STGB20NC60VT4
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STMicroelectronics STGB20NC60VT4

Manufacturer No:
STGB20NC60VT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IGBT 600V 60A 200W D2PAK
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The STGB20NC60VT4, produced by STMicroelectronics, is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for various high-frequency and high-power applications. This device utilizes the advanced PowerMESH™ process, offering an excellent trade-off between switching performance and low on-state behavior. Available in D²PAK, TO-220, and TO-247 packages, it caters to different design requirements and environmental compliance standards through ECOPACK® packaging.

Key Specifications

Parameter Value Unit
Collector-emitter voltage (VGE = 0) 600 V
Collector current (continuous) at 25 °C 60 A
Collector current (continuous) at 100 °C 30 A
Pulsed collector current 100 A
Gate-emitter voltage ± 20 V
Total dissipation at TC = 25 °C 200 W
Operating junction temperature – 55 to 150 °C
Collector-emitter saturation voltage (VGE=15 V, IC= 20 A) 1.7 - 2.5 V
Gate threshold voltage 3.75 - 5.75 V
Turn-on delay time (VCC = 390 V, IC = 20 A, RG= 3.3 Ω, VGE= 15 V) 31 ns
Current rise time (VCC = 390 V, IC = 20 A, RG= 3.3 Ω, VGE= 15 V) 11 ns

Key Features

  • High frequency operation up to 50 kHz
  • Lower CRES / CIES ratio, reducing cross-conduction susceptibility
  • High current capability with continuous collector current up to 60 A at 25 °C
  • Advanced PowerMESH™ process for excellent switching performance and low on-state behavior
  • Available in D²PAK, TO-220, and TO-247 packages
  • ECOPACK® packaging for environmental compliance

Applications

  • High frequency inverters
  • Uninterruptible Power Supplies (UPS)
  • Motor drivers
  • High Frequency (HF) Switch-Mode Power Supplies (SMPS) and Power Factor Correction (PFC) in both hard switch and resonant topologies

Q & A

  1. What is the maximum collector-emitter voltage of the STGB20NC60VT4?

    The maximum collector-emitter voltage is 600 V.

  2. What are the continuous collector current ratings at 25 °C and 100 °C?

    The continuous collector current is 60 A at 25 °C and 30 A at 100 °C.

  3. What is the pulsed collector current rating?

    The pulsed collector current is 100 A.

  4. What is the gate-emitter voltage range?

    The gate-emitter voltage range is ± 20 V.

  5. What is the total dissipation at TC = 25 °C?

    The total dissipation at TC = 25 °C is 200 W.

  6. What is the operating junction temperature range?

    The operating junction temperature range is – 55 to 150 °C.

  7. What are the typical and maximum collector-emitter saturation voltages?

    The typical collector-emitter saturation voltage is 1.7 V, and the maximum is 2.5 V at VGE=15 V, IC= 20 A.

  8. What is the turn-on delay time under specified conditions?

    The turn-on delay time is approximately 31 ns under the conditions VCC = 390 V, IC = 20 A, RG= 3.3 Ω, VGE= 15 V.

  9. What are the common applications of the STGB20NC60VT4?

    Common applications include high frequency inverters, UPS, motor drivers, and HF SMPS and PFC in both hard switch and resonant topologies.

  10. What packaging options are available for the STGB20NC60VT4?

    The device is available in D²PAK, TO-220, and TO-247 packages.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):100 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 20A
Power - Max:200 W
Switching Energy:220µJ (on), 330µJ (off)
Input Type:Standard
Gate Charge:100 nC
Td (on/off) @ 25°C:31ns/100ns
Test Condition:390V, 20A, 3.3Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
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