FGA20N120FTDTU
  • Share:

onsemi FGA20N120FTDTU

Manufacturer No:
FGA20N120FTDTU
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 1200V 40A 298W TO3PN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGA20N120FTDTU is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, formerly known as Fairchild Semiconductor. This component is designed for high-power applications and is characterized by its high voltage and current handling capabilities. Although the product is currently obsolete and not in production, it remains relevant for existing designs and maintenance purposes.

Key Specifications

ParameterValue
Voltage Rating (Vce)1200 V
Continuous Current (Ic)40 A
Pulse Current (Icm)80 A
Power Dissipation (Pd)298 W
Package TypeThrough Hole TO-3P
Switching FrequencyUp to 20 kHz

Key Features

  • Trench Field Stop technology for improved performance and reliability.
  • High voltage rating of 1200 V and continuous current of 40 A.
  • High power dissipation capability of 298 W.
  • Through Hole TO-3P package for robust and reliable mounting.
  • Suitable for high-frequency switching applications up to 20 kHz.

Applications

The FGA20N120FTDTU IGBT is suitable for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial power electronics and automation systems.

Q & A

  1. What is the voltage rating of the FGA20N120FTDTU IGBT?
    The voltage rating of the FGA20N120FTDTU IGBT is 1200 V.
  2. What is the continuous current rating of the FGA20N120FTDTU?
    The continuous current rating is 40 A.
  3. What is the package type of the FGA20N120FTDTU?
    The package type is Through Hole TO-3P.
  4. Is the FGA20N120FTDTU still in production?
    No, the FGA20N120FTDTU is obsolete and not in production.
  5. What are the typical applications for the FGA20N120FTDTU?
    Typical applications include power supplies, motor drives, renewable energy systems, and industrial power electronics.
  6. What is the power dissipation capability of the FGA20N120FTDTU?
    The power dissipation capability is 298 W.
  7. What technology is used in the FGA20N120FTDTU IGBT?
    The FGA20N120FTDTU uses Trench Field Stop technology.
  8. What is the maximum switching frequency for the FGA20N120FTDTU?
    The maximum switching frequency is up to 20 kHz.
  9. Where can I find detailed specifications for the FGA20N120FTDTU?
    Detailed specifications can be found in the datasheet available from onsemi or other electronic component distributors.
  10. What kind of support services are available for the FGA20N120FTDTU?
    Support services may include product usage guidance, repair, and return policies from distributors like Depu Electronics.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):40 A
Current - Collector Pulsed (Icm):60 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 20A
Power - Max:298 W
Switching Energy:- 
Input Type:Standard
Gate Charge:137 nC
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):447 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P
0 Remaining View Similar

In Stock

$4.57
196

Please send RFQ , we will respond immediately.

Similar Products

Part Number FGA20N120FTDTU FGA30N120FTDTU
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 40 A 60 A
Current - Collector Pulsed (Icm) 60 A 90 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A 2V @ 15V, 30A
Power - Max 298 W 339 W
Switching Energy - -
Input Type Standard Standard
Gate Charge 137 nC 208 nC
Td (on/off) @ 25°C - -
Test Condition - -
Reverse Recovery Time (trr) 447 ns 730 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Supplier Device Package TO-3P TO-3PN

Related Product By Categories

STGWA40HP65FB2
STGWA40HP65FB2
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 4
STGW40H65DFB-4
STGW40H65DFB-4
STMicroelectronics
IGBT
FGH60T65SHD-F155
FGH60T65SHD-F155
onsemi
IGBT TRENCH/FS 650V 120A TO247
STGWA50IH65DF
STGWA50IH65DF
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT 650
STGW40NC60KD
STGW40NC60KD
STMicroelectronics
IGBT 600V 70A 250W TO247
FGH40N60SMD-F085
FGH40N60SMD-F085
onsemi
IGBT 600V 80A 349W TO-247-3
NGTB40N120FL3WG
NGTB40N120FL3WG
onsemi
IGBT 1200V 160A TO247
STGB7NC60HDT4
STGB7NC60HDT4
STMicroelectronics
IGBT 600V 25A 80W D2PAK
STGYA120M65DF2
STGYA120M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
FGAF20S65AQ
FGAF20S65AQ
onsemi
IGBT 650V 20A TO-3PF
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
IKW50N60TAFKSA1
IKW50N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK