Overview
The NGTB25N120FL3WG is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, featuring a robust and cost-effective Ultra Field Stop Trench construction. This device is designed to provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. It is well-suited for applications requiring high efficiency and reliability.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter Voltage | VCES | 1200 | V |
| Collector Current @ TC = 25°C | IC | 50 | A |
| Collector Current @ TC = 100°C | IC | 25 | A |
| Pulsed Collector Current, Tpulse Limited by TJmax | ICM | 100 | A |
| Diode Forward Current @ TC = 25°C | IF | 50 | A |
| Diode Forward Current @ TC = 100°C | IF | 25 | A |
| Diode Pulsed Current, Tpulse Limited by TJmax | IFM | 100 | A |
| Gate-emitter Voltage | VGE | ±20 | V |
| Transient Gate-emitter Voltage (Tpulse = 5 μs, D < 0.10) | VGE | ±30 | V |
| Power Dissipation @ TC = 25°C | PD | 349 | W |
| Power Dissipation @ TC = 100°C | PD | 174 | W |
| Operating Junction Temperature Range | TJ | -55 to +175 | °C |
| Storage Temperature Range | Tstg | -55 to +175 | °C |
| Lead temperature for soldering, 1/8″ from case for 5 seconds | TSLD | 260 | °C |
| Thermal resistance junction-to-case, for IGBT | RJC | 0.43 | °C/W |
| Thermal resistance junction-to-case, for Diode | RJC | 0.78 | °C/W |
| Thermal resistance junction-to-ambient | RJA | 40 | °C/W |
Key Features
- Extremely Efficient Trench with Field Stop Technology
- Maximum Junction Temperature (TJmax) of 175°C
- Soft and Fast Reverse Recovery Diode with low forward voltage
- Optimized for High Speed Switching
- Pb-Free Devices
Applications
- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Welding
Q & A
- What is the maximum collector-emitter voltage of the NGTB25N120FL3WG IGBT?
The maximum collector-emitter voltage (VCES) is 1200 V.
- What is the maximum collector current at 25°C and 100°C?
The maximum collector current at 25°C is 50 A, and at 100°C it is 25 A.
- What is the thermal resistance junction-to-case for the IGBT and the diode?
The thermal resistance junction-to-case for the IGBT is 0.43 °C/W, and for the diode, it is 0.78 °C/W.
- What are the typical applications of the NGTB25N120FL3WG IGBT?
The typical applications include solar inverters, uninterruptible power inverter supplies (UPS), and welding.
- Does the NGTB25N120FL3WG IGBT come with a co-packaged diode?
Yes, it comes with a soft and fast co-packaged free-wheeling diode.
- What is the maximum junction temperature of the NGTB25N120FL3WG IGBT?
The maximum junction temperature (TJmax) is 175°C.
- Is the NGTB25N120FL3WG IGBT Pb-free?
Yes, the NGTB25N120FL3WG IGBT is Pb-free.
- What is the collector-emitter saturation voltage (VCEsat) of the NGTB25N120FL3WG IGBT?
The collector-emitter saturation voltage (VCEsat) is typically 1.7 V at 25 A and 15 V gate-emitter voltage.
- What are the turn-on and turn-off delay times of the NGTB25N120FL3WG IGBT?
The turn-on delay time (td(on)) is approximately 15 ns, and the turn-off delay time (td(off)) is approximately 109 ns at 25°C.
- What is the forward voltage of the co-packaged diode?
The forward voltage (VF) of the diode is typically 2.8 V at 25 A and 175°C junction temperature.
