Overview
The SMMBT2222ALT3G is a general-purpose NPN silicon transistor produced by onsemi. This device is part of the MMBT2222 family and is designed for a wide range of applications, including automotive and other sectors requiring high reliability and compliance with stringent standards. The transistor is packaged in a SOT-23 (TO-236) case, which is Pb-free, halogen-free, and RoHS compliant. It is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 40 | Vdc |
Collector-Base Voltage | VCBO | 75 | Vdc |
Emitter-Base Voltage | VEBO | 6.0 | Vdc |
Collector Current - Continuous | IC | 600 | mAdc |
Collector Current - Peak | ICM | 1100 | mAdc |
Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
DC Current Gain (IC = 10 mAdc, VCE = 10 Vdc) | hFE | 75 | - |
Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VCE(sat) | 0.3 | Vdc |
Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VBE(sat) | 0.6 | Vdc |
Key Features
- Pb-free, halogen-free, and RoHS compliant packaging.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- High collector-emitter voltage (VCEO) of up to 40 Vdc.
- High collector-base voltage (VCBO) of up to 75 Vdc.
- Continuous collector current (IC) of up to 600 mAdc.
- Peak collector current (ICM) of up to 1100 mAdc.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High DC current gain (hFE) of up to 75.
- Small-signal characteristics include a current-gain bandwidth product (fT) of up to 300 MHz.
Applications
The SMMBT2222ALT3G transistor is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification and PPAP capability, it is suitable for use in automotive electronics.
- General-purpose switching and amplification: Its high current gain and low saturation voltages make it ideal for switching and amplification circuits.
- Industrial control systems: It can be used in industrial control circuits where reliability and high performance are required.
- Consumer electronics: Suitable for use in various consumer electronic devices requiring reliable and efficient transistor performance.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the SMMBT2222ALT3G transistor?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- Is the SMMBT2222ALT3G transistor RoHS compliant?
Yes, the transistor is Pb-free, halogen-free, and RoHS compliant.
- What is the continuous collector current (IC) rating of the SMMBT2222ALT3G?
The continuous collector current (IC) is up to 600 mAdc.
- What is the peak collector current (ICM) of the SMMBT2222ALT3G?
The peak collector current (ICM) is up to 1100 mAdc.
- What is the DC current gain (hFE) of the SMMBT2222ALT3G transistor?
The DC current gain (hFE) is up to 75 at IC = 10 mAdc and VCE = 10 Vdc.
- What is the thermal resistance, junction-to-ambient (RJA), for the SMMBT2222ALT3G on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA), is 556 °C/W on an FR-5 board.
- Is the SMMBT2222ALT3G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the collector-emitter saturation voltage (VCE(sat)) of the SMMBT2222ALT3G?
The collector-emitter saturation voltage (VCE(sat)) is 0.3 Vdc at IC = 150 mAdc and IB = 15 mAdc.
- What is the base-emitter saturation voltage (VBE(sat)) of the SMMBT2222ALT3G?
The base-emitter saturation voltage (VBE(sat)) is 0.6 Vdc at IC = 150 mAdc and IB = 15 mAdc.
- What is the current-gain bandwidth product (fT) of the SMMBT2222ALT3G transistor?
The current-gain bandwidth product (fT) is up to 300 MHz.