Overview
The STH275N8F7-6AG is an automotive-grade N-channel Power MOSFET produced by STMicroelectronics. This device utilizes the advanced STripFET™ F7 technology, featuring an enhanced trench gate structure that results in very low on-state resistance and reduced internal capacitance and gate charge. This design enables faster and more efficient switching, making it ideal for high-performance applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 80 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 180 | A |
| Pulsed Drain Current (IDM) | 720 | A |
| Total Dissipation at TC = 25 °C (PTOT) | 315 | W |
| Single Pulse Avalanche Energy (EAS) | 0.775 | J |
| Storage Temperature Range (Tstg) | -55 to 175 | °C |
| Operating Junction Temperature Range (Tj) | -55 to 175 | °C |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 90 A | 1.7 - 2.1 | mΩ |
| Thermal Resistance Junction-Case (Rthj-case) | 0.48 | °C/W |
| Thermal Resistance Junction-PCB (Rthj-pcb) | 35 | °C/W |
Key Features
- AEC-Q101 qualified, ensuring high reliability for automotive applications.
- Among the lowest RDS(on) on the market, enhancing efficiency and reducing power losses.
- Excellent figure of merit (FoM) for improved performance.
- Low Crss/Ciss ratio for enhanced EMI immunity.
- High avalanche ruggedness, providing robustness against transient events.
Applications
The STH275N8F7-6AG is designed for various switching applications, particularly in the automotive sector. It is suitable for use in power management systems, motor control, and other high-current switching applications where efficiency and reliability are critical.
Q & A
- What is the maximum drain-source voltage of the STH275N8F7-6AG? The maximum drain-source voltage is 80 V.
- What is the continuous drain current rating at 25 °C? The continuous drain current rating is 180 A.
- What is the typical on-state resistance of the STH275N8F7-6AG? The typical on-state resistance is 1.7 mΩ at VGS = 10 V and ID = 90 A.
- Is the STH275N8F7-6AG AEC-Q101 qualified? Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the maximum gate-source voltage? The maximum gate-source voltage is ±20 V.
- What is the thermal resistance junction-case? The thermal resistance junction-case is 0.48 °C/W.
- What are the package options for the STH275N8F7-6AG? The device is available in H²PAK-6 packages.
- What is the maximum junction temperature? The maximum junction temperature is 175 °C.
- What is the single pulse avalanche energy rating? The single pulse avalanche energy rating is 0.775 J.
- What are the typical switching times for this MOSFET? The turn-on delay time is typically 56 ns, the rise time is typically 180 ns, the turn-off delay time is typically 98 ns, and the fall time is typically 42 ns.
