Overview
The NGTB25N120FLWG is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device features a robust and cost-effective Trench construction, providing superior performance in demanding switching applications. It is designed to offer low on-state voltage and minimal switching loss, making it suitable for high-efficiency power conversion systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | VCES | 1200 | V |
| Collector current @ TC = 25°C | IC | 50 | A |
| Collector current @ TC = 100°C | IC | 25 | A |
| Pulsed collector current, Tpulse limited by TJmax | ICM | 200 | A |
| Gate-emitter voltage | VGE | ±20 | V |
| Power Dissipation @ TC = 25°C | PD | 192 | W |
| Power Dissipation @ TC = 100°C | PD | 77 | W |
| Short Circuit Withstand Time | TSC | 10 | μs |
| Operating junction temperature range | TJ | -55 to +150 | °C |
| Storage temperature range | Tstg | -55 to +150 | °C |
| Thermal resistance junction-to-case, for IGBT | RJC | 0.65 | °C/W |
| Thermal resistance junction-to-case, for Diode | RJC | 1.5 | °C/W |
| Thermal resistance junction-to-ambient | RJA | 40 | °C/W |
| Collector-emitter saturation voltage | VCEsat | 1.55 - 2.2 | V |
| Gate-emitter threshold voltage | VGE(th) | 4.5 - 6.5 | V |
| Gate charge total | Qg | 220 | nC |
Key Features
- Low Saturation Voltage using Trench with Field Stop Technology
- Low Switching Loss Reduces System Power Dissipation
- 10 μs Short Circuit Capability
- Low Gate Charge
- Soft, Fast Free Wheeling Diode
- Pb-Free Devices
Applications
- Solar Inverter
- UPS Inverter
Q & A
- What is the collector-emitter voltage rating of the NGTB25N120FLWG IGBT?
The collector-emitter voltage rating is 1200 V.
- What is the maximum collector current at 25°C and 100°C?
The maximum collector current is 50 A at 25°C and 25 A at 100°C.
- What is the short circuit withstand time of the IGBT?
The short circuit withstand time is 10 μs.
- What is the operating junction temperature range of the device?
The operating junction temperature range is -55°C to +150°C.
- What type of construction does the NGTB25N120FLWG IGBT use?
The IGBT uses a robust and cost-effective Trench construction.
- Does the NGTB25N120FLWG come with a free wheeling diode?
Yes, it incorporates a soft and fast co-packaged free wheeling diode.
- What are the typical applications of the NGTB25N120FLWG IGBT?
The typical applications include Solar Inverter and UPS Inverter.
- What is the thermal resistance junction-to-case for the IGBT and the diode?
The thermal resistance junction-to-case is 0.65 °C/W for the IGBT and 1.5 °C/W for the diode.
- What is the gate-emitter threshold voltage range of the NGTB25N120FLWG?
The gate-emitter threshold voltage range is 4.5 V to 6.5 V.
- Is the NGTB25N120FLWG Pb-Free?
Yes, the NGTB25N120FLWG is a Pb-Free device.
