FGA20N120FTDTU
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onsemi FGA20N120FTDTU

Manufacturer No:
FGA20N120FTDTU
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 1200V 40A 298W TO3PN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGA20N120FTDTU is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, formerly known as Fairchild Semiconductor. This component is designed for high-power applications and is characterized by its high voltage and current handling capabilities. Although the product is currently obsolete and not in production, it remains relevant for existing designs and maintenance purposes.

Key Specifications

ParameterValue
Voltage Rating (Vce)1200 V
Continuous Current (Ic)40 A
Pulse Current (Icm)80 A
Power Dissipation (Pd)298 W
Package TypeThrough Hole TO-3P
Switching FrequencyUp to 20 kHz

Key Features

  • Trench Field Stop technology for improved performance and reliability.
  • High voltage rating of 1200 V and continuous current of 40 A.
  • High power dissipation capability of 298 W.
  • Through Hole TO-3P package for robust and reliable mounting.
  • Suitable for high-frequency switching applications up to 20 kHz.

Applications

The FGA20N120FTDTU IGBT is suitable for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial power electronics and automation systems.

Q & A

  1. What is the voltage rating of the FGA20N120FTDTU IGBT?
    The voltage rating of the FGA20N120FTDTU IGBT is 1200 V.
  2. What is the continuous current rating of the FGA20N120FTDTU?
    The continuous current rating is 40 A.
  3. What is the package type of the FGA20N120FTDTU?
    The package type is Through Hole TO-3P.
  4. Is the FGA20N120FTDTU still in production?
    No, the FGA20N120FTDTU is obsolete and not in production.
  5. What are the typical applications for the FGA20N120FTDTU?
    Typical applications include power supplies, motor drives, renewable energy systems, and industrial power electronics.
  6. What is the power dissipation capability of the FGA20N120FTDTU?
    The power dissipation capability is 298 W.
  7. What technology is used in the FGA20N120FTDTU IGBT?
    The FGA20N120FTDTU uses Trench Field Stop technology.
  8. What is the maximum switching frequency for the FGA20N120FTDTU?
    The maximum switching frequency is up to 20 kHz.
  9. Where can I find detailed specifications for the FGA20N120FTDTU?
    Detailed specifications can be found in the datasheet available from onsemi or other electronic component distributors.
  10. What kind of support services are available for the FGA20N120FTDTU?
    Support services may include product usage guidance, repair, and return policies from distributors like Depu Electronics.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):40 A
Current - Collector Pulsed (Icm):60 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 20A
Power - Max:298 W
Switching Energy:- 
Input Type:Standard
Gate Charge:137 nC
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):447 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P
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Similar Products

Part Number FGA20N120FTDTU FGA30N120FTDTU
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 40 A 60 A
Current - Collector Pulsed (Icm) 60 A 90 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A 2V @ 15V, 30A
Power - Max 298 W 339 W
Switching Energy - -
Input Type Standard Standard
Gate Charge 137 nC 208 nC
Td (on/off) @ 25°C - -
Test Condition - -
Reverse Recovery Time (trr) 447 ns 730 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Supplier Device Package TO-3P TO-3PN

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