FCMT125N65S3
  • Share:

onsemi FCMT125N65S3

Manufacturer No:
FCMT125N65S3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 24A 4PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCMT125N65S3 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family. This MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and offer higher avalanche energy. The device is packaged in the ultra-slim Power88 package, which is a surface-mount package with a low profile and small footprint, making it ideal for various high-power applications.

Key Specifications

ParameterValue
Channel PolarityN-Channel
Drain-Source Voltage (VDSS)650 V
Drain Current (ID)24 A
On-Resistance (RDS(on)) at VGS = 10 V125 mΩ
Gate-Source Voltage (VGS)±30 V
Threshold Voltage (VGS(th))4.5 V
Gate Charge (Qg) at VGS = 10 V49 nC
Effective Output Capacitance (Coss(eff.))406 pF
Internal Gate Resistance0.5 Ω
Package TypePower88 (PQFN-4)
Moisture Sensitivity LevelMSL 1

Key Features

  • Leadless ultra-thin SMD package (Power88)
  • Kelvin contact for improved switching performance
  • Ultra-low gate charge (Typ. Qg = 49 nC)
  • Low effective output capacitance (Typ. Coss(eff.) = 406 pF)
  • Optimized capacitance
  • 100% avalanche tested
  • RoHS compliant
  • Moisture Sensitivity Level 1 guarantee

Applications

  • Telecommunication systems
  • Cloud and server power systems
  • Industrial applications
  • LED lighting
  • Adapter and power supply units
  • Solar inverter applications

Q & A

  1. What is the FCMT125N65S3 MOSFET? The FCMT125N65S3 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family.
  2. What is the drain-source voltage rating of the FCMT125N65S3? The drain-source voltage rating is 650 V.
  3. What is the maximum drain current of the FCMT125N65S3? The maximum drain current is 24 A.
  4. What is the on-resistance of the FCMT125N65S3 at VGS = 10 V? The on-resistance is 125 mΩ.
  5. What package type is used for the FCMT125N65S3? The FCMT125N65S3 is packaged in the Power88 (PQFN-4) package.
  6. What are the key features of the FCMT125N65S3? Key features include ultra-low gate charge, low effective output capacitance, Kelvin contact, and 100% avalanche testing.
  7. What are the typical applications of the FCMT125N65S3? Typical applications include telecommunication systems, cloud and server power, industrial applications, LED lighting, and solar inverter applications.
  8. Is the FCMT125N65S3 RoHS compliant? Yes, the FCMT125N65S3 is RoHS compliant.
  9. What is the moisture sensitivity level of the FCMT125N65S3? The moisture sensitivity level is MSL 1.
  10. What is the internal gate resistance of the FCMT125N65S3? The internal gate resistance is 0.5 Ω.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4.5V @ 590µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1920 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):181W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-PQFN (8x8)
Package / Case:4-PowerTSFN
0 Remaining View Similar

In Stock

$3.74
168

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP