Overview
The STGB30M65DF2 is a Trench gate field-stop IGBT developed by STMicroelectronics, utilizing an advanced proprietary trench gate field-stop structure. This device is part of the M series IGBTs, which are designed to offer an optimal balance between inverter system performance and efficiency. It is particularly suited for applications requiring low-loss and short-circuit functionality. The IGBT features a positive VCE(sat) temperature coefficient and tight parameter distribution, ensuring safer paralleling operations.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Collector-emitter voltage (VCES) | 650 | V |
Continuous collector current at TC = 25 °C | 60 | A |
Continuous collector current at TC = 100 °C | 30 | A |
Pulsed collector current | 120 | A |
Gate-emitter voltage (VGE) | ±20 | V |
Collector-emitter saturation voltage (VCE(sat)) at IC = 30 A, VGE = 15 V | 1.55 | V |
Total dissipation at TC = 25 °C | 258 | W |
Thermal resistance junction-case (RthJC) for IGBT | 0.58 | °C/W |
Thermal resistance junction-ambient (RthJA) | 62.5 | °C/W |
Package type | D²PAK (TO-263) | |
Gate charge (Qg) | 80 | nC |
Key Features
- Advanced proprietary trench gate field-stop structure
- Low thermal resistance
- Short-circuit withstand time of 6 µs
- Tight parameters distribution for safer paralleling
- Soft and very fast recovery antiparallel diode
- Positive VCE(sat) temperature coefficient
- Integrated anti-parallel diode
Applications
- Motor control
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC)
Q & A
- What is the collector-emitter voltage rating of the STGB30M65DF2?
The collector-emitter voltage (VCES) rating is 650 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 60 A at 25 °C and 30 A at 100 °C.
- What is the pulsed collector current rating?
The pulsed collector current rating is 120 A.
- What is the gate-emitter voltage range?
The gate-emitter voltage (VGE) range is ±20 V.
- What is the typical collector-emitter saturation voltage (VCE(sat))?
The typical VCE(sat) is 1.55 V at IC = 30 A and VGE = 15 V.
- What is the total dissipation at 25 °C?
The total dissipation at 25 °C is 258 W.
- What is the thermal resistance junction-case (RthJC) for the IGBT?
The thermal resistance junction-case (RthJC) for the IGBT is 0.58 °C/W.
- What type of package does the STGB30M65DF2 come in?
The STGB30M65DF2 comes in a D²PAK (TO-263) package.
- What is the gate charge (Qg) of the STGB30M65DF2?
The gate charge (Qg) is 80 nC.
- What are some common applications for the STGB30M65DF2?
Common applications include motor control, UPS, and PFC.