onsemi NTMFS4835NT1G

Manufacturer No:: NTMFS4835NT1G
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 30V 13A/130A 5DFN
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Product Introduction

Overview

The NTMFS4835NT1G is a high-performance N-Channel MOSFET produced by onsemi. This device is designed to offer superior switching characteristics and low on-resistance, making it suitable for a variety of power management applications. The MOSFET is packaged in a SO-8FL (Small Outline 8-lead Flip Chip Leadframe) package, which is lead-free and RoHS compliant.

Key Specifications

Parameter	Value
V_DS (Drain-Source Voltage)	30 V
I_D (Continuous Drain Current)	104 A
R_DS(ON) (On-Resistance)	Typically 1.5 mΩ at V_GS = 10 V, I_D = 50 A
V_GS(TH) (Gate Threshold Voltage)	Typically 2.5 V
C_iss (Input Capacitance)	3100 pF at V_DS = 12 V
T_J (Junction Temperature)	-55°C to 150°C
Package	SO-8FL (Small Outline 8-lead Flip Chip Leadframe)

Key Features

High current capability with low on-resistance, enhancing efficiency in power switching applications.
Low input capacitance and fast switching times, ideal for high-frequency operations.
Wide operating temperature range (-55°C to 150°C), making it suitable for diverse environmental conditions.
Lead-free and RoHS compliant, ensuring environmental sustainability.
Compact SO-8FL package, optimizing board space and thermal performance.

Applications

Power supplies and DC-DC converters.
Motor control and drive systems.
High-frequency switching circuits.
Automotive and industrial power management systems.
Server and data center power systems.

Q & A

What is the maximum drain-source voltage of the NTMFS4835NT1G?
The maximum drain-source voltage (V_DS) is 30 V.
What is the continuous drain current rating of this MOSFET?
The continuous drain current (I_D) is 104 A.
What is the typical on-resistance of the NTMFS4835NT1G?
The typical on-resistance (R_DS(ON)) is 1.5 mΩ at V_GS = 10 V, I_D = 50 A.
What is the gate threshold voltage of this device?
The gate threshold voltage (V_GS(TH)) is typically 2.5 V.
What is the input capacitance of the NTMFS4835NT1G?
The input capacitance (C_iss) is 3100 pF at V_DS = 12 V.
What is the operating temperature range of this MOSFET?
The operating temperature range is -55°C to 150°C.
What package type is used for the NTMFS4835NT1G?
The package type is SO-8FL (Small Outline 8-lead Flip Chip Leadframe).
Is the NTMFS4835NT1G lead-free and RoHS compliant?
Yes, it is lead-free and RoHS compliant.
What are some common applications for the NTMFS4835NT1G?
Common applications include power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, and automotive and industrial power management systems.
Where can I find detailed specifications for the NTMFS4835NT1G?
Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

In Stock

UnitPrice: $1.27

Quantity: 547

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Same Series

Part Number	NTMFS4835NT1G	NTMFS4935NT1G	NTMFS4835NT3G	NTMFS4839NT1G	NTMFS4836NT1G	NTMFS4837NT1G	NTMFS4845NT1G	NTMFS4833NT1G	NTMFS4834NT1G
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V	30 V	30 V	30 V	30 V	30 V	30 V	30 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 130A (Tc)	13A (Ta), 93A (Tc)	13A (Ta), 130A (Tc)	9.5A (Ta), 64A (Tc)	11A (Ta), 90A (Tc)	10A (Ta), 74A (Tc)	13.7A (Ta), 115A (Tc)	16A (Ta), 156A (Tc)	13A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 11.5V	4.5V, 10V	4.5V, 11.5V	4.5V, 11.5V	4.5V, 11.5V	4.5V, 11.5V	4.5V, 10V	4.5V, 10V	4.5V, 11.5V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 30A, 10V	3.2mOhm @ 30A, 10V	3.5mOhm @ 30A, 10V	5.5mOhm @ 30A, 10V	4mOhm @ 30A, 10V	5mOhm @ 30A, 10V	2.9mOhm @ 30A, 10V	2mOhm @ 30A, 10V	3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	2.2V @ 250µA	2.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 11.5 V	49.4 nC @ 10 V	52 nC @ 11.5 V	18 nC @ 4.5 V	28 nC @ 4.5 V	22 nC @ 4.5 V	62 nC @ 11.5 V	88 nC @ 11.5 V	48 nC @ 4.5 V
Vgs (Max)	±20V	±20V	±20V	±20V	±20V	±20V	±16V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	3100 pF @ 12 V	4850 pF @ 15 V	3100 pF @ 12 V	1588 pF @ 12 V	2677 pF @ 12 V	2048 pF @ 12 V	3720 pF @ 12 V	5600 pF @ 12 V	4500 pF @ 12 V
FET Feature	-	-	-	-	-	-	-	-	-
Power Dissipation (Max)	890mW (Ta), 62.5W (Tc)	930mW (Ta), 48W (Tc)	890mW (Ta), 62.5W (Tc)	870mW (Ta), 41.7W (Tc)	890mW (Ta), 55.6W (Tc)	880mW (Ta), 47.2W (Tc)	890mW (Ta), 62.5W (Tc)	910mW (Ta), 125W (Tc)	900mW (Ta), 86.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	13A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 11.5V
Rds On (Max) @ Id, Vgs:	3.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	52 nC @ 11.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3100 pF @ 12 V
FET Feature:	-
Power Dissipation (Max):	890mW (Ta), 62.5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN, 5 Leads

onsemi NTMFS4835NT1G

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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