Overview
The FDG6306P is a P-Channel MOSFET from onsemi, designed using the advanced PowerTrench process. This device is optimized for power management applications and features a rugged gate structure. It supports a wide range of gate drive voltages from 2.5 V to 12 V, making it versatile for various power management needs.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDSS (Drain-Source Voltage) | - | - | - | -20 | V |
| VGSS (Gate-Source Voltage) | - | - | - | ±12 | V |
| ID (Drain Current) - Continuous | - | - | - | -0.6 | A |
| ID (Drain Current) - Pulsed | - | - | - | -2.0 | A |
| PD (Power Dissipation) | - | - | - | 0.3 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | -55 | - | 150 | °C |
| RDS(ON) (Static Drain-Source On-Resistance) at VGS = -4.5 V, ID = -0.6 A | - | - | 420 | - | mΩ |
| RDS(ON) (Static Drain-Source On-Resistance) at VGS = -2.5 V, ID = -0.5 A | - | - | 630 | - | mΩ |
| VGS(th) (Gate Threshold Voltage) | VDS = VGS, ID = -250 μA | -0.6 | -1.2 | -1.5 | V |
| Ciss (Input Capacitance) | VDS = -10 V, VGS = 0 V, f = 1.0 MHz | - | - | 114 | pF |
| Coss (Output Capacitance) | - | - | - | 24 | pF |
| Crss (Reverse Transfer Capacitance) | - | - | - | 9 | pF |
Key Features
- High Performance Trench Technology for Extremely Low RDS(ON)
- Low Gate Charge
- Compact Industry Standard SC70-6 Surface Mount Package
- Pb-Free and RoHS Compliant
- Rugged Gate Structure
- Wide Range of Gate Drive Voltage (2.5 V - 12 V)
Applications
- Battery Management
- Load Switch
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDG6306P MOSFET?
The maximum drain-source voltage (VDSS) is -20 V.
- What is the gate-source voltage (VGSS) range for the FDG6306P?
The gate-source voltage (VGSS) range is ±12 V.
- What is the continuous drain current (ID) rating for the FDG6306P?
The continuous drain current (ID) rating is -0.6 A.
- What is the power dissipation (PD) rating for the FDG6306P?
The power dissipation (PD) rating is 0.3 W.
- What is the operating and storage junction temperature range for the FDG6306P?
The operating and storage junction temperature range is -55°C to 150°C.
- What is the static drain-source on-resistance (RDS(ON)) at VGS = -4.5 V and ID = -0.6 A?
The static drain-source on-resistance (RDS(ON)) is 420 mΩ.
- Is the FDG6306P Pb-Free and RoHS Compliant?
- What are the typical applications for the FDG6306P MOSFET?
The typical applications include battery management and load switch.
- What is the package type for the FDG6306P?
The package type is SC-88/SC70-6/SOT-363.
- What is the thermal resistance (RJA) for the FDG6306P when mounted on a minimum pad?
The thermal resistance (RJA) is 415°C/W when mounted on a minimum pad.
