Overview
The onsemi NTMFS6H818NT1G is a high-performance N-channel MOSFET designed for demanding power management applications. This device features an 80V drain-source voltage rating, a continuous drain current of 123A, and a low on-resistance of 3.7mΩ at 10V and 20A. The MOSFET is packaged in a compact DFN-5 (5x6) surface mount package, making it suitable for space-constrained designs. With its enhancement mode operation and single transistor configuration, it offers efficient power handling and control.
Key Specifications
| Attribute | Value |
|---|---|
| Manufacturer | onsemi |
| Part Number | NTMFS6H818NT1G |
| Channel Type | N-Channel |
| Maximum Continuous Drain Current (Id) | 123 A |
| Maximum Drain Source Voltage (Vdss) | 80 V |
| Drain Source On Resistance (RDS(on)) | 3.7 mΩ @ 10 V, 20 A |
| Maximum Power Dissipation (Pd) | 136 W |
| Package Type | DFN-5 (5x6) |
| Mounting Type | Surface Mount |
| Pin Count | 5 |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4 V |
| Minimum Gate Threshold Voltage | 2 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V |
| Forward Diode Voltage | 1.2 V |
Key Features
- High Current Capability: Continuous drain current of 123 A, making it suitable for high-power applications.
- Low On-Resistance: 3.7 mΩ at 10 V and 20 A, reducing power losses and improving efficiency.
- Compact Package: DFN-5 (5x6) surface mount package, ideal for space-constrained designs.
- Enhancement Mode Operation: Single transistor configuration with enhancement mode operation for efficient power handling.
- Wide Operating Temperature Range: From -55 °C to +175 °C, ensuring reliability in various environmental conditions.
- High Gate Threshold Voltage: Maximum gate threshold voltage of 4 V and minimum of 2 V, providing robust gate control.
Applications
- Power Supplies: Suitable for high-power DC-DC converters and power supply units.
- Motor Control: Ideal for motor drive applications due to its high current and low on-resistance.
- Industrial Automation: Used in various industrial automation systems requiring high power and efficiency.
- Renewable Energy Systems: Applicable in solar and wind power systems for efficient power management.
- Automotive Systems: Suitable for automotive applications such as electric vehicles and hybrid vehicles.
Q & A
- What is the maximum continuous drain current of the NTMFS6H818NT1G MOSFET?
The maximum continuous drain current is 123 A.
- What is the maximum drain-source voltage rating of this MOSFET?
The maximum drain-source voltage rating is 80 V.
- What is the on-resistance of the NTMFS6H818NT1G at 10 V and 20 A?
The on-resistance is 3.7 mΩ at 10 V and 20 A.
- What is the package type of the NTMFS6H818NT1G?
The package type is DFN-5 (5x6) surface mount.
- What is the operating temperature range of this MOSFET?
The operating temperature range is from -55 °C to +175 °C.
- What is the maximum gate threshold voltage of the NTMFS6H818NT1G?
The maximum gate threshold voltage is 4 V.
- What is the typical gate charge at 10 V for this MOSFET?
The typical gate charge is 46 nC at 10 V.
- Is the NTMFS6H818NT1G RoHS compliant?
Yes, the NTMFS6H818NT1G is RoHS compliant.
- What are some common applications of the NTMFS6H818NT1G MOSFET?
Common applications include power supplies, motor control, industrial automation, renewable energy systems, and automotive systems.
- What is the forward diode voltage of the NTMFS6H818NT1G?
The forward diode voltage is 1.2 V.
- What is the maximum power dissipation of this MOSFET?
The maximum power dissipation is 136 W.
