FCMT125N65S3
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onsemi FCMT125N65S3

Manufacturer No:
FCMT125N65S3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 24A 4PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCMT125N65S3 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family. This MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and offer higher avalanche energy. The device is packaged in the ultra-slim Power88 package, which is a surface-mount package with a low profile and small footprint, making it ideal for various high-power applications.

Key Specifications

ParameterValue
Channel PolarityN-Channel
Drain-Source Voltage (VDSS)650 V
Drain Current (ID)24 A
On-Resistance (RDS(on)) at VGS = 10 V125 mΩ
Gate-Source Voltage (VGS)±30 V
Threshold Voltage (VGS(th))4.5 V
Gate Charge (Qg) at VGS = 10 V49 nC
Effective Output Capacitance (Coss(eff.))406 pF
Internal Gate Resistance0.5 Ω
Package TypePower88 (PQFN-4)
Moisture Sensitivity LevelMSL 1

Key Features

  • Leadless ultra-thin SMD package (Power88)
  • Kelvin contact for improved switching performance
  • Ultra-low gate charge (Typ. Qg = 49 nC)
  • Low effective output capacitance (Typ. Coss(eff.) = 406 pF)
  • Optimized capacitance
  • 100% avalanche tested
  • RoHS compliant
  • Moisture Sensitivity Level 1 guarantee

Applications

  • Telecommunication systems
  • Cloud and server power systems
  • Industrial applications
  • LED lighting
  • Adapter and power supply units
  • Solar inverter applications

Q & A

  1. What is the FCMT125N65S3 MOSFET? The FCMT125N65S3 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family.
  2. What is the drain-source voltage rating of the FCMT125N65S3? The drain-source voltage rating is 650 V.
  3. What is the maximum drain current of the FCMT125N65S3? The maximum drain current is 24 A.
  4. What is the on-resistance of the FCMT125N65S3 at VGS = 10 V? The on-resistance is 125 mΩ.
  5. What package type is used for the FCMT125N65S3? The FCMT125N65S3 is packaged in the Power88 (PQFN-4) package.
  6. What are the key features of the FCMT125N65S3? Key features include ultra-low gate charge, low effective output capacitance, Kelvin contact, and 100% avalanche testing.
  7. What are the typical applications of the FCMT125N65S3? Typical applications include telecommunication systems, cloud and server power, industrial applications, LED lighting, and solar inverter applications.
  8. Is the FCMT125N65S3 RoHS compliant? Yes, the FCMT125N65S3 is RoHS compliant.
  9. What is the moisture sensitivity level of the FCMT125N65S3? The moisture sensitivity level is MSL 1.
  10. What is the internal gate resistance of the FCMT125N65S3? The internal gate resistance is 0.5 Ω.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4.5V @ 590µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1920 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):181W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-PQFN (8x8)
Package / Case:4-PowerTSFN
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$3.74
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