FDBL86561-F085
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onsemi FDBL86561-F085

Manufacturer No:
FDBL86561-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL86561-F085 is a high-performance N-Channel MOSFET from onsemi, designed for demanding power management applications. This device is part of the POWERTRENCH family, known for its advanced trench technology that enhances power efficiency and reliability. With a drain-to-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 300 A, this MOSFET is suitable for a wide range of power-intensive applications.

Key Specifications

Parameter Value Unit
VDSS - Drain-to-Source Voltage 60 V
ID - Continuous Drain Current 300 A
RDS(on) - Static Drain to Source On Resistance 1.1 mΩ at VGS = 10 V, ID = 80 A
VGS - Gate-to-Source Voltage ±20 V
PD - Power Dissipation 300 W W
TJ, TSTG - Operating and Storage Temperature -55 to +175 °C °C
RθJC - Thermal Resistance, Junction to Case Not specified °C/W

Key Features

  • Low On-Resistance: Typical RDS(on) of 0.85 mΩ at VGS = 10 V, ID = 80 A, ensuring minimal power loss.
  • High Current Capability: Continuous drain current of 300 A, making it suitable for high-power applications.
  • Robust Avalanche Capability: Designed to handle high-energy pulses, enhancing reliability in demanding environments.
  • Environmental Compliance: Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • Advanced Trench Technology: Part of the POWERTRENCH family, offering improved power efficiency and thermal performance.

Applications

  • Automotive Systems: Suitable for engine control, powertrain management, solenoid and motor drivers, and electrical power steering.
  • Distributed Power Architectures: Ideal for voltage regulator modules (VRMs) and primary switches in 12 V systems.
  • Industrial Power Management: Used in various industrial power management systems requiring high current and low on-resistance.
  • Integrated Starter/Alternator Systems: Applicable in hybrid and electric vehicle systems.

Q & A

  1. What is the maximum drain-to-source voltage of the FDBL86561-F085 MOSFET?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current (ID) is 300 A.

  3. What is the typical on-resistance of the FDBL86561-F085 at VGS = 10 V and ID = 80 A?

    The typical on-resistance (RDS(on)) is 0.85 mΩ.

  4. Is the FDBL86561-F085 environmentally compliant?

    Yes, it is Pb-free, halogen-free, and RoHS compliant.

  5. What are some common applications for the FDBL86561-F085 MOSFET?

    Common applications include automotive systems, distributed power architectures, industrial power management, and integrated starter/alternator systems.

  6. What is the operating temperature range for the FDBL86561-F085?

    The operating and storage temperature range is -55 to +175 °C.

  7. Does the FDBL86561-F085 have any special handling requirements?

    Yes, it should be handled according to standard semiconductor handling practices to avoid damage.

  8. Is the FDBL86561-F085 suitable for high-energy pulse applications?

    Yes, it is designed to handle high-energy pulses and has robust avalanche capability.

  9. What is the power dissipation rating of the FDBL86561-F085?

    The power dissipation (PD) is 300 W.

  10. Does the FDBL86561-F085 come in a specific package type?

    The specific package details are not provided in the given sources, but it is typically available in standard power MOSFET packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13650 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):429W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
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Similar Products

Part Number FDBL86561-F085 FDBL86566-F085 FDBL86563-F085 FDBL86361-F085
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 240A (Tc) 240A (Tc) 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 80A, 10V 2.4mOhm @ 80A, 10V 1.5mOhm @ 80A, 10V 1.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V 110 nC @ 10 V 169 nC @ 10 V 188 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13650 pF @ 30 V 6655 pF @ 30 V 10300 pF @ 30 V 12800 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 429W (Tj) 300W (Tj) 357W (Tj) 429W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN 8-PowerSFN

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