BD682G
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onsemi BD682G

Manufacturer No:
BD682G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP DARL 100V 4A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD682G is a PNP Darlington transistor manufactured by onsemi. This device is part of the medium-power silicon Darlington transistor family and is known for its high current handling and voltage tolerance. The BD682G is packaged in a TO-126 through-hole configuration, making it suitable for a variety of applications requiring robust switching and amplification capabilities.

Key Specifications

Parameter Value Unit
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 5 V
Collector Current (Continuous) 4 A
Power Dissipation (Total) 40 W
Operating Junction Temperature -55 to 150 °C
Package Type TO-126

Key Features

  • High Current Capability: The BD682G can handle up to 4A of continuous collector current, making it suitable for high-current applications.
  • High Voltage Tolerance: With a collector-base and collector-emitter voltage rating of 100V, this transistor is robust against voltage spikes and surges.
  • Medium Power Dissipation: The device can dissipate up to 40W of power, ensuring reliable operation in medium-power applications.
  • Through-Hole Packaging: The TO-126 package is easy to integrate into existing designs and provides good thermal management.

Applications

  • Power Switching: The BD682G is often used in power switching circuits where high current and voltage handling are required.
  • Amplifier Circuits: Its Darlington configuration makes it suitable for amplifier applications needing high current gain.
  • Motor Control: It can be used in motor control circuits due to its ability to handle high currents and voltages.
  • Industrial Automation: The transistor is used in various industrial automation applications requiring reliable and robust switching and amplification.

Q & A

  1. What is the maximum collector current of the BD682G?

    The maximum continuous collector current of the BD682G is 4A.

  2. What is the collector-emitter voltage rating of the BD682G?

    The collector-emitter voltage rating of the BD682G is 100V.

  3. What type of package does the BD682G use?

    The BD682G is packaged in a TO-126 through-hole configuration.

  4. What is the power dissipation capability of the BD682G?

    The BD682G can dissipate up to 40W of power.

  5. What are some common applications of the BD682G?

    The BD682G is commonly used in power switching, amplifier circuits, motor control, and industrial automation.

  6. What is the operating junction temperature range of the BD682G?

    The operating junction temperature range of the BD682G is -55°C to 150°C.

  7. Is the BD682G a PNP or NPN transistor?

    The BD682G is a PNP Darlington transistor.

  8. What is the emitter-base voltage rating of the BD682G?

    The emitter-base voltage rating of the BD682G is 5V.

  9. Where can I find detailed specifications for the BD682G?

    Detailed specifications for the BD682G can be found in the datasheet available on the onsemi website, as well as on distributor websites like Mouser, Digi-Key, and TME.eu.

  10. Is the BD682G suitable for high-voltage applications?

    Yes, the BD682G is suitable for high-voltage applications due to its 100V collector-base and collector-emitter voltage ratings.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Similar Products

Part Number BD682G BD682S BD682T BD682TG BD680G BD681G BD682
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete Obsolete Active Active
Transistor Type PNP - Darlington PNP - Darlington PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 80 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V
Power - Max 40 W 14 W 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - - - -
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126-3 TO-126 TO-126 TO-126 TO-126 SOT-32-3

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