NTMFS4849NT1G
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onsemi NTMFS4849NT1G

Manufacturer No:
NTMFS4849NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 10.2A/71A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4849NT1G is a high-performance N-Channel MOSFET manufactured by onsemi. This device is designed to control current flow between the source and drain terminals via gate voltage, making it suitable for various power management and switching applications. The MOSFET is packaged in a surface-mount SO-8FL configuration, ensuring compact and efficient integration into electronic systems.

Key Specifications

ParameterValue
Channel TypeN-Channel
Drain-to-Source Voltage (Vdss)30 V
Continuous Drain Current (Id)10.2 A (Ta), 71 A (Tc)
On-Resistance (Rds On)Not specified in provided sources, refer to datasheet for detailed information
Package TypeSO-8FL (Surface Mount)
Power Dissipation870 mW (Ta), 42.4 W (Tc)

Key Features

  • High current handling capability with continuous drain current of 10.2 A at ambient temperature and 71 A at case temperature.
  • Compact SO-8FL surface-mount packaging for efficient board space utilization.
  • Low on-resistance for reduced power losses and improved efficiency.
  • Fast switching capabilities suitable for high-frequency applications.

Applications

  • Power amplifiers and voltage regulators due to its ability to control current flow efficiently.
  • Switching applications in various electronic systems where high current and low on-resistance are required.
  • General-purpose power management in industrial, automotive, and consumer electronics.

Q & A

  1. What is the channel type of the NTMFS4849NT1G MOSFET?
    The NTMFS4849NT1G is an N-Channel MOSFET.
  2. What is the maximum drain-to-source voltage (Vdss) of the NTMFS4849NT1G?
    The maximum drain-to-source voltage is 30 V.
  3. What is the continuous drain current (Id) of the NTMFS4849NT1G?
    The continuous drain current is 10.2 A at ambient temperature and 71 A at case temperature.
  4. What is the package type of the NTMFS4849NT1G?
    The package type is SO-8FL (Surface Mount).
  5. What are the typical applications of the NTMFS4849NT1G?
    Typical applications include power amplifiers, voltage regulators, and general-purpose power management in various electronic systems.
  6. What is the power dissipation capability of the NTMFS4849NT1G?
    The power dissipation is 870 mW at ambient temperature and 42.4 W at case temperature.
  7. Is the NTMFS4849NT1G suitable for high-frequency applications?
    Yes, it is suitable due to its fast switching capabilities.
  8. Where can I find detailed specifications for the NTMFS4849NT1G?
    Detailed specifications can be found in the datasheet available from onsemi’s official website or through distributors like Digi-Key and Mouser.
  9. What is the on-resistance (Rds On) of the NTMFS4849NT1G?
    The on-resistance is not specified in the provided sources; refer to the datasheet for detailed information.
  10. Is the NTMFS4849NT1G lead-free?
    Yes, the NTMFS4849NT1G is available in a lead-free package configuration.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10.2A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:5.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:2040 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):870mW (Ta), 42.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS4849NT1G NTMFS4849NT3G NTMFS4839NT1G NTMFS4841NT1G NTMFS4845NT1G NTMFS4846NT1G NTMFS4847NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10.2A (Ta), 71A (Tc) 10.2A (Ta), 71A (Tc) 9.5A (Ta), 64A (Tc) 8.3A (Ta), 57A (Tc) 13.7A (Ta), 115A (Tc) 12.7A (Ta), 100A (Tc) 11.5A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 30A, 10V 5.1mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V 7mOhm @ 30A, 10V 2.9mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V 4.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 4.5 V 22 nC @ 4.5 V 18 nC @ 4.5 V 17 nC @ 4.5 V 62 nC @ 11.5 V 53 nC @ 11.5 V 28 nC @ 4.5 V
Vgs (Max) ±16V ±16V ±20V ±20V ±16V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 12 V 2040 pF @ 12 V 1588 pF @ 12 V 1436 pF @ 12 V 3720 pF @ 12 V 3250 pF @ 12 V 2614 pF @ 12 V
FET Feature - - - - - - -
Power Dissipation (Max) 870mW (Ta), 42.4W (Tc) 870mW (Ta), 42.4W (Tc) 870mW (Ta), 41.7W (Tc) 870mW (Ta), 41.7W (Tc) 890mW (Ta), 62.5W (Tc) 890mW (Ta), 55.5W (Tc) 880mW (Ta), 48.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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