FDBL86561-F085
  • Share:

onsemi FDBL86561-F085

Manufacturer No:
FDBL86561-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL86561-F085 is a high-performance N-Channel MOSFET from onsemi, designed for demanding power management applications. This device is part of the POWERTRENCH family, known for its advanced trench technology that enhances power efficiency and reliability. With a drain-to-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 300 A, this MOSFET is suitable for a wide range of power-intensive applications.

Key Specifications

Parameter Value Unit
VDSS - Drain-to-Source Voltage 60 V
ID - Continuous Drain Current 300 A
RDS(on) - Static Drain to Source On Resistance 1.1 mΩ at VGS = 10 V, ID = 80 A
VGS - Gate-to-Source Voltage ±20 V
PD - Power Dissipation 300 W W
TJ, TSTG - Operating and Storage Temperature -55 to +175 °C °C
RθJC - Thermal Resistance, Junction to Case Not specified °C/W

Key Features

  • Low On-Resistance: Typical RDS(on) of 0.85 mΩ at VGS = 10 V, ID = 80 A, ensuring minimal power loss.
  • High Current Capability: Continuous drain current of 300 A, making it suitable for high-power applications.
  • Robust Avalanche Capability: Designed to handle high-energy pulses, enhancing reliability in demanding environments.
  • Environmental Compliance: Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • Advanced Trench Technology: Part of the POWERTRENCH family, offering improved power efficiency and thermal performance.

Applications

  • Automotive Systems: Suitable for engine control, powertrain management, solenoid and motor drivers, and electrical power steering.
  • Distributed Power Architectures: Ideal for voltage regulator modules (VRMs) and primary switches in 12 V systems.
  • Industrial Power Management: Used in various industrial power management systems requiring high current and low on-resistance.
  • Integrated Starter/Alternator Systems: Applicable in hybrid and electric vehicle systems.

Q & A

  1. What is the maximum drain-to-source voltage of the FDBL86561-F085 MOSFET?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current (ID) is 300 A.

  3. What is the typical on-resistance of the FDBL86561-F085 at VGS = 10 V and ID = 80 A?

    The typical on-resistance (RDS(on)) is 0.85 mΩ.

  4. Is the FDBL86561-F085 environmentally compliant?

    Yes, it is Pb-free, halogen-free, and RoHS compliant.

  5. What are some common applications for the FDBL86561-F085 MOSFET?

    Common applications include automotive systems, distributed power architectures, industrial power management, and integrated starter/alternator systems.

  6. What is the operating temperature range for the FDBL86561-F085?

    The operating and storage temperature range is -55 to +175 °C.

  7. Does the FDBL86561-F085 have any special handling requirements?

    Yes, it should be handled according to standard semiconductor handling practices to avoid damage.

  8. Is the FDBL86561-F085 suitable for high-energy pulse applications?

    Yes, it is designed to handle high-energy pulses and has robust avalanche capability.

  9. What is the power dissipation rating of the FDBL86561-F085?

    The power dissipation (PD) is 300 W.

  10. Does the FDBL86561-F085 come in a specific package type?

    The specific package details are not provided in the given sources, but it is typically available in standard power MOSFET packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13650 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):429W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
0 Remaining View Similar

In Stock

$5.64
51

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDBL86561-F085 FDBL86566-F085 FDBL86563-F085 FDBL86361-F085
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 240A (Tc) 240A (Tc) 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 80A, 10V 2.4mOhm @ 80A, 10V 1.5mOhm @ 80A, 10V 1.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V 110 nC @ 10 V 169 nC @ 10 V 188 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13650 pF @ 30 V 6655 pF @ 30 V 10300 pF @ 30 V 12800 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 429W (Tj) 300W (Tj) 357W (Tj) 429W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN 8-PowerSFN

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3