MMBT100
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onsemi MMBT100

Manufacturer No:
MMBT100
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT100 is an NPN general-purpose amplifier transistor produced by onsemi. This device is designed for a wide range of general-purpose amplifier applications, particularly at collector currents up to 300 mA. It is sourced from Process 10 and is available in the SOT-23 (TO-236) package, which is Pb-free, halide-free, and RoHS compliant.

The MMBT100 is suitable for various circuit applications due to its robust electrical and thermal characteristics, making it a versatile component in electronic design.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 45 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6.0 V
Collector Current - Continuous (IC) 500 mA
Junction and Storage Temperature (TJ, Tstg) -55 to +150 °C
Total Device Dissipation (PD) 350 mW
Thermal Resistance, Junction to Ambient (RθJA) 357 °C/W
DC Current Gain (hFE) 100 - 450 -
Collector-Emitter Saturation Voltage (VCE(sat)) 0.2 - 0.4 V
Base-Emitter Saturation Voltage (VBE(sat)) 0.85 - 1.0 V
Current Gain Bandwidth Product (fT) 250 MHz

Key Features

  • Pb-free, Halide-free, and RoHS Compliant: Ensures environmental compliance and safety.
  • General Purpose Amplifier: Suitable for a wide range of amplifier applications.
  • High Collector Current: Supports up to 500 mA continuous collector current.
  • High Voltage Ratings: Collector-Emitter Voltage up to 45 V and Collector-Base Voltage up to 75 V.
  • Low Saturation Voltage: Collector-Emitter Saturation Voltage as low as 0.2 V.
  • Compact Package: Available in the SOT-23 (TO-236) package, ideal for surface mount applications.
  • Wide Operating Temperature Range: Junction and storage temperature range from -55°C to +150°C.

Applications

  • General Purpose Amplification: Suitable for various amplifier circuits in consumer electronics, industrial control systems, and automotive applications.
  • Switching Circuits: Can be used in switching applications due to its low saturation voltage and high current gain.
  • Audio Amplifiers: Applicable in audio amplifier circuits requiring low noise and high fidelity.
  • Power Supplies: Used in power supply circuits for voltage regulation and current amplification.
  • Automotive Electronics: Suitable for use in automotive systems due to its robust thermal and electrical characteristics.

Q & A

  1. What is the maximum collector current of the MMBT100 transistor?

    The maximum continuous collector current is 500 mA.

  2. What is the collector-emitter voltage rating of the MMBT100?

    The collector-emitter voltage (VCEO) is rated at 45 V.

  3. What package type is the MMBT100 available in?

    The MMBT100 is available in the SOT-23 (TO-236) package.

  4. Is the MMBT100 RoHS compliant?
  5. What is the thermal resistance, junction to ambient, of the MMBT100?

    The thermal resistance, junction to ambient (RθJA), is 357 °C/W.

  6. What is the typical current gain (hFE) of the MMBT100?

    The typical DC current gain (hFE) ranges from 100 to 450.

  7. What are the typical collector-emitter saturation voltage (VCE(sat)) values for the MMBT100?

    The collector-emitter saturation voltage (VCE(sat)) is typically between 0.2 V and 0.4 V.

  8. What is the current gain-bandwidth product (fT) of the MMBT100?

    The current gain-bandwidth product (fT) is 250 MHz.

  9. What are the operating temperature limits for the MMBT100?

    The junction and storage temperature range is from -55°C to +150°C.

  10. Can the MMBT100 be used in life support systems or medical devices?

    No, the MMBT100 is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 20mA, 200mA
Current - Collector Cutoff (Max):50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 5V
Power - Max:350 mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number MMBT100 MMBT100A MMBT200
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200mA 400mV @ 20mA, 200mA 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max) 50nA 50nA 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 5V 300 @ 10mA, 1V 100 @ 150mA, 5V
Power - Max 350 mW 350 mW 350 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3

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