Overview
The NRVBD1035VCTLT4G is a Schottky power rectifier produced by onsemi, designed for high-frequency switching applications. This component employs the Schottky Barrier principle in a large area metal-to-silicon power diode, making it ideal for low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. The device is part of the SBRD81035CTL series and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 35 | V |
| Working Peak Reverse Voltage | VRWM | 35 | V |
| DC Blocking Voltage | VR | 35 | V |
| Average Rectified Forward Current (TC = 115°C) | IO | 5.0 (Per Leg), 10 (Per Package) | A |
| Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 115°C) | IFRM | 10 | A |
| Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) | IFSM | 50 | A |
| Storage / Operating Case Temperature | Tstg, Tc | −55 to +150 | °C |
| Operating Junction Temperature | TJ | −55 to +150 | °C |
| Voltage Rate of Change (Rated VR, TJ = 25°C) | dv/dt | 10,000 | V/μs |
| Thermal Resistance, Junction-to-Case (Per Leg) | RJC | 3.0 | °C/W |
| Thermal Resistance, Junction-to-Ambient (Per Leg) | RJA | 137 | °C/W |
Key Features
- Highly Stable Oxide Passivated Junction
- Guardring for Stress Protection
- Matched Dual Die Construction − May be Paralleled for High Current Output
- High dv/dt Capability
- Short Heat Sink Tap Manufactured − Not Sheared
- Very Low Forward Voltage Drop
- Epoxy Meets UL 94 V−0 @ 0.125 in
- Pb−Free, Halogen Free/BFR Free and RoHS Compliant
- AEC−Q101 Qualified and PPAP Capable for automotive and other specific applications
Applications
The NRVBD1035VCTLT4G is ideally suited for various high-frequency applications, including:
- Switching power supplies
- Free wheeling diodes
- Polarity protection diodes
- Automotive applications requiring unique site and control change requirements
Q & A
- What is the peak repetitive reverse voltage of the NRVBD1035VCTLT4G?
The peak repetitive reverse voltage is 35 V. - What is the average rectified forward current for this device?
The average rectified forward current is 5.0 A per leg and 10 A per package at TC = 115°C. - What is the maximum instantaneous forward voltage at 10 A and 25°C?
The maximum instantaneous forward voltage is 0.47 V at 10 A and 25°C. - Is the NRVBD1035VCTLT4G RoHS compliant?
Yes, the device is Pb−Free, Halogen Free/BFR Free and RoHS compliant. - What is the thermal resistance from junction to ambient for this device?
The thermal resistance from junction to ambient is 137 °C/W. - What are the storage and operating case temperatures for this device?
The storage and operating case temperatures range from −55 to +150 °C. - Is the NRVBD1035VCTLT4G suitable for automotive applications?
Yes, it is AEC−Q101 qualified and PPAP capable, making it suitable for automotive and other specific applications. - What is the voltage rate of change for this device?
The voltage rate of change is 10,000 V/μs at rated VR and TJ = 25°C. - What is the non-repetitive peak surge current for this device?
The non-repetitive peak surge current is 50 A. - What is the epoxy material classification for this device?
The epoxy meets UL 94 V−0 @ 0.125 in.
