MMBTA92LT3G
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onsemi MMBTA92LT3G

Manufacturer No:
MMBTA92LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 300V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTA92LT3G is a High Voltage PNP Bipolar Transistor manufactured by onsemi. This device is designed for general purpose amplifier applications and is housed in the SOT-23 package, which is suitable for low power surface mount applications. The transistor is Pb-Free, halogen-free, and RoHS compliant, making it environmentally friendly. It also meets automotive and other stringent application requirements, being AEC-Q101 qualified and PPAP capable.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 300 Vdc
Collector-Base Voltage VCBO 300 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current - Continuous IC 500 mAdc
Collector-Emitter Saturation Voltage VCE(sat) 0.5 Vdc
Base-Emitter Saturation Voltage VBE(sat) 0.9 Vdc
DC Current Gain hFE 25 - 40
Current-Gain Bandwidth Product fT 50 MHz
Total Device Dissipation (FR-5 Board) PD 225 mW
Thermal Resistance, Junction to Ambient RJA 556 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C

Key Features

  • Pb-Free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.
  • High voltage capability with VCEO and VCBO of 300 Vdc.
  • Low collector-emitter saturation voltage (VCE(sat)) of 0.5 Vdc, enhancing efficiency in amplifier applications.
  • Compact SOT-23 package for low power surface mount applications.
  • High current gain (hFE) ranging from 25 to 40, ensuring reliable performance.

Applications

  • General purpose amplifier applications.
  • Automotive electronics due to its AEC-Q101 qualification and PPAP capability.
  • Low power surface mount applications where compact packaging is essential.
  • Various industrial and consumer electronics requiring high voltage and low saturation voltage transistors.

Q & A

  1. What is the MMBTA92LT3G transistor used for?

    The MMBTA92LT3G is used for general purpose amplifier applications and is suitable for automotive and other stringent environments due to its AEC-Q101 qualification and PPAP capability.

  2. What is the maximum collector-emitter voltage (VCEO) of the MMBTA92LT3G?

    The maximum collector-emitter voltage (VCEO) is 300 Vdc.

  3. What is the collector current rating of the MMBTA92LT3G?

    The continuous collector current rating is 500 mA.

  4. Is the MMBTA92LT3G Pb-Free and RoHS compliant?

    Yes, the MMBTA92LT3G is Pb-Free, halogen-free, and RoHS compliant.

  5. What is the package type of the MMBTA92LT3G?

    The MMBTA92LT3G is housed in the SOT-23 package.

  6. What is the thermal resistance, junction to ambient (RJA) of the MMBTA92LT3G?

    The thermal resistance, junction to ambient (RJA), is 556 °C/W.

  7. What is the current gain (hFE) range of the MMBTA92LT3G?

    The DC current gain (hFE) ranges from 25 to 40.

  8. What is the collector-emitter saturation voltage (VCE(sat)) of the MMBTA92LT3G?

    The collector-emitter saturation voltage (VCE(sat)) is 0.5 Vdc.

  9. What is the base-emitter saturation voltage (VBE(sat)) of the MMBTA92LT3G?

    The base-emitter saturation voltage (VBE(sat)) is 0.9 Vdc.

  10. What is the junction and storage temperature range of the MMBTA92LT3G?

    The junction and storage temperature range is -55 to +150 °C.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 2mA, 20mA
Current - Collector Cutoff (Max):250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 30mA, 10V
Power - Max:300 mW
Frequency - Transition:50MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
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SMMBTA92LT3G
SMMBTA92LT3G
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Similar Products

Part Number MMBTA92LT3G MMBTA42LT3G MMBTA92LT1G MMBTA92LT3
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type PNP NPN PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 300 V 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 250nA (ICBO) 100nA (ICBO) 250nA (ICBO) 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA, 10V 40 @ 30mA, 10V 25 @ 30mA, 10V 25 @ 30mA, 10V
Power - Max 300 mW 225 mW 300 mW 300 mW
Frequency - Transition 50MHz 50MHz 50MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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