Overview
The FDBL86361-F085 is a high-performance N-Channel MOSFET from onsemi, designed for demanding applications requiring high current handling and low on-resistance. This device is part of the POWERTRENCH family, known for its advanced trench technology that enhances power efficiency and reliability. With a typical RDS(on) of 1.1 mΩ at VGS = 10 V and ID = 80 A, this MOSFET is ideal for applications where high power density and minimal energy loss are critical.
Key Specifications
| Symbol | Parameter | Ratings | Unit |
|---|---|---|---|
| VDSS | Drain-to-Source Voltage | 80 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Drain Current - Continuous | 300 | A |
| PD | Power Dissipation | 429 | W |
| TJ, TSTG | Operating and Storage Temperature | -55 to +175 | °C |
| RθJC | Thermal Resistance, Junction to Case | 0.35 | °C/W |
| RθJA | Maximum Thermal Resistance, Junction to Ambient | 43 | °C/W |
| RDS(on) | Drain to Source on Resistance | 1.1 mΩ (Typical at VGS = 10 V, ID = 80 A) | mΩ |
| Qg(tot) | Total Gate Charge at 10 V | 172 nC (Typical at VGS = 0 to 10 V, VDD = 64 V) | nC |
Key Features
- Typical RDS(on) = 1.1 mΩ at VGS = 10 V, ID = 80 A, ensuring low on-resistance and high efficiency.
- UIS Capability for robust operation in inductive switching applications.
- AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive applications.
- Pb-Free and RoHS Compliant, adhering to environmental standards.
- High continuous drain current of 300 A and high pulsed drain current capability.
- Low gate charge (Qg) and fast switching times for high-frequency applications.
Applications
- Automotive Engine Control: Ideal for high-power engine management systems.
- PowerTrain Management: Suitable for transmission and drivetrain control.
- Solenoid and Motor Drivers: Used in various motor control and solenoid driver applications.
- Integrated Starter/Alternator: For advanced starter/alternator systems in vehicles.
- Primary Switch for 12 V Systems: Can be used as a primary switch in 12 V automotive systems.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the FDBL86361-F085?
The maximum drain-to-source voltage (VDSS) is 80 V.
- What is the typical on-resistance (RDS(on)) of this MOSFET?
The typical on-resistance (RDS(on)) is 1.1 mΩ at VGS = 10 V and ID = 80 A.
- Is the FDBL86361-F085 AEC-Q101 Qualified?
- What are the operating and storage temperature ranges for this MOSFET?
The operating and storage temperature ranges are -55°C to +175°C.
- What is the maximum continuous drain current (ID) of this device?
The maximum continuous drain current (ID) is 300 A.
- Is the FDBL86361-F085 Pb-Free and RoHS Compliant?
- What are some typical applications for the FDBL86361-F085?
Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator, and primary switch for 12 V systems.
- What is the thermal resistance from junction to case (RθJC) for this MOSFET?
The thermal resistance from junction to case (RθJC) is 0.35°C/W.
- What is the maximum thermal resistance from junction to ambient (RθJA) for this device?
The maximum thermal resistance from junction to ambient (RθJA) is 43°C/W.
- What is the total gate charge (Qg(tot)) at VGS = 10 V for this MOSFET?
The total gate charge (Qg(tot)) at VGS = 10 V is typically 172 nC.
