NTMFS4834NT1G
  • Share:

onsemi NTMFS4834NT1G

Manufacturer No:
NTMFS4834NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 13A/130A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4834NT1G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed to offer low conduction losses and high efficiency, making it suitable for a variety of power management applications. The MOSFET features a single N-Channel configuration and is packaged in a SO-8FL (DFN) package, which provides excellent thermal performance and a compact footprint.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)130 A
RDS(ON) (On-Resistance)2.65 mΩ (typical at VGS = 10 V)
Typical Turn-On Delay Time11 ns, 20 ns
Typical Turn-Off Delay Time37 ns, 22 ns
Package TypeSO-8FL (DFN)

Key Features

  • Low RDS(ON) to minimize conduction losses
  • Low capacitance to reduce switching losses
  • High current handling capability of up to 130 A
  • Compact SO-8FL (DFN) package for improved thermal performance
  • Fast switching times with typical turn-on and turn-off delay times of 11 ns and 37 ns, respectively

Applications

The NTMFS4834NT1G is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Automotive systems, such as battery management and power steering
  • Industrial power management and control systems
  • Renewable energy systems, such as solar and wind power inverters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTMFS4834NT1G?
    The maximum drain-source voltage is 30 V.
  2. What is the continuous drain current (ID) rating of this MOSFET?
    The continuous drain current rating is 130 A.
  3. What is the typical on-resistance (RDS(ON)) of the NTMFS4834NT1G?
    The typical on-resistance is 2.65 mΩ at VGS = 10 V.
  4. What is the package type of the NTMFS4834NT1G?
    The package type is SO-8FL (DFN).
  5. What are the typical turn-on and turn-off delay times of this MOSFET?
    The typical turn-on delay times are 11 ns and 20 ns, and the typical turn-off delay times are 37 ns and 22 ns.
  6. What are some common applications for the NTMFS4834NT1G?
    Common applications include power supplies, motor control systems, automotive systems, industrial power management, and renewable energy systems.
  7. Why is the low RDS(ON) important in this MOSFET?
    The low RDS(ON) minimizes conduction losses, improving overall efficiency in power management applications.
  8. How does the compact SO-8FL package benefit the performance of the NTMFS4834NT1G?
    The compact SO-8FL package enhances thermal performance and provides a smaller footprint, making it ideal for space-constrained designs.
  9. What are the advantages of low capacitance in this MOSFET?
    Low capacitance reduces switching losses, leading to faster and more efficient switching operations.
  10. Where can I find detailed specifications and datasheets for the NTMFS4834NT1G?
    Detailed specifications and datasheets can be found on the official onsemi website, as well as through distributors like Mouser, Digi-Key, and Farnell.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):900mW (Ta), 86.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

-
70

Please send RFQ , we will respond immediately.

Same Series
NTMFS4834NT3G
NTMFS4834NT3G
MOSFET N-CH 30V 13A/130A 5DFN

Similar Products

Part Number NTMFS4834NT1G NTMFS4835NT1G NTMFS4834NT3G NTMFS4839NT1G NTMFS4836NT1G NTMFS4837NT1G NTMFS4934NT1G NTMFS4833NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 130A (Tc) 13A (Ta), 130A (Tc) 13A (Ta), 130A (Tc) 9.5A (Ta), 64A (Tc) 11A (Ta), 90A (Tc) 10A (Ta), 74A (Tc) 17.1A (Ta), 147A (Tc) 16A (Ta), 156A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 30A, 10V 3.5mOhm @ 30A, 10V 3mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V 2mOhm @ 30A, 10V 2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 4.5 V 52 nC @ 11.5 V 48 nC @ 4.5 V 18 nC @ 4.5 V 28 nC @ 4.5 V 22 nC @ 4.5 V 34 nC @ 4.5 V 88 nC @ 11.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 12 V 3100 pF @ 12 V 4500 pF @ 12 V 1588 pF @ 12 V 2677 pF @ 12 V 2048 pF @ 12 V 5505 pF @ 15 V 5600 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 900mW (Ta), 86.2W (Tc) 890mW (Ta), 62.5W (Tc) 900mW (Ta), 86.2W (Tc) 870mW (Ta), 41.7W (Tc) 890mW (Ta), 55.6W (Tc) 880mW (Ta), 47.2W (Tc) 930mW (Ta), 69.44W (Tc) 910mW (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP