SMMBTA92LT1G
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onsemi SMMBTA92LT1G

Manufacturer No:
SMMBTA92LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 300V 0.5A SOT23-3
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The SMMBTA92LT1G is a high-voltage PNP bipolar junction transistor (BJT) manufactured by onsemi. This device is part of the MMBTA92L and SMMBTA92L series, which are designed for high-voltage applications. The SMMBTA92LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality and reliability standards. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO300Vdc
Collector-Base VoltageVCBO300Vdc
Emitter-Base VoltageVEBO5.0Vdc
Continuous Collector CurrentIC500mAdc
Total Device Dissipation (FR-5 Board, TA = 25°C)PD225mW
Thermal Resistance, Junction to Ambient (FR-5 Board)RJA556°C/W
Junction and Storage TemperatureTJ, Tstg-55 to +150°C
DC Current Gain (IC = -1.0 mA, VCE = -10 V)hFE25-40
Collector-Emitter Saturation Voltage (IC = -20 mA, IB = -2.0 mA)VCE(sat)0.5Vdc
Base-Emitter Saturation Voltage (IC = -20 mA, IB = -2.0 mA)VBE(sat)0.9Vdc
Current-Gain Bandwidth Product (IC = -10 mA, VCE = -20 V, f = 100 MHz)fT50MHz

Key Features

  • AEC-Q101 qualified and PPAP capable, ensuring high reliability for automotive and other critical applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.
  • High collector-emitter voltage (VCEO) of 300 V and high collector-base voltage (VCBO) of 300 V, suitable for high-voltage applications.
  • Continuous collector current of 500 mA.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
  • Compact SOT-23-3 package, ideal for space-constrained designs.

Applications

The SMMBTA92LT1G is versatile and can be used in a variety of high-voltage applications, including:

  • Automotive systems: Suitable for use in automotive electronics due to its AEC-Q101 qualification.
  • Power supplies: Can be used in high-voltage power supply circuits.
  • Industrial control systems: Applicable in industrial control and automation systems requiring high reliability.
  • Audio and signal amplification: Useful in audio amplifiers and other signal amplification circuits where high voltage handling is necessary.

Q & A

  1. What is the maximum collector-emitter voltage of the SMMBTA92LT1G?
    The maximum collector-emitter voltage (VCEO) is 300 Vdc.
  2. Is the SMMBTA92LT1G RoHS compliant?
    Yes, the SMMBTA92LT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  3. What is the continuous collector current rating of the SMMBTA92LT1G?
    The continuous collector current (IC) is 500 mA.
  4. What is the thermal resistance, junction to ambient, for the SMMBTA92LT1G on an FR-5 board?
    The thermal resistance, junction to ambient (RJA), is 556 °C/W on an FR-5 board.
  5. What is the DC current gain (hFE) of the SMMBTA92LT1G?
    The DC current gain (hFE) ranges from 25 to 40 at IC = -1.0 mA and VCE = -10 V.
  6. What is the collector-emitter saturation voltage (VCE(sat)) of the SMMBTA92LT1G?
    The collector-emitter saturation voltage (VCE(sat)) is approximately 0.5 Vdc at IC = -20 mA and IB = -2.0 mA.
  7. What is the base-emitter saturation voltage (VBE(sat)) of the SMMBTA92LT1G?
    The base-emitter saturation voltage (VBE(sat)) is approximately 0.9 Vdc at IC = -20 mA and IB = -2.0 mA.
  8. What is the current-gain bandwidth product (fT) of the SMMBTA92LT1G?
    The current-gain bandwidth product (fT) is 50 MHz at IC = -10 mA, VCE = -20 V, and f = 100 MHz.
  9. In what package is the SMMBTA92LT1G available?
    The SMMBTA92LT1G is available in a SOT-23-3 package.
  10. Is the SMMBTA92LT1G suitable for automotive applications?
    Yes, the SMMBTA92LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 2mA, 20mA
Current - Collector Cutoff (Max):250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 30mA, 10V
Power - Max:300 mW
Frequency - Transition:50MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number SMMBTA92LT1G SMMBTA92LT3G SMMBTA42LT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type PNP PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 250nA (ICBO) 250nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA, 10V 25 @ 30mA, 10V 40 @ 30mA, 10V
Power - Max 300 mW 300 mW 225 mW
Frequency - Transition 50MHz 50MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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