Overview
The NTMFS4845NT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. The MOSFET is packaged in a SO-8FL (Pb-Free) package, which is compact and suitable for space-constrained designs.
Key Specifications
Parameter | Value |
---|---|
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 35.5 A |
Rds On - Drain-Source Resistance | 2.9 mOhms |
Vgs - Gate-Source Voltage | ±20 V |
Package Type | SO-8FL (Pb-Free) |
Key Features
- Low Rds(on): Minimizes conduction losses, enhancing overall efficiency in power management applications.
- Low Capacitance: Reduces switching losses and improves high-frequency performance.
- High Continuous Drain Current: Supports high current applications with a continuous drain current of 35.5 A.
- Compact SO-8FL Package: Pb-Free packaging suitable for space-constrained designs and environmentally friendly.
Applications
- Power Management: Ideal for DC-DC converters, power supplies, and other power management systems.
- Switching Applications: Suitable for high-frequency switching in motor control, audio amplifiers, and other high-power switching applications.
- Automotive Systems: Can be used in various automotive power management and control systems due to its robust performance and reliability.
Q & A
- What is the drain-source breakdown voltage of the NTMFS4845NT1G?
The drain-source breakdown voltage (Vds) is 30 V.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current (Id) is 35.5 A.
- What is the on-resistance (Rds On) of the NTMFS4845NT1G?
The on-resistance (Rds On) is 2.9 mOhms.
- What is the package type of the NTMFS4845NT1G?
The package type is SO-8FL (Pb-Free).
- What are some key features of this MOSFET?
Key features include low Rds(on), low capacitance, high continuous drain current, and a compact Pb-Free SO-8FL package.
- In what types of applications is the NTMFS4845NT1G commonly used?
Common applications include power management, high-frequency switching, and automotive systems.
- What is the maximum gate-source voltage for this MOSFET?
The maximum gate-source voltage (Vgs) is ±20 V.
- Why is the low Rds(on) important in this MOSFET?
Low Rds(on) minimizes conduction losses, enhancing overall efficiency in power management applications.
- How does the low capacitance benefit the performance of this MOSFET?
Low capacitance reduces switching losses and improves high-frequency performance.
- Is the NTMFS4845NT1G suitable for high-power applications?
Yes, it is suitable for high-power applications due to its high continuous drain current and low on-resistance.