BUK7K6R8-40E,115
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Nexperia USA Inc. BUK7K6R8-40E,115

Manufacturer No:
BUK7K6R8-40E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 40A LFPAK56D
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BUK7K6R8-40E,115 is a dual standard level N-channel MOSFET produced by Nexperia USA Inc. This component is housed in an LFPAK56D (Dual Power-SO8) package and utilizes TrenchMOS technology. It is designed and qualified to AEC Q101 standards, ensuring reliability and performance in various applications. The MOSFET is characterized by its high current handling and low on-resistance, making it suitable for a wide range of electronic designs.

Key Specifications

ParameterValue
ManufacturerNexperia USA Inc.
Part NumberBUK7K6R8-40E,115
PackageSOT1205, 8-LFPAK56
Drain to Source Voltage (Vdss)40 V
Continuous Drain Current (Id) @ 25°C40 A
On-Resistance (Rds On) @ Vgs = 10 V6.8 mΩ
Maximum Junction Temperature (Tj)175 °C
Maximum Power Dissipation (Ptot)64 W
Gate to Source Threshold Voltage (Vgs(th))3 V
Input Capacitance (Ciss)1460 pF
Output Capacitance (Coss)324 pF

Key Features

  • Dual standard level N-channel MOSFET in LFPAK56D package.
  • High current handling of up to 40 A.
  • Low on-resistance of 6.8 mΩ at Vgs = 10 V.
  • Maximum drain to source voltage of 40 V.
  • AEC Q101 qualified for automotive and industrial applications.
  • RoHS compliant.
  • High power dissipation capability of up to 64 W.

Applications

The BUK7K6R8-40E,115 MOSFET is versatile and can be used in a variety of applications across different industries, including:

  • Automotive systems: For power management and control in vehicles.
  • Industrial power systems: For motor control, power supplies, and other high-power applications.
  • Consumer electronics: For power management in devices such as laptops, smartphones, and other portable electronics.
  • Power computing: For server and data center power management.
  • Wearables and mobile devices: For efficient power handling in compact designs.

Q & A

  1. What is the maximum drain to source voltage of the BUK7K6R8-40E,115 MOSFET?
    The maximum drain to source voltage is 40 V.
  2. What is the continuous drain current rating of this MOSFET at 25°C?
    The continuous drain current rating is 40 A.
  3. What is the on-resistance of the BUK7K6R8-40E,115 at Vgs = 10 V?
    The on-resistance is 6.8 mΩ.
  4. Is the BUK7K6R8-40E,115 RoHS compliant?
    Yes, it is RoHS compliant.
  5. What is the maximum junction temperature for this MOSFET?
    The maximum junction temperature is 175 °C.
  6. What is the maximum power dissipation capability of the BUK7K6R8-40E,115?
    The maximum power dissipation is 64 W.
  7. What package type is used for the BUK7K6R8-40E,115?
    The package type is SOT1205, 8-LFPAK56.
  8. Is the BUK7K6R8-40E,115 qualified for automotive applications?
    Yes, it is AEC Q101 qualified.
  9. What is the gate to source threshold voltage of this MOSFET?
    The gate to source threshold voltage is typically 3 V.
  10. Where can I find more detailed information and datasheets for the BUK7K6R8-40E,115?
    You can find detailed information and datasheets on the official Nexperia website or through authorized distributors like Mouser, Digi-Key, and others.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:40A
Rds On (Max) @ Id, Vgs:6.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:28.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1947pF @ 25V
Power - Max:64W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-1205, 8-LFPAK56
Supplier Device Package:LFPAK56D
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