FDG6306P
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onsemi FDG6306P

Manufacturer No:
FDG6306P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 600MA SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDG6306P is a P-Channel MOSFET from onsemi, designed using the advanced PowerTrench process. This device is optimized for power management applications and features a rugged gate structure. It supports a wide range of gate drive voltages from 2.5 V to 12 V, making it versatile for various power management needs.

Key Specifications

Parameter Test Conditions Min Typ Max Unit
VDSS (Drain-Source Voltage) - - - -20 V
VGSS (Gate-Source Voltage) - - - ±12 V
ID (Drain Current) - Continuous - - - -0.6 A
ID (Drain Current) - Pulsed - - - -2.0 A
PD (Power Dissipation) - - - 0.3 W
TJ, TSTG (Operating and Storage Junction Temperature Range) - -55 - 150 °C
RDS(ON) (Static Drain-Source On-Resistance) at VGS = -4.5 V, ID = -0.6 A - - 420 -
RDS(ON) (Static Drain-Source On-Resistance) at VGS = -2.5 V, ID = -0.5 A - - 630 -
VGS(th) (Gate Threshold Voltage) VDS = VGS, ID = -250 μA -0.6 -1.2 -1.5 V
Ciss (Input Capacitance) VDS = -10 V, VGS = 0 V, f = 1.0 MHz - - 114 pF
Coss (Output Capacitance) - - - 24 pF
Crss (Reverse Transfer Capacitance) - - - 9 pF

Key Features

  • High Performance Trench Technology for Extremely Low RDS(ON)
  • Low Gate Charge
  • Compact Industry Standard SC70-6 Surface Mount Package
  • Pb-Free and RoHS Compliant
  • Rugged Gate Structure
  • Wide Range of Gate Drive Voltage (2.5 V - 12 V)

Applications

  • Battery Management
  • Load Switch

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDG6306P MOSFET?

    The maximum drain-source voltage (VDSS) is -20 V.

  2. What is the gate-source voltage (VGSS) range for the FDG6306P?

    The gate-source voltage (VGSS) range is ±12 V.

  3. What is the continuous drain current (ID) rating for the FDG6306P?

    The continuous drain current (ID) rating is -0.6 A.

  4. What is the power dissipation (PD) rating for the FDG6306P?

    The power dissipation (PD) rating is 0.3 W.

  5. What is the operating and storage junction temperature range for the FDG6306P?

    The operating and storage junction temperature range is -55°C to 150°C.

  6. What is the static drain-source on-resistance (RDS(ON)) at VGS = -4.5 V and ID = -0.6 A?

    The static drain-source on-resistance (RDS(ON)) is 420 mΩ.

  7. Is the FDG6306P Pb-Free and RoHS Compliant?
  8. What are the typical applications for the FDG6306P MOSFET?

    The typical applications include battery management and load switch.

  9. What is the package type for the FDG6306P?

    The package type is SC-88/SC70-6/SOT-363.

  10. What is the thermal resistance (RJA) for the FDG6306P when mounted on a minimum pad?

    The thermal resistance (RJA) is 415°C/W when mounted on a minimum pad.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:600mA
Rds On (Max) @ Id, Vgs:420mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:114pF @ 10V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
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Similar Products

Part Number FDG6306P FDG6316P FDG6308P FDC6306P FDG6302P FDG6304P
Manufacturer onsemi onsemi onsemi onsemi Fairchild Semiconductor onsemi
Product Status Active Active Active Active Obsolete Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 12V 20V 20V 25V 25V
Current - Continuous Drain (Id) @ 25°C 600mA 700mA 600mA 1.9A 140mA 410mA
Rds On (Max) @ Id, Vgs 420mOhm @ 600mA, 4.5V 270mOhm @ 700mA, 4.5V 400mOhm @ 600mA, 4.5V 170mOhm @ 1.9A, 4.5V 10Ohm @ 140mA, 4.5V 1.1Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V 2.4nC @ 4.5V 2.5nC @ 4.5V 4.2nC @ 4.5V 0.31nC @ 4.5V 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 114pF @ 10V 146pF @ 6V 153pF @ 10V 441pF @ 10V 12pF @ 10V 62pF @ 10V
Power - Max 300mW 300mW 300mW 700mW 300mW 300mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 SOT-23-6 Thin, TSOT-23-6 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88 (SC-70-6) SC-88 (SC-70-6) SC-88 (SC-70-6) SuperSOT™-6 SC-88 (SC-70-6) SC-88 (SC-70-6)

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