Overview
The BD682T is a plastic, medium-power PNP Darlington transistor produced by onsemi. This transistor is designed for use as an output device in complementary general-purpose amplifier applications. It is part of a series that includes the BD676, BD678, BD680, and other variants, which are known for their high DC current gain and monolithic construction.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 | Vdc |
| Collector-Base Voltage | VCB | 100 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current | IC | 4.0 | Adc |
| Base Current | IB | 0.1 | Adc |
| Total Device Dissipation @ TC = 25 °C | PD | 40 | W |
| Thermal Resistance, Junction-to-Case | RJC | 3.13 | °C/W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −55 to +150 | °C |
| DC Current Gain (hFE) | hFE | 750 (Min) @ IC = 1.5 and 2.0 Adc | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | 2.5 Vdc @ IC = 1.5 Adc, IB = 30 mAdc |
Key Features
- High DC Current Gain: The BD682T has a minimum DC current gain (hFE) of 750 at collector currents of 1.5 and 2.0 Adc.
- Monolithic Construction: These transistors are built with monolithic construction, enhancing their reliability and performance.
- Complementary Devices: The BD682T is complementary with other devices such as BD675, BD675A, BD677, BD677A, BD679, BD679A, and BD681.
- Equivalence to Other Devices: The BD682T is equivalent to MJE 703, making it a versatile option for various applications.
- Pb-Free Packages: The BD682T is available in Pb-Free packages, ensuring RoHS compliance.
Applications
The BD682T is suitable for use in a variety of applications, including:
- General-purpose amplifier applications.
- Output devices in complementary amplifier circuits.
- Power switching and control circuits.
- Automotive and industrial control systems.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BD682T?
The maximum collector-emitter voltage (VCEO) of the BD682T is 100 Vdc.
- What is the maximum collector current (IC) of the BD682T?
The maximum collector current (IC) of the BD682T is 4.0 Adc.
- What is the thermal resistance, junction-to-case (RJC) of the BD682T?
The thermal resistance, junction-to-case (RJC) of the BD682T is 3.13 °C/W.
- Is the BD682T Pb-Free and RoHS compliant?
- What is the DC current gain (hFE) of the BD682T?
The minimum DC current gain (hFE) of the BD682T is 750 at collector currents of 1.5 and 2.0 Adc.
- What are the operating and storage junction temperature ranges for the BD682T?
The operating and storage junction temperature ranges for the BD682T are −55 to +150 °C.
- Can the BD682T be used in automotive applications?
- What is the collector-emitter saturation voltage (VCE(sat)) of the BD682T?
The collector-emitter saturation voltage (VCE(sat)) of the BD682T is 2.5 Vdc at IC = 1.5 Adc and IB = 30 mAdc.
- Is the BD682T still in production?
The BD682T is listed as obsolete, and it is not recommended for new designs. However, replacement parts may be available.
- What are the complementary devices to the BD682T?
The BD682T is complementary with devices such as BD675, BD675A, BD677, BD677A, BD679, BD679A, and BD681.
