
Continuous collector current at TC = 100 °C 30 A
Pulsed collector current 120 A
Gate-emitter voltage (VGE) ±20 V
Collector-emitter saturation voltage (VCE(sat)) at IC = 30 A, VGE = 15 V 1.55 V
Total dissipation at TC = 25 °C 258 W
Thermal resistance junction-case (RthJC) for IGBT 0.58 °C/W
Thermal resistance junction-ambient (RthJA) 62.5 °C/W
Package type D²PAK (TO-263)
Gate charge (Qg) 80 nC

Key Features

  • Advanced proprietary trench gate field-stop structure
  • Low thermal resistance
  • Short-circuit withstand time of 6 µs
  • Tight parameters distribution for safer paralleling
  • Soft and very fast recovery antiparallel diode
  • Positive VCE(sat) temperature coefficient
  • Integrated anti-parallel diode

Applications

  • Motor control
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC)

Q & A

  1. What is the collector-emitter voltage rating of the STGB30M65DF2?

    The collector-emitter voltage (VCES) rating is 650 V.

  2. What is the continuous collector current at 25 °C and 100 °C?

    The continuous collector current is 60 A at 25 °C and 30 A at 100 °C.

  3. What is the pulsed collector current rating?

    The pulsed collector current rating is 120 A.

  4. What is the gate-emitter voltage range?

    The gate-emitter voltage (VGE) range is ±20 V.

  5. What is the typical collector-emitter saturation voltage (VCE(sat))?

    The typical VCE(sat) is 1.55 V at IC = 30 A and VGE = 15 V.

  6. What is the total dissipation at 25 °C?

    The total dissipation at 25 °C is 258 W.

  7. What is the thermal resistance junction-case (RthJC) for the IGBT?

    The thermal resistance junction-case (RthJC) for the IGBT is 0.58 °C/W.

  8. What type of package does the STGB30M65DF2 come in?

    The STGB30M65DF2 comes in a D²PAK (TO-263) package.

  9. What is the gate charge (Qg) of the STGB30M65DF2?

    The gate charge (Qg) is 80 nC.

  10. What are some common applications for the STGB30M65DF2?

    Common applications include motor control, UPS, and PFC.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 30A
Power - Max:258 W
Switching Energy:300µJ (on), 960µJ (off)
Input Type:Standard
Gate Charge:80 nC
Td (on/off) @ 25°C:31.6ns/115ns
Test Condition:400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):140 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
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Similar Products

Part Number STGB30M65DF2 STGF30M65DF2 STGB10M65DF2 STGB20M65DF2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V 650 V
Current - Collector (Ic) (Max) 60 A 60 A 20 A 40 A
Current - Collector Pulsed (Icm) 120 A 120 A 40 A 80 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A 2V @ 15V, 30A 2V @ 15V, 10A 2V @ 15V, 20A
Power - Max 258 W 38 W 115 W 166 W
Switching Energy 300µJ (on), 960µJ (off) 300µJ (on), 960µJ (off) 120µJ (on), 270µJ (off) 140µJ (on), 560µJ (off)
Input Type Standard Standard Standard Standard
Gate Charge 80 nC 80 nC 28 nC 63 nC
Td (on/off) @ 25°C 31.6ns/115ns 31.6ns/115ns 19ns/91ns 26ns/108ns
Test Condition 400V, 30A, 10Ohm, 15V 400V, 30A, 10Ohm, 15V 400V, 10A, 22Ohm, 15V 400V, 20A, 12Ohm, 15V
Reverse Recovery Time (trr) 140 ns 140 ns 96 ns 166 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 Full Pack TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263) TO-220FP D²PAK (TO-263) D2PAK

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