Overview
The FDMC8200 is a dual N-Channel MOSFET device produced by onsemi, designed for high-efficiency power management. It features two specialized MOSFETs, Q1 and Q2, packaged in a compact Power33 (3 mm x 3 mm MLP) package. This configuration is optimized for synchronous buck converters, with the switch node internally connected to simplify placement and routing. The device is Pb-free, halide-free, and RoHS compliant, making it suitable for a variety of applications requiring high power efficiency and reliability.
Key Specifications
| Parameter | Q1 | Q2 | Unit |
|---|---|---|---|
| Drain to Source Voltage (VDS) | 30 | 30 | V |
| Gate to Source Voltage (VGS) | ±20 | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 18 (Package Limited), 23 (Silicon Limited) | 18 (Package Limited), 45 (Silicon Limited) | A |
| Power Dissipation (PD) at TA = 25°C | 1.9 (Note 1a), 2.2 (Note 1b) | 0.7 (Note 1c), 0.9 (Note 1d) | W |
| Operating and Storage Junction Temperature Range | -55 to +150 | -55 to +150 | °C |
| Thermal Resistance, Junction to Ambient (RθJA) | 65 (Note 1a), 55 (Note 1b) | 180 (Note 1c), 145 (Note 1d) | °C/W |
| On-Resistance (rDS(on)) at VGS = 10 V, ID = 6 A | 20 mΩ | 9.5 mΩ | mΩ |
| On-Resistance (rDS(on)) at VGS = 4.5 V, ID = 5 A | 32 mΩ | 13.5 mΩ | mΩ |
Key Features
- Dual N-Channel MOSFETs in a single Power33 (3 mm x 3 mm MLP) package.
- Internally connected switch node for easy placement and routing in synchronous buck converters.
- Optimized for high power efficiency with low on-resistance (rDS(on)).
- Pb-free, halide-free, and RoHS compliant.
- High continuous drain current capability: up to 18 A for Q1 and 18 A for Q2 at TC = 25°C.
- Wide operating and storage junction temperature range: -55°C to +150°C.
Applications
- Mobile Computing
- Mobile Internet Devices
- General Purpose Point of Load
Q & A
- What is the package type of the FDMC8200?
The FDMC8200 is packaged in a Power33 (3 mm x 3 mm MLP) package.
- What are the maximum drain to source voltages for Q1 and Q2?
The maximum drain to source voltage (VDS) for both Q1 and Q2 is 30 V.
- What are the typical on-resistances for Q1 and Q2 at VGS = 10 V?
The typical on-resistance (rDS(on)) for Q1 is 20 mΩ at VGS = 10 V, ID = 6 A, and for Q2 is 9.5 mΩ at VGS = 10 V, ID = 9 A.
- What is the thermal resistance, junction to ambient (RθJA), for the device?
The thermal resistance, junction to ambient (RθJA), varies depending on the mounting conditions but is typically around 65°C/W for Q1 and 180°C/W for Q2 under specific conditions.
- Is the FDMC8200 RoHS compliant?
- What are the typical applications for the FDMC8200?
The FDMC8200 is typically used in mobile computing, mobile internet devices, and general purpose point of load applications.
- What is the maximum continuous drain current for Q1 and Q2 at TC = 25°C?
The maximum continuous drain current for Q1 is 18 A (package limited) and for Q2 is also 18 A (package limited) at TC = 25°C.
- What is the operating and storage junction temperature range for the FDMC8200?
The operating and storage junction temperature range is -55°C to +150°C.
- How is the switch node configured in the FDMC8200?
The switch node is internally connected to facilitate easy placement and routing in synchronous buck converters.
- What are the key electrical characteristics of the FDMC8200?
The key electrical characteristics include low on-resistance, high continuous drain current, and specific thermal resistance values depending on the mounting conditions.
