NGTB40N65IHRTG
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onsemi NGTB40N65IHRTG

Manufacturer No:
NGTB40N65IHRTG
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 650V 40A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NGTB40N65IHRTG is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, featuring a robust and cost-effective Field Stop (FS2) trench construction with a monolithic Reverse Conducting (RC) Diode. This device is optimized for low conduction losses and is well-suited for resonant or soft switching applications. It offers a single die solution that is reliable and cost-effective, making it an ideal choice for various high-power applications.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCES 650 V
Collector current @ TC = 25°C IC 80 A
Collector current @ TC = 100°C IC 40 A
Pulsed collector current ICM 160 A
Diode forward current @ TC = 25°C IF 80 A
Diode forward current @ TC = 100°C IF 40 A
Diode pulsed current IFM 160 A
Power Dissipation @ TC = 25°C PD 405 W
Power Dissipation @ TC = 100°C PD 202 W
Operating junction temperature range TJ -40 to +175 °C
Storage temperature range Tstg -55 to +175 °C
Lead temperature for soldering TSLD 260 °C
Collector-emitter saturation voltage @ TJ = 25°C VCEsat 1.55 V
Gate-emitter threshold voltage VGE(th) 4.5 - 6.5 V
Turn-off delay time @ TJ = 25°C td(off) 197 ns
Turn-off switching loss @ TJ = 25°C Eoff 0.42 mJ

Key Features

  • Extremely efficient trench with Fieldstop technology
  • Low conduction design for soft switching applications
  • Reduced power dissipation in inductive heating applications
  • Reliable and cost-effective single die solution
  • Pb-free device

Applications

  • Inductive heating
  • Air conditioning PFC (Power Factor Correction)
  • Welding

Q & A

  1. What is the collector-emitter voltage rating of the NGTB40N65IHRTG IGBT?

    The collector-emitter voltage rating is 650 V.

  2. What is the maximum collector current at 25°C and 100°C?

    The maximum collector current is 80 A at 25°C and 40 A at 100°C.

  3. What is the pulsed collector current rating?

    The pulsed collector current rating is 160 A.

  4. What is the operating junction temperature range?

    The operating junction temperature range is -40°C to +175°C.

  5. What is the storage temperature range?

    The storage temperature range is -55°C to +175°C.

  6. What is the lead temperature for soldering?

    The lead temperature for soldering is 260°C.

  7. What is the collector-emitter saturation voltage at 25°C?

    The collector-emitter saturation voltage at 25°C is 1.55 V.

  8. What are the typical applications of the NGTB40N65IHRTG IGBT?

    Typical applications include inductive heating, air conditioning PFC, and welding.

  9. Is the NGTB40N65IHRTG IGBT Pb-free?
  10. What is the turn-off delay time at 25°C?

    The turn-off delay time at 25°C is 197 ns.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):- 
Vce(on) (Max) @ Vge, Ic:- 
Power - Max:- 
Switching Energy:- 
Input Type:- 
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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In Stock

$2.86
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Similar Products

Part Number NGTB40N65IHRTG NGTB40N65IHRWG
Manufacturer onsemi onsemi
Product Status Active Obsolete
IGBT Type - Field Stop
Voltage - Collector Emitter Breakdown (Max) - 650 V
Current - Collector (Ic) (Max) - 80 A
Current - Collector Pulsed (Icm) - 160 A
Vce(on) (Max) @ Vge, Ic - 1.7V @ 15V, 40A
Power - Max - 405 W
Switching Energy - 420µJ (off)
Input Type - Standard
Gate Charge - 190 nC
Td (on/off) @ 25°C - -
Test Condition - 400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature - -40°C ~ 175°C (TJ)
Mounting Type - Through Hole
Package / Case - TO-247-3
Supplier Device Package - TO-247-3

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