FCMT125N65S3
  • Share:

onsemi FCMT125N65S3

Manufacturer No:
FCMT125N65S3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 24A 4PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCMT125N65S3 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family. This MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and offer higher avalanche energy. The device is packaged in the ultra-slim Power88 package, which is a surface-mount package with a low profile and small footprint, making it ideal for various high-power applications.

Key Specifications

ParameterValue
Channel PolarityN-Channel
Drain-Source Voltage (VDSS)650 V
Drain Current (ID)24 A
On-Resistance (RDS(on)) at VGS = 10 V125 mΩ
Gate-Source Voltage (VGS)±30 V
Threshold Voltage (VGS(th))4.5 V
Gate Charge (Qg) at VGS = 10 V49 nC
Effective Output Capacitance (Coss(eff.))406 pF
Internal Gate Resistance0.5 Ω
Package TypePower88 (PQFN-4)
Moisture Sensitivity LevelMSL 1

Key Features

  • Leadless ultra-thin SMD package (Power88)
  • Kelvin contact for improved switching performance
  • Ultra-low gate charge (Typ. Qg = 49 nC)
  • Low effective output capacitance (Typ. Coss(eff.) = 406 pF)
  • Optimized capacitance
  • 100% avalanche tested
  • RoHS compliant
  • Moisture Sensitivity Level 1 guarantee

Applications

  • Telecommunication systems
  • Cloud and server power systems
  • Industrial applications
  • LED lighting
  • Adapter and power supply units
  • Solar inverter applications

Q & A

  1. What is the FCMT125N65S3 MOSFET? The FCMT125N65S3 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family.
  2. What is the drain-source voltage rating of the FCMT125N65S3? The drain-source voltage rating is 650 V.
  3. What is the maximum drain current of the FCMT125N65S3? The maximum drain current is 24 A.
  4. What is the on-resistance of the FCMT125N65S3 at VGS = 10 V? The on-resistance is 125 mΩ.
  5. What package type is used for the FCMT125N65S3? The FCMT125N65S3 is packaged in the Power88 (PQFN-4) package.
  6. What are the key features of the FCMT125N65S3? Key features include ultra-low gate charge, low effective output capacitance, Kelvin contact, and 100% avalanche testing.
  7. What are the typical applications of the FCMT125N65S3? Typical applications include telecommunication systems, cloud and server power, industrial applications, LED lighting, and solar inverter applications.
  8. Is the FCMT125N65S3 RoHS compliant? Yes, the FCMT125N65S3 is RoHS compliant.
  9. What is the moisture sensitivity level of the FCMT125N65S3? The moisture sensitivity level is MSL 1.
  10. What is the internal gate resistance of the FCMT125N65S3? The internal gate resistance is 0.5 Ω.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4.5V @ 590µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1920 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):181W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-PQFN (8x8)
Package / Case:4-PowerTSFN
0 Remaining View Similar

In Stock

$3.74
168

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3