SMMBT2222ALT3G
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onsemi SMMBT2222ALT3G

Manufacturer No:
SMMBT2222ALT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The SMMBT2222ALT3G is a general-purpose NPN silicon transistor produced by onsemi. This device is part of the MMBT2222 family and is designed for a wide range of applications, including automotive and other sectors requiring high reliability and compliance with stringent standards. The transistor is packaged in a SOT-23 (TO-236) case, which is Pb-free, halogen-free, and RoHS compliant. It is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 75 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current - Continuous IC 600 mAdc
Collector Current - Peak ICM 1100 mAdc
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RJA 556 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
DC Current Gain (IC = 10 mAdc, VCE = 10 Vdc) hFE 75 -
Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VCE(sat) 0.3 Vdc
Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VBE(sat) 0.6 Vdc

Key Features

  • Pb-free, halogen-free, and RoHS compliant packaging.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • High collector-emitter voltage (VCEO) of up to 40 Vdc.
  • High collector-base voltage (VCBO) of up to 75 Vdc.
  • Continuous collector current (IC) of up to 600 mAdc.
  • Peak collector current (ICM) of up to 1100 mAdc.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
  • High DC current gain (hFE) of up to 75.
  • Small-signal characteristics include a current-gain bandwidth product (fT) of up to 300 MHz.

Applications

The SMMBT2222ALT3G transistor is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification and PPAP capability, it is suitable for use in automotive electronics.
  • General-purpose switching and amplification: Its high current gain and low saturation voltages make it ideal for switching and amplification circuits.
  • Industrial control systems: It can be used in industrial control circuits where reliability and high performance are required.
  • Consumer electronics: Suitable for use in various consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the SMMBT2222ALT3G transistor?

    The maximum collector-emitter voltage (VCEO) is 40 Vdc.

  2. Is the SMMBT2222ALT3G transistor RoHS compliant?

    Yes, the transistor is Pb-free, halogen-free, and RoHS compliant.

  3. What is the continuous collector current (IC) rating of the SMMBT2222ALT3G?

    The continuous collector current (IC) is up to 600 mAdc.

  4. What is the peak collector current (ICM) of the SMMBT2222ALT3G?

    The peak collector current (ICM) is up to 1100 mAdc.

  5. What is the DC current gain (hFE) of the SMMBT2222ALT3G transistor?

    The DC current gain (hFE) is up to 75 at IC = 10 mAdc and VCE = 10 Vdc.

  6. What is the thermal resistance, junction-to-ambient (RJA), for the SMMBT2222ALT3G on an FR-5 board?

    The thermal resistance, junction-to-ambient (RJA), is 556 °C/W on an FR-5 board.

  7. Is the SMMBT2222ALT3G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  8. What is the collector-emitter saturation voltage (VCE(sat)) of the SMMBT2222ALT3G?

    The collector-emitter saturation voltage (VCE(sat)) is 0.3 Vdc at IC = 150 mAdc and IB = 15 mAdc.

  9. What is the base-emitter saturation voltage (VBE(sat)) of the SMMBT2222ALT3G?

    The base-emitter saturation voltage (VBE(sat)) is 0.6 Vdc at IC = 150 mAdc and IB = 15 mAdc.

  10. What is the current-gain bandwidth product (fT) of the SMMBT2222ALT3G transistor?

    The current-gain bandwidth product (fT) is up to 300 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:300 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
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SMMBT2222ALT1G
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Similar Products

Part Number SMMBT2222ALT3G SMMBT2222ALT1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 300 mW 225 mW
Frequency - Transition 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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