STH275N8F7-2AG
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STMicroelectronics STH275N8F7-2AG

Manufacturer No:
STH275N8F7-2AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 180A H2PAK-2
Delivery:
Payment:
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Product Introduction

Overview

The STH275N8F7-2AG is a high-performance N-channel Power MOSFET manufactured by STMicroelectronics. This device utilizes STripFETTM F7 technology, which features an enhanced trench gate structure. This technology results in very low on-state resistance, reduced internal capacitance, and lower gate charge, enabling faster and more efficient switching. The STH275N8F7-2AG is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)80 V
Current Rating (Id)180 A (Tc)
Power Dissipation (Pd)315 W (Tc)
Input Capacitance (Ciss)13.6 nF
Maximum Operating Temperature175 °C
Minimum Operating Temperature-55 °C
Package TypeH2PAK-2 (Surface Mount)

Key Features

  • Low on-state resistance (Rds(on)) for reduced power losses.
  • Enhanced trench gate structure for improved switching performance.
  • Reduced internal capacitance and gate charge for faster switching.
  • AEC-Q101 qualified for automotive applications.
  • High power dissipation capability (315 W at Tc).

Applications

The STH275N8F7-2AG is designed for use in a variety of high-power applications, including:

  • Automotive systems (e.g., electric vehicles, hybrid vehicles).
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management systems.

Q & A

  1. What is the voltage rating of the STH275N8F7-2AG MOSFET?
    The voltage rating (Vds) of the STH275N8F7-2AG is 80 V.
  2. What is the current rating of the STH275N8F7-2AG MOSFET?
    The current rating (Id) of the STH275N8F7-2AG is 180 A at Tc.
  3. What is the maximum power dissipation of the STH275N8F7-2AG?
    The maximum power dissipation (Pd) of the STH275N8F7-2AG is 315 W at Tc.
  4. What is the input capacitance of the STH275N8F7-2AG?
    The input capacitance (Ciss) of the STH275N8F7-2AG is 13.6 nF.
  5. What is the operating temperature range of the STH275N8F7-2AG?
    The operating temperature range of the STH275N8F7-2AG is from -55 °C to 175 °C.
  6. What package type is the STH275N8F7-2AG available in?
    The STH275N8F7-2AG is available in the H2PAK-2 (Surface Mount) package.
  7. Is the STH275N8F7-2AG AEC-Q101 qualified?
    Yes, the STH275N8F7-2AG is AEC-Q101 qualified.
  8. What are some typical applications for the STH275N8F7-2AG?
    The STH275N8F7-2AG is typically used in automotive systems, power supplies, motor control systems, and industrial power management systems.
  9. What technology does the STH275N8F7-2AG utilize?
    The STH275N8F7-2AG utilizes STripFETTM F7 technology.
  10. How does the STripFETTM F7 technology benefit the STH275N8F7-2AG?
    The STripFETTM F7 technology results in very low on-state resistance, reduced internal capacitance, and lower gate charge, enabling faster and more efficient switching.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:193 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13600 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):315W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STH275N8F7-6AG
STH275N8F7-6AG
MOSFET N-CH 80V 180A H2PAK-6

Similar Products

Part Number STH275N8F7-2AG STH275N8F7-6AG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 90A, 10V 2.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 193 nC @ 10 V 193 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 50 V 13600 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 315W (Tc) 315W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package H2Pak-2 H2PAK-6
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab)

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